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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SIHD6N65E-GE3 DISTI # V99:2348_09218426 | Vishay Intertechnologies | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 2343 |
|
| SIHD6N65E-GE3 DISTI # V36:1790_09218426 | Vishay Intertechnologies | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 0 |
|
| SIHD6N65E-GE3 DISTI # SIHD6N65E-GE3-ND | Vishay Siliconix | MOSFET N-CH 650V 7A TO252 RoHS: Compliant Min Qty: 1 Container: Tube | On Order |
|
| SIHD6N65E-GE3 DISTI # 32316149 | Vishay Intertechnologies | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 3000 |
|
| SIHD6N65E-GE3 DISTI # 25872616 | Vishay Intertechnologies | Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK RoHS: Compliant | 2343 |
|
| SIHD6N65E-GE3 DISTI # SIHD6N65E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 650V 7A 3-Pin TO-252 (Alt: SIHD6N65E-GE3) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| SIHD6N65E-GE3 DISTI # SIHD6N65E-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 650V 7A 3-Pin TO-252 - Tape and Reel (Alt: SIHD6N65E-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SIHD6N65E-GE3 DISTI # 19X1933 | Vishay Intertechnologies | MOSFET Transistor, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes | 3690 |
|
| SIHD6N65E-GE3 | Vishay Intertechnologies | E Series N-Channel 650 V 78 W 0.6 O 48 nC Surface Mount Power Mosfet - DPAK RoHS: Compliant | 3000Tube |
|
| SIHD6N65E-GE3 DISTI # 78-SIHD6N65E-GE3 | Vishay Intertechnologies | MOSFET 650V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | 3132 |
|
| SIHD6N65EGE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | 3000 | |
| SIHD6N65E-GE3 DISTI # 2364075 | Vishay Intertechnologies | MOSFET, N-CH, 650V, 7A, TO-252 RoHS: Compliant | 3690 |
|
| SIHD6N65E-GE3 DISTI # XSFP00000149976 | Vishay Siliconix | ECP2 Series 12 K LUTs 297 I/O 1.26 V SurfaceMountFPGA - FPBGA-484 RoHS: Compliant | 6000 in Stock0 on Order |
|
| SIHD6N65E-GE3 DISTI # 2364075 | Vishay Intertechnologies | MOSFET, N-CH, 650V, 7A, TO-252 | 3800 |
|
| SIHD6N65E-GE3 | Vishay Intertechnologies | MOSFET 650V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant | Americas - |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SIHD6N62E-GE3 OMO.#: OMO-SIHD6N62E-GE3 |
MOSFET 620V Vds 30V Vgs DPAK (TO-252) |
|
|
Mfr.#: SIHD6N65ET1-GE3 OMO.#: OMO-SIHD6N65ET1-GE3 |
MOSFET 650V Vds E Series DPAK TO-252 |
|
|
Mfr.#: SIHD6N65ET4-GE3 OMO.#: OMO-SIHD6N65ET4-GE3 |
MOSFET 650V Vds E Series DPAK TO-252 |
|
|
Mfr.#: SIHD6N65ET5-GE3 OMO.#: OMO-SIHD6N65ET5-GE3 |
MOSFET 650V Vds E Series DPAK TO-252 |
|
Mfr.#: SIHD6N65E-GE3 OMO.#: OMO-SIHD6N65E-GE3-VISHAY |
RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS |
|
|
Mfr.#: SIHD6N62E-GE3 OMO.#: OMO-SIHD6N62E-GE3-VISHAY |
RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS |
|
Mfr.#: SIHD6N62E-GE3-CUT TAPE |
신규 및 오리지널 |
|
Mfr.#: SIHD6N65ET1-GE3 OMO.#: OMO-SIHD6N65ET1-GE3-VISHAY |
MOSFET N-CH 650V 7A TO252AA |
|
|
Mfr.#: SIHD6N65ET4-GE3 OMO.#: OMO-SIHD6N65ET4-GE3-VISHAY |
MOSFET N-CH 650V 7A TO252AA |
|
|
Mfr.#: SIHD6N80E-GE3 OMO.#: OMO-SIHD6N80E-GE3-VISHAY |
MOSFET N-CHAN 800V TO-252 |