IPN60R360P7SATMA1

IPN60R360P7SATMA1
Mfr. #:
IPN60R360P7SATMA1
제조사:
Infineon Technologies
설명:
MOSFET CONSUMER
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPN60R360P7SATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPN60R360P7SATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PG-SOT-223-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
9 A
Rds On - 드레인 소스 저항:
300 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
13 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
7 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
시리즈:
CoolMOS P7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
10 ns
상품 유형:
MOSFET
상승 시간:
7 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
42 ns
일반적인 켜기 지연 시간:
8 ns
부품 번호 별칭:
IPN60R360P7S SP001681928
Tags
IPN60R36, IPN60R3, IPN60, IPN6, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 360 mOhm 13 nC CoolMOS™ Power Mosfet - SOT-223
***i-Key
MOSFET N-CHANNEL 600V 9A SOT223
***ical
Trans MOSFET N-CH 600V 9A T/R
***ronik
N-CH 600V 9A 300mOhm SOT-223
***ark
Mosfet, N-Ch, 600V, 9A, 7W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.3Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 9A, 7W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:7W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 9A, 7W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:9A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.3ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:7W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPN60R360P7SATMA1
DISTI # 33259294
Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R3000
  • 3000:$0.4257
IPN60R360P7SATMA1
DISTI # IPN60R360P7SATMA1CT-ND
Infineon Technologies AGMOSFET N-CHANNEL 600V 9A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2875In Stock
  • 1000:$0.4416
  • 500:$0.5593
  • 100:$0.6771
  • 10:$0.8680
  • 1:$0.9700
IPN60R360P7SATMA1
DISTI # IPN60R360P7SATMA1DKR-ND
Infineon Technologies AGMOSFET N-CHANNEL 600V 9A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2875In Stock
  • 1000:$0.4416
  • 500:$0.5593
  • 100:$0.6771
  • 10:$0.8680
  • 1:$0.9700
IPN60R360P7SATMA1
DISTI # IPN60R360P7SATMA1TR-ND
Infineon Technologies AGMOSFET N-CHANNEL 600V 9A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 6000:$0.3811
  • 3000:$0.4001
IPN60R360P7SATMA1
DISTI # V36:1790_18204912
Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R0
    IPN60R360P7SATMA1
    DISTI # IPN60R360P7SATMA1
    Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPN60R360P7SATMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 30000:$0.3449
    • 18000:$0.3519
    • 12000:$0.3639
    • 6000:$0.3779
    • 3000:$0.3919
    IPN60R360P7SATMA1
    DISTI # 93AC7118
    Infineon Technologies AGMOSFET, N-CH, 600V, 9A, 7W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes3000
    • 1000:$0.4130
    • 500:$0.5230
    • 250:$0.5580
    • 100:$0.5920
    • 50:$0.6510
    • 25:$0.7110
    • 10:$0.7710
    • 1:$0.8990
    IPN60R360P7SATMA1
    DISTI # 726-IPN60R360P7SATMA
    Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant
    4778
    • 1:$0.8900
    • 10:$0.7630
    • 100:$0.5860
    • 500:$0.5180
    • 1000:$0.4090
    • 3000:$0.3630
    • 9000:$0.3490
    IPN60R360P7SATMA1
    DISTI # 2986470
    Infineon Technologies AGMOSFET, N-CH, 600V, 9A, 7W, SOT-223
    RoHS: Compliant
    3000
    • 1000:$0.5450
    • 500:$0.6280
    • 250:$0.6840
    • 100:$0.7380
    • 25:$1.0600
    • 5:$1.1700
    IPN60R360P7SATMA1
    DISTI # 2986470
    Infineon Technologies AGMOSFET, N-CH, 600V, 9A, 7W, SOT-2233000
    • 500:£0.3790
    • 250:£0.4040
    • 100:£0.4290
    • 25:£0.5620
    • 5:£0.6260
    영상 부분 # 설명
    MAX9144EUD+

    Mfr.#: MAX9144EUD+

    OMO.#: OMO-MAX9144EUD-

    Analog Comparators 40ns Low-Power 3V/5V Comparator
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    Mfr.#: BAS21J,115

    OMO.#: OMO-BAS21J-115

    Diodes - General Purpose, Power, Switching SNGL SWITCHING DIODE
    IPD60R180P7SAUMA1

    Mfr.#: IPD60R180P7SAUMA1

    OMO.#: OMO-IPD60R180P7SAUMA1

    MOSFET CONSUMER
    MURA160T3G

    Mfr.#: MURA160T3G

    OMO.#: OMO-MURA160T3G

    Rectifiers 600V 1A UltraFast
    STL3N65M2

    Mfr.#: STL3N65M2

    OMO.#: OMO-STL3N65M2

    MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package
    CBC3225T101MR

    Mfr.#: CBC3225T101MR

    OMO.#: OMO-CBC3225T101MR

    Fixed Inductors 1210 100uH 1820mOhms +/-20% 270mA
    TSOP77338TR

    Mfr.#: TSOP77338TR

    OMO.#: OMO-TSOP77338TR

    Infrared Receivers Heimdall 38kHz AGC3
    PEC11R-4330F-S0012

    Mfr.#: PEC11R-4330F-S0012

    OMO.#: OMO-PEC11R-4330F-S0012

    Encoders ENCODER
    MAX9144EUD+

    Mfr.#: MAX9144EUD+

    OMO.#: OMO-MAX9144EUD--MAXIM-INTEGRATED

    Analog Comparators 40ns Low-Power 3V/5V Comparato
    PEC11R-4330F-S0012

    Mfr.#: PEC11R-4330F-S0012

    OMO.#: OMO-PEC11R-4330F-S0012-BOURNS

    Encoders ENCODER
    유효성
    재고:
    Available
    주문 시:
    1987
    수량 입력:
    IPN60R360P7SATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.89
    US$0.89
    10
    US$0.76
    US$7.63
    100
    US$0.59
    US$58.60
    500
    US$0.52
    US$259.00
    1000
    US$0.41
    US$409.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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