CSD19538Q2T

Mfr. #:: CSD19538Q2T
설명:: MOSFET 100V, 49mOhm NexFET Power MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CSD19538Q2T 데이터 시트
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추가 정보:: CSD19538Q2T 추가 정보 CSD19538Q2T Product Details

제품 속성
속성 값

제조사:: 텍사스 인스트루먼트

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: WSON-FET-6

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 14.4 A

Rds On - 드레인 소스 저항:: 59 mOhms

Vgs th - 게이트 소스 임계 전압:: 3.2 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 4.3 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 2.5 W

구성:: 하나의

채널 모드:: 상승

상표명:: 넥스펫

포장:: 릴

키:: 0.75 mm

길이:: 2 mm

시리즈:: CSD19538Q2

너비:: 2 mm

상표:: 텍사스 인스트루먼트

가을 시간:: 2 ns

상품 유형:: MOSFET

상승 시간:: 3 ns

공장 팩 수량:: 250

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 7 ns

일반적인 켜기 지연 시간:: 5 ns

단위 무게:: 0.000208 oz

Tags: CSD19538, CSD1953, CSD19, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD19538Q2T 설명

***as Instruments: 100-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 59 mOhm 6-WSON -55 to 150

***ical: Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R

***ark: Mosfet Nch 100V 13.1A 6Wson Rohs Compliant: Yes

*** Stop Electro: Power Field-Effect Transistor, 4.6A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N-CH, 100V, 13.1A, WSON-6; Polarité transistor: Canal N; Courant de drain Id: 13.1A; Tension Vds max..: 100V; Résistance Rds(on): 0.049ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 3.2V; Dissipation de puissance

***ical: Trans MOSFET N-CH 100V 4.1A Automotive 6-Pin Direct-FET SB T/R

***ineon SCT: A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperesr., MG-WDSON-4, RoHS

***ark: N Channel, MOSFET, 100V, 14.4A, DirectFET SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

***ernational Rectifier: A 100V Automotive Grade Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes with optimized gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio amplifier performance factors su

***ineon: Benefits: Advanced process technology; Exceptionally small footprint and low profile; High power density; Low parasitic parameters; Dual-sided cooling; 175C operating temperature; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant and halogen free; Automotive qualified

***(Formerly Allied Electronics): A 100V DIGITAL AUDIO SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET SB PACK

***ment14 APAC: MOSFET, N-CH, 100V, 14.4A, SB; Transistor Polarity:N Channel; Continuous Drain Current Id:14.4mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:30W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:14.4A; Power Dissipation Pd:30W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ernational Rectifier: A 100V Digital Audio Single N-Channel HEXFET Power MOSFET in a DirectFET SB package rated at 14.4 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied

***ineon: Benefits: RoHS Compliant; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Class-D Audio Amplifier Applications; Low Qg for better THD and improved efficiency; Low Qrr for better THD and improved efficiency; Low package stray inductance for reduced ringing and lower EMI | Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side

***emi: N-Channel Power MOSFET, QFET®, 100 V, 10 A, 180 mΩ, DPAK

***ure Electronics: N-Channel 100 V 0.18 Ohm 16 nC Surface Mount Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 100V, 10A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 40W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***C: Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) D2PAK

***ure Electronics: Single N-Channel 100 V 70 W 37 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 79 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:17A; On Resistance Rds(On):0.09Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

***ark: MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V

***emi: N-Channel Power MOSFET, QFET®, 100 V, 15.6 A, 63 mΩ, DPAK

***ure Electronics: N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3

***r Electronics: Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N-CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***icroelectronics: N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package

***ark: N CHANNEL MOSFET, 100V, 13A, D-PAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:13A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***AS INSRUMENT: This 100-V, 49-mΩ, SON 2-mm × 2-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

