MRF6V3090NBR1

Mfr. #:: MRF6V3090NBR1
제조사:: NXP / Freescale
설명:: RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MRF6V3090NBR1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: E

트랜지스터 극성:: N-채널

기술:: 시

Vds - 드레인 소스 항복 전압:: 115 V

얻다:: 22 dB

출력 파워:: 18 W

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: TO-270-4

포장:: 릴

구성:: 하나의

동작 주파수:: 0.47 GHz to 0.86 GHz

시리즈:: MRF6V3090N

유형:: RF 전력 MOSFET

상표:: NXP / 프리스케일

습기에 민감한:: 네

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 500

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: 10 V

Vgs th - 게이트 소스 임계 전압:: 2.4 V

부품 번호 별칭:: 935310252528

단위 무게:: 0.067412 oz

Tags: MRF6V3090NB, MRF6V3, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6V3090NBR1 설명

***W: RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735

***nsix Microsemi: 1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET TO-272

***ical: Trans RF MOSFET N-CH 110V 5-Pin TO-270 WB T/R

*** Electronic Components: RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4

***ponent Stockers USA: UHF BAND Si N-CHANNEL RF POWER MOSFET TO-272

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

*** Electronics: FREESCALE SEMICONDUCTOR MRF6V4300NBR5 RF MOSFET, N CHANNEL, 110V, TO-272

*** Electronic Components: RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET

***or: RF POWER FIELD-EFFECT TRANSISTOR

***ark: RF MOSFET, N CHANNEL, 110V, TO-272; Transistor Type:RF FET; Drain Source Voltage, Vds:110V; RF Transistor Case:TO-272; Gain:22dB; Gate-Source Voltage:10V; Operating Frequency Max:450MHz; Output Power, Pout:300W

***escale Semiconductor: GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V

***et: RF Power Field Effect Transistor 26V 1800MHz to 2000MHz 4-Pin TO-270 WB T/R

***ical: Trans RF MOSFET N-CH 68V 4-Pin TO-270 WB EP T/R

*** Electronic Components: RF MOSFET Transistors 1880MHZ 60W

***et: Transistor RF FET N-CH 68V 900MHz 4-Pin TO-270WB T/R

***ponent Stockers USA: UHF BAND Si N-CHANNEL RF POWER MOSFET TO-270AA

***roFlash: Trans Mosfet N-ch 68V 4-PIN TO-270 Wb Ep T/r

***i-Key: RF ULTRA HIGH FREQUENCY BAND, N-

***et: Trans MOSFET N-CH 65V 4-Pin TO-270 WB EP T/R

*** Electronic Components: RF MOSFET Transistors 1990MHZ 60W 28V TO270WB4N

***ponent Stockers USA: L BAND Si N-CHANNEL RF POWER MOSFET TO-270

***et: Trans MOSFET N-CH 68V 4-Pin TO-270 WB EP T/R

***ponent Stockers USA: UHF BAND Si N-CHANNEL RF POWER MOSFET TO-270AA

*** Electronic Components: RF MOSFET Transistors 100W 900MHZ26V

***i-Key: RF ULTRA HIGH FREQUENCY BAND, N-

Market price

부분 #	제조	설명	재고	가격
MRF6V3090NBR1 DISTI # 26078380	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R	81	1:$90.3960
MRF6V3090NBR1 DISTI # MRF6V3090NBR1-ND	NXP Semiconductors	FET RF 110V 860MHZ TO272-4 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	Limited Supply - Call	500:$51.2742
MRF6V3090NBR1 DISTI # MRF6V3090NBR1	NXP Semiconductors	Trans MOSFET N-CH 110V 4-Pin TO-272 WB T/R - Tape and Reel (Alt: MRF6V3090NBR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$56.0900 1000:$53.8900 2000:$51.7900 3000:$49.9900 5000:$48.9900
MRF6V3090NBR1 DISTI # MRF6V3090NBR1	NXP Semiconductors	Trans MOSFET N-CH 110V 4-Pin TO-272 WB T/R (Alt: MRF6V3090NBR1) RoHS: Compliant Min Qty: 500 Container: Tape and Reel	Europe - 0	500:€55.8900 1000:€53.5900 2000:€51.5900 3000:€47.8900 5000:€44.6900
MRF6V3090NBR1 DISTI # 841-MRF6V3090NBR1	NXP Semiconductors	RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4 RoHS: Compliant	0	500:$49.7400
MRF6V3090NBR5 DISTI # 841-MRF6V3090NBR5	NXP Semiconductors	RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4 RoHS: Compliant	25	1:$87.1700 5:$85.4800 10:$82.6500 25:$79.1600 50:$78.0700 100:$72.6100
MRF6V3090NBR1	Freescale Semiconductor	RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272 RoHS: Compliant	2	1000:$66.9400 500:$70.4600 100:$73.3600 25:$76.5000 1:$82.3900
MRF6V3090NBR1 DISTI # MRF6V3090NBR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	1	500:$59.5200

관련 상품

영상	부분 #	설명
	Mfr.#: MRF6V3090NBR1 OMO.#: OMO-MRF6V3090NBR1	RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4
	Mfr.#: MRF6V3090NR1 OMO.#: OMO-MRF6V3090NR1	RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4
	Mfr.#: MRF6V3090NR5 OMO.#: OMO-MRF6V3090NR5	RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4
	Mfr.#: MRF6V3090N OMO.#: OMO-MRF6V3090N-1190	신규 및 오리지널
	Mfr.#: MRF6V3090NBR OMO.#: OMO-MRF6V3090NBR-1190	신규 및 오리지널
	Mfr.#: MRF6V3090NR1 OMO.#: OMO-MRF6V3090NR1-NXP-SEMICONDUCTORS	FET RF 110V 860MHZ TO270-4
	Mfr.#: MRF6V3090NBR1 OMO.#: OMO-MRF6V3090NBR1-NXP-SEMICONDUCTORS	FET RF 110V 860MHZ TO272-4
	Mfr.#: MRF6V3090NR5 OMO.#: OMO-MRF6V3090NR5-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4
	Mfr.#: MRF6V3090NBR5 OMO.#: OMO-MRF6V3090NBR5-NXP-SEMICONDUCTORS	FET RF 110V 860MHZ TO272-4

유효성

재고:: Available
주문 시:: 3000
수량 입력:

MRF6V3090NBR1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

시작

MRF6V3090NB 3
MRF6V3 6
MRF6V 92
MRF6 332
MRF 2307

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MRF6V3090NBR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes