IRG4BC10UDPBF

Mfr. #:: IRG4BC10UDPBF
제조사:: Infineon Technologies
설명:: IGBT Transistors 600V UltraFast 8-60kHz
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRG4BC10UDPBF 데이터 시트
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지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRG4BC10UDPBF Datasheet IRG4BC10UDPBF Datasheet (P4-P6)IRG4BC10UDPBF Datasheet (P7-P9)IRG4BC10UDPBF Datasheet (P10-P11)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-220-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 2.6 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 8.5 A

Pd - 전력 손실:: 38 W

최소 작동 온도:: - 55 C

포장:: 튜브

키:: 8.77 mm

길이:: 10.54 mm

너비:: 4.69 mm

상표:: 인피니언 테크놀로지스

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 1000

하위 카테고리:: IGBT

부품 번호 별칭:: SP001535702

단위 무게:: 0.211644 oz

Tags: IRG4BC10UD, IRG4BC10U, IRG4BC10, IRG4BC1, IRG4BC, IRG4B, IRG4, IRG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRG4BC10UDPBF 설명

***ied Electronics & Automation: IGBT, with Ultrafast Soft Recovery Diode, 600 V, 5.0 A, TO-220AB

***ical: Trans IGBT Chip N-CH 600V 8.5A 3-Pin (3+Tab) TO-220AB

***ernational Rectifier: 600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package

***ure Electronics: IRG4BC10UD Series 600 V 5 A Insulated Gate Bipolar Transistor - TO-220AB

***ment14 APAC: IGBT, N; Transistor Type:IGBT; DC Collector Current:8.5A; Power Dissipation Pd:38W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:8.5A; Package / Case:TO-220AB; Power Dissipation Max:38W; Power Dissipation Pd:38W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Market price

부분 #	제조	설명	재고	가격
IRG4BC10UDPBF DISTI # IRG4BC10UDPBF-ND	Infineon Technologies AG	IGBT 600V 8.5A 38W TO220AB RoHS: Compliant Min Qty: 1000 Container: Tube	Limited Supply - Call
IRG4BC10UDPBF DISTI # 63J7472	Infineon Technologies AG	SINGLE IGBT, 600V, 8.5A,DC Collector Current:8.5A,Collector Emitter Saturation Voltage Vce(on):2.61V,Power Dissipation Pd:38W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes	0
IRG4BC10UDPBF DISTI # 70017060	Infineon Technologies AG	IGBT,with Ultrafast Soft Recovery Diode,600 V,5.0 A,TO-220AB RoHS: Compliant	0	950:$2.5100
IRG4BC10UDPBF DISTI # 942-IRG4BC10UDPBF	Infineon Technologies AG	IGBT Transistors 600V UltraFast 8-60kHz RoHS: Compliant	0
IRG4BC10UDPBF DISTI # 8655869P	Infineon Technologies AG	IGBT 600V 8.5A ULTRAFAST DIODE TO-220AB, TU	212	25:£0.6060
IRG4BC10UDPBF DISTI # 1611638	Infineon Technologies AG	IGBT, N RoHS: Compliant	0	10000:$1.4100 5000:$1.4600 2000:$1.5200 1000:$1.6300 500:$1.9800 100:$2.2500 10:$2.8200 1:$3.3100

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