CSD19538Q2T 추가 정보

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

부분 #	설명	재고	가격
CSD19538Q2T DISTI # 296-44612-1-ND	MOSFET NCH 100V 13.1A 6WSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1539In Stock	100:$0.4326 10:$0.5640 1:$0.6400
CSD19538Q2T DISTI # 296-44612-6-ND	MOSFET NCH 100V 13.1A 6WSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1539In Stock	100:$0.4326 10:$0.5640 1:$0.6400
CSD19538Q2T DISTI # 296-44612-2-ND	MOSFET NCH 100V 13.1A 6WSON RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	1250In Stock	1250:$0.2656 500:$0.3320 250:$0.3901
CSD19538Q2T DISTI # V72:2272_16335409	Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R	0
CSD19538Q2T DISTI # V39:1801_16335409	Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R	0
CSD19538Q2T DISTI # CSD19538Q2T	TISCSD19538Q2T - Tape and Reel (Alt: CSD19538Q2T) RoHS: Compliant Min Qty: 1750 Container: Reel	Americas - 0	17500:$0.2079 8750:$0.2139 5250:$0.2209 3500:$0.2289 1750:$0.2399
CSD19538Q2T DISTI # CSD19538Q2T	TISCSD19538Q2T (Alt: CSD19538Q2T) RoHS: Compliant Min Qty: 250	Asia - 0
CSD19538Q2T DISTI # 95AC0751	MOSFET NCH 100V 13.1A 6WSON	0	5000:$0.9290 2500:$0.9570 1000:$1.1900 500:$1.3200 100:$1.4300 10:$1.7800 1:$2.1000
CSD19538Q2T	100V, N ch NexFET MOSFET™, single SON2x2, 59mOhm	1000	1000:$0.1900 750:$0.2100 500:$0.2600 250:$0.3200 100:$0.3500 25:$0.4100 10:$0.4400 1:$0.5000
CSD19538Q2 DISTI # 595-CSD19538Q2	MOSFET 100V N-CH MOSFET RoHS: Compliant	14119	1:$0.5700 10:$0.4800 100:$0.3080 1000:$0.2460 2000:$0.2230 3000:$0.2070 9000:$0.2000 24000:$0.1920
CSD19538Q2T DISTI # 595-CSD19538Q2T	MOSFET 100V, 49mOhm NexFET Power MOSFET RoHS: Compliant	0	1:$0.6200 10:$0.5100 100:$0.3320 250:$0.3320 1000:$0.2650 2000:$0.2400 5000:$0.2240 10000:$0.2150 25000:$0.2070
CSD19538Q2T DISTI # CSD19538Q2T	Transistor: N-MOSFET,unipolar,100V,14.4A,20.2W,WSON6 2x2mm	85	3:$0.5700 1:$0.6300
CSD19538Q2T . DISTI # 2617074	MOSFET, N-CH, 100V, 13.1A, WSON-6	795	500:£0.2640 250:£0.2830 100:£0.3020 25:£0.4820 5:£0.5250

영상	부분 #	설명
	Mfr.#: AD8603AUJZ-REEL7 OMO.#: OMO-AD8603AUJZ-REEL7	Precision Amplifiers MicroPwr RRIO Low Noise Prec SGL CMOS
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	Mfr.#: LM74610QDGKRQ1 OMO.#: OMO-LM74610QDGKRQ1	Hot Swap Voltage Controllers Smart Diode
	Mfr.#: LMG1205YFXT OMO.#: OMO-LMG1205YFXT	Gate Drivers 5A 100V HALF-BRIDGE GATE DRIVER FOR ENH
	Mfr.#: ADUM5028-5BRIZ OMO.#: OMO-ADUM5028-5BRIZ	Switching Voltage Regulators isoPower 3kV,
	Mfr.#: LMR33620ADDA OMO.#: OMO-LMR33620ADDA	Switching Voltage Regulators 36V 2A 400KHZ REGULATOR
	Mfr.#: CSD13385F5 OMO.#: OMO-CSD13385F5	MOSFET 12V, N ch NexFET MOSFETG , single LGA 0.8x1.5, 19mOhm 3-PICOSTAR -55 to 150
	Mfr.#: ADA4691-2ACBZ-R7 OMO.#: OMO-ADA4691-2ACBZ-R7-ANALOG-DEVICES-INC-ADI	Precision Amplifiers Low Power WB Low Noise RRO Dual
	Mfr.#: AD8603AUJZ-REEL7 OMO.#: OMO-AD8603AUJZ-REEL7-ANALOG-DEVICES-INC-ADI	Precision Amplifiers MicroPwr RRIO Low Noise Prec SGL CMOS
	Mfr.#: LM74610QDGKRQ1 OMO.#: OMO-LM74610QDGKRQ1-TEXAS-INSTRUMENTS	Hot Swap Voltage Controllers Zero Iq Reverse Polarity Protection Smart Diode Controller 8-VSSOP -40 to 125

CSD19538Q2T

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes