 |  | |
| PartNumber | IPN60R3K4CEATMA1 | IPN60R360P7SATMA1 |
| Description | MOSFET CONSUMER | MOSFET CONSUMER |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-4 | PG-SOT-223-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 2.6 A | 9 A |
| Rds On Drain Source Resistance | 7.96 Ohms | 300 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 4.6 nC | 13 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 5 W | 7 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Height | 1.6 mm | - |
| Length | 6.5 mm | - |
| Series | CoolMOS CE | CoolMOS P7 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 3.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 60 ns | 10 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10 ns | 7 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 40 ns | 42 ns |
| Typical Turn On Delay Time | 8 ns | 8 ns |
| Part # Aliases | IPN60R3K4CE SP001434888 | IPN60R360P7S SP001681928 |
| Unit Weight | 0.003951 oz | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPN60R3K4CEATMA1 | MOSFET CONSUMER | |
| IPN60R360P7SATMA1 | MOSFET CONSUMER | ||
| IPN60R360P7SATMA1 | MOSFET N-CHANNEL 600V 9A SOT223 | ||
| IPN60R3K4CEATMA1 | MOSFET NCH 600V 2.6A SOT223 | ||
| IPN60R360P7SATMA1-CUT TAPE | 신규 및 오리지널 | ||
| IPN60R360P7S | 신규 및 오리지널 | ||
| IPN60R3K4CE | Trans MOSFET N-CH 650V 2.6A 3-Pin SOT-223 T/R (Alt: IPN60R3K4CE) |