OMO ElectronicOMO Electronic
Expand menu
안녕하세요, 로그인내 계정
0 카트

FDMS0309AS

FDMS0309AS
Mfr. #:
FDMS0309AS
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET PT8 NCH 30/20V S PQF
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FDMS0309AS 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
Power-56-8
채널 수:
2 Channel
트랜지스터 극성:
N-채널
구성:
듀얼
상표명:
PowerTrench SyncFET
포장:
릴
키:
1.1 mm
길이:
6 mm
시리즈:
FDMS0309AS
트랜지스터 유형:
2 N-channel
너비:
5 mm
상표:
온세미컨덕터 / 페어차일드
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
단위 무게:
0.002402 oz
Tags
FDMS0309A, FDMS0309, FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDMS0309AS Series 30 V 49 A 3.5 mOhm N-Channel Power Trench SyncFET - POWER-56
*** Stop Electro
Power Field-Effect Transistor, 21A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0309AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***roFlash
Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6
***ical
Trans MOSFET N-CH 30V 27A 8-Pin QFN EP T/R
***Yang
Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***emi
N-Channel PowerTrench® SyncFET™ 30V, 49A, 2.8mΩ
***r Electronics
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS8025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***ical
Trans MOSFET N-CH Si 30V 24A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0308AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 6 mOhm 15 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
***et
Trans MOSFET N-CH 30V 21A 8-Pin PQFN EP T/R
***nell
MOSFET,N CH,DIODE,30V,21A,PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.003ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.7W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Current Id Max:21A; Voltage Vgs Max:20V
***ineon
Benefits: RoHS Compliant; Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
***ure Electronics
Single N-Channel 30 V 4.5 mOhm 13 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 63A, TDSON-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 30W; Transistor Case Style: TDSON; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
***ow.cn
Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
***rchild Semiconductor
The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***nell
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
부분 # 제조 설명 재고 가격
FDMS0309AS
DISTI # FDMS0309ASCT-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5898In Stock
  • 1000:$0.2859
  • 500:$0.3573
  • 100:$0.4824
  • 10:$0.6250
  • 1:$0.7100
FDMS0309AS
DISTI # FDMS0309ASDKR-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5898In Stock
  • 1000:$0.2859
  • 500:$0.3573
  • 100:$0.4824
  • 10:$0.6250
  • 1:$0.7100
FDMS0309AS
DISTI # FDMS0309ASTR-ND		ON SemiconductorMOSFET N-CH 30V 21A PT8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.2515
FDMS0309AS_SN00347
DISTI # FDMS0309AS_SN00347-ND		ON SemiconductorMOSFET N-CH
RoHS: Compliant
Min Qty: 1
Container: Tape & Reel (TR)		Limited Supply - Call
    FDMS0309AS
    DISTI # FDMS0309AS    		ON SemiconductorTrans MOSFET N-CH 30V 21A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0309AS)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 3000:$0.2639
    • 6000:$0.2619
    • 12000:$0.2579
    • 18000:$0.2549
    • 30000:$0.2489
    FDMS0309AS
    DISTI # 68X0370    		ON SemiconductorPT8 NCH 30/20V S PQF / REEL0
    • 24000:$0.2140
    • 9000:$0.2210
    • 1:$0.2290
    FDMS0309AS
    DISTI # 512-FDMS0309AS    		ON SemiconductorMOSFET PT8 NCH 30/20V S PQF
    RoHS: Compliant    		8995
    • 1:$0.5900
    • 10:$0.4890
    • 100:$0.3160
    • 1000:$0.2530
    • 3000:$0.2130
    • 9000:$0.2060
    • 24000:$0.1980
    영상 부분 # 설명
    SSM3K72CFS,LF

    Mfr.#: SSM3K72CFS,LF

    OMO.#: OMO-SSM3K72CFS-LF

    		 MOSFET Small-signal Nch MOSFET ID: 0.15A
    BSS138LT1G

    Mfr.#: BSS138LT1G

    OMO.#: OMO-BSS138LT1G

    		 MOSFET 50V 200mA N-Channel
    CSD16403Q5A

    Mfr.#: CSD16403Q5A

    OMO.#: OMO-CSD16403Q5A

    		 MOSFET N-Ch NexFET Power MOSFETs
    NDS331N

    Mfr.#: NDS331N

    OMO.#: OMO-NDS331N

    		 MOSFET N-Ch LL FET Enhancement Mode
    FDS8878

    Mfr.#: FDS8878

    OMO.#: OMO-FDS8878

    		 MOSFET 30V N-Ch PowerTrench MOSFET
    CSD17578Q5A

    Mfr.#: CSD17578Q5A

    OMO.#: OMO-CSD17578Q5A

    		 MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 9.3mOhm 8-VSONP
    MCP73213T-A6SI/MF

    Mfr.#: MCP73213T-A6SI/MF

    OMO.#: OMO-MCP73213T-A6SI-MF

    		 Battery Management Dual cell OVP battery charger
    LTC2944IDD#PBF

    Mfr.#: LTC2944IDD#PBF

    OMO.#: OMO-LTC2944IDD-PBF

    		 Battery Management 60V Battery Gas Gauge with Voltage, Current & Temperature Measurement
    CMT-8540S-SMT-TR

    Mfr.#: CMT-8540S-SMT-TR

    OMO.#: OMO-CMT-8540S-SMT-TR

    		 Speakers & Transducers Buzzer 8.5mm sq 4kHz 5V SMT
    CMT-8540S-SMT-TR

    Mfr.#: CMT-8540S-SMT-TR

    OMO.#: OMO-CMT-8540S-SMT-TR-CUI

    		 BUZZER, 8.5 MM SQUARE, 4 MM DE
    유효성
    재고:
    Available
    주문 시:
    1988
    수량 입력:
    FDMS0309AS의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.75
    US$0.75
    10
    US$0.63
    US$6.30
    100
    US$0.41
    US$40.60
    1000
    US$0.32
    US$325.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
    시작
    최신 제품
    • Gate Drivers
      Gate Drivers
      The ON Semiconductor IGBT / MOSFET drive optocoupler series provides isolation for safety regulations.
    • NCP137 700 mA LDO Regulators
      NCP137 700 mA LDO Regulators
      ON Semiconductor's NCP137 700 mA very low dropout bias rail regulators are ideal for space constrained, noise sensitive applications.
    • NCP114 Low Dropout Regulators
      NCP114 Low Dropout Regulators
      ON Semiconductor's NCP114 is a high performance, 300 mA, low dropout, linear regulator. This device delivers very high PSRR (over 75 dB at 1 kHz) and excellent dynamic performance as load/li
    • Compare FDMS0309AS
      Compare FDMS0309AS
      FDMS0309A vs FDMS0309AS vs FDMS0309ASSN00347
    • LC717A00AR Touch Sensor
      LC717A00AR Touch Sensor
      These high performance Capacitance-Digital-Converter LSI for electrostatic capacitive touch sensors feature 8-input capacitance.
    • FDMQ86530L Quad-MOSFET
      FDMQ86530L Quad-MOSFET
      ON Semiconductor’s FDMQ86530L solution improves the conduction loss and efficiency of the conventional diode bridge, providing a ten-fold improvement in power dissipation.
    More Newest Products
    Top