2N6123

Mfr. #:: 2N6123
제조사:: Central Semiconductor
설명:: Bipolar Transistors - BJT NPN Med Pwr
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2N6123 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: 2N6123 Datasheet
ECAD Model:

제품 속성
속성 값

제조사:: 중앙반도체

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

트랜지스터 극성:: NPN

컬렉터-이미터 전압 VCEO 최대:: 80 V

컬렉터-베이스 전압 VCBO:: 80 V

이미터-베이스 전압 VEBO:: 5 V

수집기-이미터 포화 전압:: 1.4 V

최대 DC 수집기 전류:: 4 A

이득 대역폭 곱 fT:: 2.5 MHz

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

시리즈:: 2N6123

포장:: 대부분

상표:: 중앙반도체

지속적인 수집가 전류:: 0.45 A

DC 수집기/기본 이득 hfe 최소:: 7 at 4 A, 2 V

Pd - 전력 손실:: 40 W

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 400

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 2N6123 PBFREE

단위 무게:: 0.081130 oz

Tags: 2N612, 2N61, 2N6

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2N6123 설명

***et Japan: Transistor GP BJT NPN 80V 4A 3-Pin TO-220

***nell: TRANSISTOR,NPN,4A,80V,TO220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2.5MHz; Power Dissipation Pd: 40W; DC Collector Current: 4A; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Gain Bandwidth ft Typ: 2.5MHz; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C

***ark: BIPOLAR TRANSISTOR, NPN, 80V TO-220; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:4A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:2.5MHzRoHS Compliant: Yes

***ure Electronics: TIP Series NPN 2 W 100 V 6 A Flange Mount Epitaxial Silicon Transistor-TO-220-3

***eco: Transistor TIP41 NPN Medium Power Linear Switch 100V 6A TO-220

***roFlash: Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ow.cn: Trans GP BJT NPN 100V 6A 2000mW 3-Pin(3+Tab) TO-220 Tube

***nell: TRANSISTOR, BIPOL, NPN, 100V, TO-220AB-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 3MHz; Power Dissipation Pd: 65W; DC Collector Current: 6A; DC Current Gain hFE: 15hFE; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018)

***Yang: Transistor GP BJT PNP 100V 1A 3-Pin TO-220AB Rail - Rail/Tube

***ure Electronics: TIP30C Series 100 V 1 A PNP Flange Mount Epitaxial Silicon Transistor - TO-220-3

***emi: 1.0 A, 100 V PNP Bipolar Power Transistor

***r Electronics: Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***el Electronic: Bipolar Transistors - BJT PNP Epitaxial Sil

***eco: Transistor General Purpose BJT PNP 100 Volt 3 Amp 3-Pin 3+ Tab TO-220 Rail

***ure Electronics: TIP Series PNP 2 W 100 V 3 A Flange Mount Epitaxial Silicon Transistor-TO-220-3

***Yang: Transistor GP BJT PNP 100V 3A 3-Pin TO-220AB Rail - Rail/Tube

***roFlash: Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ter Electronics: 100V, 3A PNP Epitaxial Silicon Transistor

***ure Electronics: D45H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220

***enic: 80V 50W 10A 40@4A1V 1V@8A400mA PNP +150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS

***Yang: Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

*** Electronic Components: Bipolar Transistors - BJT PNP Gen Pur Switch

***icroelectronics SCT: Power Bipolar, PNP, 1V, 400mA, TO-220, Tube

***ponent Stockers USA: 10 A 80 V PNP Si POWER TRANSISTOR TO-220AB

***ark: Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:10A; Power Dissipation Pd:50W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:120Hfe; Msl:- Rohs Compliant: Yes

***ure Electronics: D44H11 Series NPN/PNP 80 V 10 A Silicon Power Transistor Flange Mount - TO-220

***enic: 80V 50W 10A 40@4A1V 1V@8A400mA NPN +150¡Í@(Tj) TO-220(TO-220-3) Bipolar Transistors - BJT ROHS

***r Electronics: Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***Yang: Trans GP BJT NPN 80V 20A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube

*** Electronic Components: Bipolar Transistors - BJT NPN Gen Pur Switch

***icroelectronics SCT: Power Bipolar, NPN, 1V, 400mA, TO-220, Tube

***ment14 APAC: TRANSISTOR, NPN; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:50W; DC Collector Current:10A; DC Current Gain hFE:60; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:10A; Hfe Min:40; Package / Case:TO-220; Power Dissipation Pd:50W; Termination Type:Through Hole

