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| PartNumber | CSD19538Q2 | CSD19538Q2T | CSD19538Q3A |
| Description | MOSFET 100V, N ch NexFET MOSFETG , single SON2x2, 59mOhm 6-WSON -55 to 150 | MOSFET 100V, 49mOhm NexFET Power MOSFET | MOSFET 100V, N ch NexFET MOSFETG , single SON3x3, 61mOhm 8-VSONP -55 to 150 |
| Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | WSON-FET-6 | WSON-FET-6 | VSONP-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 50 A | 14.4 A | 14.4 A |
| Rds On Drain Source Resistance | 59 mOhms | 59 mOhms | 61 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.8 V | 3.2 V | 3.2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 5.6 nC | 4.3 nC | 4.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 20.2 W | 2.5 W | 2.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | NexFET | NexFET | NexFET |
| Packaging | Reel | Reel | Reel |
| Height | 0.75 mm | 0.75 mm | 0.9 mm |
| Length | 2 mm | 2 mm | 3.15 mm |
| Series | CSD19538Q2 | CSD19538Q2 | CSD19538Q3A |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Width | 2 mm | 2 mm | 3 mm |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Forward Transconductance Min | 19 S | - | - |
| Fall Time | 2 ns | 2 ns | 2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | 3 ns | 3 ns |
| Factory Pack Quantity | 3000 | 250 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 7 ns | 7 ns | 7 ns |
| Typical Turn On Delay Time | 5 ns | 5 ns | 5 ns |
| Unit Weight | - | 0.000208 oz | - |