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IPW65R110CFDAFKSA1

IPW65R110CFDAFKSA1
Mfr. #:
IPW65R110CFDAFKSA1
제조사:
Infineon Technologies
설명:
RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPW65R110CFDAFKSA1 데이터 시트
배달:
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ECAD Model:
추가 정보:
IPW65R110CFDAFKSA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
IPW65R110
포장
튜브
부분 별칭
IPW65R110CFDA IPW65R110CFDAXK SP000895236
단위 무게
1.340411 oz
상표명
쿨모스
패키지 케이스
TO-247-3
기술
시
채널 수
1 Channel
트랜지스터형
1 N-Channel
Id-연속-드레인-전류
31.2 A
Vds-드레인-소스-고장-전압
650 V
Rds-On-Drain-Source-Resistance
110 mOhms
트랜지스터 극성
N-채널
Tags
IPW65R110CFDA, IPW65R11, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet, N-Ch, Aec-Q101, 650V, To-247-3; Svhc:no Svhc (12-Jan-2017) Rohs Compliant: Yes
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube
***ical
Trans MOSFET N-CH 650V 31.2A
***i-Key
MOSFET N-CH 650V 31.2A TO247
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, AEC-Q101, 650V, TO-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS CFDA Series; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANALE N, AEC-Q101 650V TO-247-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS CFDA Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 31.2A TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		219In Stock
  • 720:$5.6983
  • 240:$6.6906
  • 10:$8.0130
  • 1:$8.8400
IPW65R110CFDAFKSA1
DISTI # SP000895236		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: SP000895236)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 48
  • 1:€4.4900
  • 10:€4.0900
  • 25:€3.9900
  • 50:€3.7900
  • 100:€3.6900
  • 500:€3.4900
  • 1000:€3.2900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDAFKSA1		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube - Rail/Tube (Alt: IPW65R110CFDAFKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 240:$4.2900
  • 480:$4.0900
  • 960:$3.9900
  • 1440:$3.7900
  • 2400:$3.7900
IPW65R110CFDAFKSA1
DISTI # IPW65R110CFDA		Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-247 Tube (Alt: IPW65R110CFDA)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 0
    IPW65R110CFDAFKSA1
    DISTI # 13AC9100    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3,SVHC:No SVHC (12-Jan-2017) RoHS Compliant: Yes15
    • 100:$5.3600
    • 50:$5.7700
    • 25:$6.1700
    • 10:$6.4700
    • 1:$7.1600
    IPW65R110CFDAFKSA1
    DISTI # 726-IPW65R110CFDAFKS    		Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant    		348
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDA
    DISTI # 726-IPW65R110CFDA    		Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO247-3
    RoHS: Compliant    		263
    • 1:$7.1600
    • 10:$6.4700
    • 25:$6.1700
    • 100:$5.3600
    IPW65R110CFDAFKSA1
    DISTI # 2726081    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant    		15
    • 720:$8.1800
    • 240:$9.7600
    • 10:$11.8700
    • 1:$13.1800
    IPW65R110CFDAFKSA1
    DISTI # XSKDRABV0042852    		Infineon Technologies AG 
    RoHS: Compliant    		192
    • 192:$5.3600
    • 87:$5.7400
    IPW65R110CFDAFKSA1
    DISTI # 2726081    		Infineon Technologies AGMOSFET, N-CH, AEC-Q101, 650V, TO-247-3
    RoHS: Compliant    		15
    • 100:£4.1000
    • 50:£4.4100
    • 10:£4.7100
    • 5:£5.4700
    • 1:£6.0000
    영상 부분 # 설명
    IPW65R110CFD

    Mfr.#: IPW65R110CFD

    OMO.#: OMO-IPW65R110CFD

    		 MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    IPW65R110CFDFKSA1

    Mfr.#: IPW65R110CFDFKSA1

    OMO.#: OMO-IPW65R110CFDFKSA1

    		 MOSFET N-Ch 700V 31.2A TO247-3 CoolMOS CFD2
    IPW65R110CFDAFKSA1

    Mfr.#: IPW65R110CFDAFKSA1

    OMO.#: OMO-IPW65R110CFDAFKSA1

    		 MOSFET N-Ch 650V 31.2A TO247-3
    IPW65R110CFDFKSA2

    Mfr.#: IPW65R110CFDFKSA2

    OMO.#: OMO-IPW65R110CFDFKSA2

    		 MOSFET
    IPW65R110CFDFKSA2

    Mfr.#: IPW65R110CFDFKSA2

    OMO.#: OMO-IPW65R110CFDFKSA2-INFINEON-TECHNOLOGIES

    		 HIGH POWER_LEGACY
    IPW65R110CFD , 2SJ288

    Mfr.#: IPW65R110CFD , 2SJ288

    OMO.#: OMO-IPW65R110CFD-2SJ288-1190

    		 신규 및 오리지널
    IPW65R110CFD 65F6110

    Mfr.#: IPW65R110CFD 65F6110

    OMO.#: OMO-IPW65R110CFD-65F6110-1190

    		 신규 및 오리지널
    IPW65R110CFDA , 2SJ289

    Mfr.#: IPW65R110CFDA , 2SJ289

    OMO.#: OMO-IPW65R110CFDA-2SJ289-1190

    		 신규 및 오리지널
    IPW65R110CFDFKSA1

    Mfr.#: IPW65R110CFDFKSA1

    OMO.#: OMO-IPW65R110CFDFKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 31.2A TO247
    IPW65R110CFDAFKSA1

    Mfr.#: IPW65R110CFDAFKSA1

    OMO.#: OMO-IPW65R110CFDAFKSA1-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET N-Ch 650V 31.2A TO247-3
    유효성
    재고:
    Available
    주문 시:
    3000
    수량 입력:
    IPW65R110CFDAFKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$5.68
    US$5.68
    10
    US$5.40
    US$54.01
    100
    US$5.12
    US$511.65
    500
    US$4.83
    US$2 416.15
    1000
    US$4.55
    US$4 548.00
    시작
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