***ure Electronics: TIP121 Series 80 V 5 A NPN Complementary Power Darlington Transistor TO-220-3

***roFlash: Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

***ical: Trans Darlington NPN 80V 5A 2000mW 3-Pin(3+Tab) TO-220AB Tube

***icroelectronics SCT: Power Bipolar, NPN, 3V, 12mA, TO-220, Tube

***ark: Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:80V; Dc Collector Current:5A; Power Dissipation Pd:65W; Transistor Mounting:through Hole; No. Of Pins:3Pins; Transition Frequency Ft:-; Dc Current Gain Hfe:1000Hfe; Msl:- Rohs Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
2N6123 DISTI # 2N6123-ND	Central Semiconductor Corp	TRANS NPN 80V 4A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	133In Stock	5200:$0.9856 2800:$0.9979 800:$1.1679 400:$1.4784 25:$1.8480 10:$2.0700 1:$2.2900
2N6123 DISTI # 2N6123	Central Semiconductor Corp	Bipolar Power Transistor NPN Amplifier/Switch 80V 4A 3-Pin TO-220 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N6123) RoHS: Not Compliant Min Qty: 400 Container: Box	Americas - 0
2N612340 DISTI # 2N612340	Renesas Electronics Corporation	- Bulk (Alt: 2N612340) RoHS: Not Compliant Min Qty: 1000 Container: Bulk	Americas - 0	10000:$0.3019 5000:$0.3060 3000:$0.3149 2000:$0.3242 1000:$0.3342
2N6123 DISTI # 33C8316	NTE Electronics Inc	TRANSISTOR NPN SILICON BVCEO=80V IC=4A TO-220 CASE FOR POWER AMPLIFIER AND SWITCHING APPLICATIONS	54	1000:$1.2600 500:$1.3300 100:$1.4000 50:$1.5000 1:$1.6400
2N6123 DISTI # 01H1387	SPC Multicomp	BIPOLAR TRANSISTOR, NPN, 80V TO-220,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:2.5MHz,Power Dissipation Pd:40W,DC Collector Current:4A,DC Current Gain hFE:100hFE,No. of Pins:3Pins RoHS Compliant: Yes	0	1:$0.2560 10:$0.2560 50:$0.2560 100:$0.2560 500:$0.2560 1000:$0.2560 5000:$0.2560 10000:$0.2560
2N6123	Central Semiconductor Corp	80 V 4 A 40 W NPN Through Hole Silicon Power Transistor - TO-220-3 RoHS: Compliant	399Bag	400:$0.8650 800:$0.8250
2N6123 DISTI # 610-2N6123	Central Semiconductor Corp	Bipolar Transistors - BJT NPN Med Pwr RoHS: Compliant	344	1:$1.9700 10:$1.7600 100:$1.4000 500:$1.2300 1000:$1.0200 2500:$0.9510 5000:$0.9160
2N6123	NTE Electronics Inc	RoHS: Not Compliant	54 Factory Stock	50:$1.1200 100:$0.8600 200:$0.8000 500:$0.7500
2N612340	Harris Semiconductor	RoHS: Not Compliant	150	1000:$0.3300 500:$0.3500 100:$0.3600 25:$0.3800 1:$0.4100
2N6123	Motorola Semiconductor Products	* FREE SHIPPING ORDERS OVER $100 * Bipolar Junction Transistor, NPN Type, TO-220AB	16	15:$1.5000 3:$1.8000 1:$2.4000
2N6123	Harris Semiconductor		153
2N6123	Motorola Semiconductor Products		28	3:$1.8000 13:$1.3500
2N6123 DISTI # 1862520	SPC Multicomp	TRANSISTOR,NPN,4A,80V,TO220 RoHS: Compliant	17	1000:$0.8890 500:$0.9170 250:$1.0100 1:$1.2800
2N6123 DISTI # 1862520	SPC Multicomp	TRANSISTOR,NPN,4A,80V,TO220	37	500:£0.5760 250:£0.8060 100:£1.1500 25:£1.6100 5:£2.0100

관련 상품

영상	부분 #	설명
	Mfr.#: BC847BLT1G OMO.#: OMO-BC847BLT1G	Bipolar Transistors - BJT 100mA 50V NPN
	Mfr.#: 2N6126 OMO.#: OMO-2N6126	Bipolar Transistors - BJT PNP Med Power
	Mfr.#: LL4148 OMO.#: OMO-LL4148	Diodes - General Purpose, Power, Switching Small Signal Diode
	Mfr.#: ES2D OMO.#: OMO-ES2D	Rectifiers 2.0a Rectifier UF Recovery
	Mfr.#: ES1G-13-F OMO.#: OMO-ES1G-13-F	Rectifiers 1.0A 400V
	Mfr.#: BYV26C-TR OMO.#: OMO-BYV26C-TR	Rectifiers 1 Amp 600 Volt 30 Amp IFSM
	Mfr.#: NTD3055-094T4G OMO.#: OMO-NTD3055-094T4G	MOSFET 60V 12A N-Channel
	Mfr.#: IRF530NPBF OMO.#: OMO-IRF530NPBF	MOSFET MOSFT 100V 17A 90mOhm 24.7nC
	Mfr.#: 1N5819HW-7-F OMO.#: OMO-1N5819HW-7-F	Schottky Diodes & Rectifiers Vr/40V Io/1A T/R
	Mfr.#: LL4148 OMO.#: OMO-LL4148-ON-SEMICONDUCTOR	DIODE GEN PURP 100V 200MA SOD80

유효성

재고:: 339
주문 시:: 2322
수량 입력:

2N6123의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.97~~; ~~US$1.97~~

10: ~~US$1.76~~; ~~US$17.60~~

100: ~~US$1.40~~; ~~US$140.00~~

500: ~~US$1.23~~; ~~US$615.00~~

1000: ~~US$1.02~~; ~~US$1 020.00~~

2500: ~~US$0.95~~; ~~US$2 377.50~~

5000: ~~US$0.92~~; ~~US$4 580.00~~

10000: ~~US$0.88~~; ~~US$8 800.00~~

시작

2N612 15
2N61 85
2N6 1203

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2N6123

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes