SSM6N67NU,LF

Mfr. #:: SSM6N67NU,LF
제조사:: Toshiba
설명:: MOSFET LowON Res MOSFET ID=4A VDSS=30V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SSM6N67NU,LF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SSM6N67NU,LF Datasheet SSM6N67NU,LF Datasheet (P4-P6)SSM6N67NU,LF Datasheet (P7-P9)
ECAD Model:
추가 정보:: SSM6N67NU,LF 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: UDFN-6

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 4 A

Rds On - 드레인 소스 저항:: 39.1 mOhms

Vgs th - 게이트 소스 임계 전압:: 400 mV

Vgs - 게이트 소스 전압:: 12 V, - 8 V

Qg - 게이트 차지:: 3.2 nC

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1 W

구성:: 듀얼

채널 모드:: 상승

포장:: 릴

시리즈:: SSM6N67NU

상표:: 도시바

순방향 트랜스컨덕턴스 - 최소:: 6 S

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 17 ns

일반적인 켜기 지연 시간:: 26 ns

단위 무게:: 0.000300 oz

Tags: SSM6N6, SSM6N, SSM6, SSM

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SSM6N67NU,LF 추가 정보

U-MOSVIII-H Low Voltage High Efficiency MOSFETs: Toshiba's U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, etc., as well as DC-DC power supplies for communication equipment, servers and data centers. Fabricated with the latest Gen-8 trench MOS process, these will help improve the efficiency of power supplies. Features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. U-MOSVIII-H now includes new automotive-qualified MOSFETs in a small package.

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