 |  | | |
| PartNumber | MRF6V3090NBR1 | MRF6V3090N | MRF6V3090NBR |
| Description | RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4 | ||
| Manufacturer | NXP | - | NXP / Freescale |
| Product Category | RF MOSFET Transistors | - | Transistors - FETs, MOSFETs - Single |
| RoHS | E | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Technology | Si | - | Si |
| Vds Drain Source Breakdown Voltage | 115 V | - | - |
| Gain | 22 dB | - | 22 dB |
| Output Power | 18 W | - | 18 W |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-270-4 | - | - |
| Packaging | Reel | - | Reel |
| Configuration | Single | - | - |
| Operating Frequency | 0.47 GHz to 0.86 GHz | - | 0.47 GHz to 0.86 GHz |
| Series | MRF6V3090N | - | MRF6V3090N |
| Type | RF Power MOSFET | - | RF Power MOSFET |
| Brand | NXP / Freescale | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2.4 V | - | - |
| Part # Aliases | 935310252528 | - | - |
| Unit Weight | 0.067412 oz | - | 0.067412 oz |
| Package Case | - | - | TO-270-4 WB |
| Vgs Gate Source Voltage | - | - | 10 V |
| Vds Drain Source Breakdown Voltage | - | - | 115 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.4 V |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
NXP / Freescale |
MRF6V3090NBR1 | RF MOSFET Transistors VHV6 860MHz 90W TO 272WB4 | |
| MRF6V3090NR1 | RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4 | ||
| MRF6V3090NR5 | RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4 | ||
| MRF6V3090N | 신규 및 오리지널 | ||
| MRF6V3090NBR | 신규 및 오리지널 | ||
NXP Semiconductors |
MRF6V3090NR1 | FET RF 110V 860MHZ TO270-4 | |
| MRF6V3090NBR1 | FET RF 110V 860MHZ TO272-4 | ||
| MRF6V3090NR5 | RF MOSFET Transistors VHV6 860MHz 90W TO 270WB4 | ||
| MRF6V3090NBR5 | FET RF 110V 860MHZ TO272-4 |