SI2316DS-T1-GE3

SI2316DS-T1-GE3
Mfr. #:
SI2316DS-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 30V 3.4A 0.96W 50mohm @ 10V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI2316DS-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2316DS-T1-GE3 DatasheetSI2316DS-T1-GE3 Datasheet (P4-P6)SI2316DS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SI2316DS-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
상표명:
TrenchFET
포장:
시리즈:
SI2
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SI2316DS-GE3
단위 무게:
0.000282 oz
Tags
SI2316D, SI2316, SI231, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
***i-Key
MOSFET N-CH 30V 2.9A SOT23-3
***
N-CHANNEL 30-V (D-S) MOSFET
***ark
N CHANNEL MOSFET, 30V, 3.4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current, Id:3.4A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:0.8V ;RoHS Compliant: Yes
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
부분 # 제조 설명 재고 가격
SI2316DS-T1-GE3
DISTI # V36:1790_09216801
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000000:$0.2454
  • 1500000:$0.2456
  • 300000:$0.2511
  • 30000:$0.2588
  • 3000:$0.2600
SI2316DS-T1-GE3
DISTI # SI2316DS-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 30V 2.9A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$0.2741
SI2316DS-T1-GE3
DISTI # SI2316DS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R (Alt: SI2316DS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2599
  • 18000:€0.2789
  • 12000:€0.3019
  • 6000:€0.3509
  • 3000:€0.5149
SI2316DS-T1-GE3
DISTI # SI2316DS-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2316DS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2299
  • 18000:$0.2369
  • 12000:$0.2429
  • 6000:$0.2539
  • 3000:$0.2619
SI2316DS-T1-GE3
DISTI # 12R3248
Vishay IntertechnologiesN CH MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:3.4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:800mV,Power Dissipation Pd:960mW RoHS Compliant: Yes0
  • 2500:$0.3100
  • 1000:$0.3910
  • 500:$0.4450
  • 250:$0.5190
  • 100:$0.5840
  • 50:$0.6590
  • 25:$0.7240
  • 1:$0.8070
SI2316DS-T1-GE3
DISTI # 781-SI2316DS-GE3
Vishay IntertechnologiesMOSFET 30V 3.4A 0.96W 50mohm @ 10V
RoHS: Compliant
0
  • 3000:$0.2600
  • 6000:$0.2430
  • 9000:$0.2340
SI2316DS-T1-GE3Vishay Intertechnologies 2629
    SI2316DS-T1-GE3Vishay IntertechnologiesMOSFET 30V 3.4A 0.96W 50mohm @ 10V
    RoHS: Compliant
    Americas -
      영상 부분 # 설명
      SI2316DS-T1-E3

      Mfr.#: SI2316DS-T1-E3

      OMO.#: OMO-SI2316DS-T1-E3

      MOSFET 30V 3.4A 0.96W 50mohm @ 10V
      SI2316DS-T1-GE3

      Mfr.#: SI2316DS-T1-GE3

      OMO.#: OMO-SI2316DS-T1-GE3

      MOSFET 30V 3.4A 0.96W 50mohm @ 10V
      SI2316DS-T1

      Mfr.#: SI2316DS-T1

      OMO.#: OMO-SI2316DS-T1-1190

      MOSFET RECOMMENDED ALT 781-SI2316BDS-E3
      SI2316DS-T1-E3

      Mfr.#: SI2316DS-T1-E3

      OMO.#: OMO-SI2316DS-T1-E3-VISHAY

      MOSFET N-CH 30V 2.9A SOT23-3
      SI2316DS-T1-GE3

      Mfr.#: SI2316DS-T1-GE3

      OMO.#: OMO-SI2316DS-T1-GE3-VISHAY

      MOSFET N-CH 30V 2.9A SOT23-3
      SI2316DS-T1-E3-CUT TAPE

      Mfr.#: SI2316DS-T1-E3-CUT TAPE

      OMO.#: OMO-SI2316DS-T1-E3-CUT-TAPE-1190

      신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      3000
      수량 입력:
      SI2316DS-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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