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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI9435BDY-T1-E3 DISTI # SI9435BDY-T1-E3CT-ND | Vishay Siliconix | MOSFET P-CH 30V 4.1A 8-SOIC Min Qty: 1 Container: Cut Tape (CT) | 28764In Stock |
|
| SI9435BDY-T1-E3 DISTI # 781-SI9435BDY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 5.7A 0.042Ohm RoHS: Compliant | 10984 |
|
| SI9435BDY-T1-E3 | Vishay Intertechnologies | MOSFET 30V 5.7A 0.042Ohm | Americas - 25000 |
|
| SI9435BDY-T1-E3CT-ND | Vishay Intertechnologies | 100 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI9435BDY-T1-E3-CUT TAPE |
신규 및 오리지널 |
|
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Mfr.#: SI9435BDY OMO.#: OMO-SI9435BDY-1190 |
4100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
|
|
Mfr.#: SI9435BDY-E3 OMO.#: OMO-SI9435BDY-E3-1190 |
Transistor: P-MOSFET, unipolar, -30V, -4.6A, 2.5W, SO8 |
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Mfr.#: SI9435BDY-T1 OMO.#: OMO-SI9435BDY-T1-1190 |
MOSFET 30V 5.7A 2.5W |
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Mfr.#: SI9435BDY-T1-E3 , IMP811 |
신규 및 오리지널 |
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Mfr.#: SI9435BDY-T1-E3 GE3 OMO.#: OMO-SI9435BDY-T1-E3-GE3-1190 |
신규 및 오리지널 |
|
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Mfr.#: SI9435BDY-T1-E3(9435B) |
신규 및 오리지널 |
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|
Mfr.#: SI9435BDY-T1-E3. OMO.#: OMO-SI9435BDY-T1-E3--1190 |
MOSFET 30V 5.7A 0.042Ohm |
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|
Mfr.#: SI9435BDY-TI-E3 OMO.#: OMO-SI9435BDY-TI-E3-1190 |
신규 및 오리지널 |
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Mfr.#: SI9435BDYT1E3 OMO.#: OMO-SI9435BDYT1E3-1190 |
Small Signal Field-Effect Transistor, 4.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |