CY7C2170KV18-550BZXC

CY7C2170KV18-550BZXC
Mfr. #:
CY7C2170KV18-550BZXC
제조사:
Cypress Semiconductor
설명:
SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
CY7C2170KV18-550BZXC 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
CY7C2170KV18-550BZXC 추가 정보 CY7C2170KV18-550BZXC Product Details
제품 속성
속성 값
제조사:
사이프러스 반도체
제품 카테고리:
스램
RoHS:
Y
메모리 크기:
18 Mbit
조직:
512 k x 36
액세스 시간:
-
최대 클록 주파수:
550 MHz
인터페이스 유형:
평행 한
공급 전압 - 최대:
1.9 V
공급 전압 - 최소:
1.7 V
공급 전류 - 최대:
820 mA
최소 작동 온도:
0 C
최대 작동 온도:
+ 70 C
장착 스타일:
SMD/SMT
패키지/케이스:
FBGA-165
포장:
쟁반
메모리 유형:
휘발성 물질
시리즈:
CY7C2170KV18
유형:
동기
상표:
사이프러스 반도체
습기에 민감한:
상품 유형:
스램
공장 팩 수량:
136
하위 카테고리:
메모리 및 데이터 저장
Tags
CY7C2170K, CY7C217, CY7C21, CY7C2, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
CY7C2170KV Series 18 Mb (1M x 18) 550 MHz 1.8 V DDR II+ SRAM - FBGA-165
***ical
SRAM Chip Sync Dual 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS
***or
DDR SRAM, 512KX36, 0.45NS PBGA16
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II+, 18432 Kb Density, 550 MHz Frequency, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et Europe
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ponent Stockers USA
1M X 18 QDR SRAM 0.45 ns PBGA165
***ress Semiconductor SCT
Synchronous SRAM, BGA-165, RoHS
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
***I SCT
1Mx18, 250Mhz, SRAM, FBGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***enic
LFBGA-165(15x17) SRAM ROHS
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Cypress QDR-II+ DDR-II+ Sync SRAM
Cypress' QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT). The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
부분 # 제조 설명 재고 가격
CY7C2170KV18-550BZXC
DISTI # CY7C2170KV18-550BZXC-ND
Cypress SemiconductorIC SRAM 18M PARALLEL 165FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray
136In Stock
  • 136:$52.4852
  • 50:$59.9712
  • 25:$61.2536
  • 10:$62.6180
  • 1:$69.5700
CY7C2170KV18-550BZXCCypress SemiconductorDDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
RoHS: Compliant
219
  • 1000:$59.6100
  • 500:$62.7400
  • 100:$65.3200
  • 25:$68.1200
  • 1:$73.3600
CY7C2170KV18-550BZXC
DISTI # 727-7C2170KV550BZXC
Cypress SemiconductorSRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
RoHS: Compliant
0
  • 136:$50.4500
영상 부분 # 설명
CY7C2170KV18-550BZXC

Mfr.#: CY7C2170KV18-550BZXC

OMO.#: OMO-CY7C2170KV18-550BZXC

SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
CY7C2170KV18-400BZXC

Mfr.#: CY7C2170KV18-400BZXC

OMO.#: OMO-CY7C2170KV18-400BZXC

SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
CY7C2170KV18-400BZC

Mfr.#: CY7C2170KV18-400BZC

OMO.#: OMO-CY7C2170KV18-400BZC

SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
CY7C2170KV18-400BZC

Mfr.#: CY7C2170KV18-400BZC

OMO.#: OMO-CY7C2170KV18-400BZC-CYPRESS-SEMICONDUCTOR

IC SRAM 18M PARALLEL 165FBGA
CY7C2170KV18-550BZXC

Mfr.#: CY7C2170KV18-550BZXC

OMO.#: OMO-CY7C2170KV18-550BZXC-CYPRESS-SEMICONDUCTOR

SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
CY7C2170KV18-400BZXC

Mfr.#: CY7C2170KV18-400BZXC

OMO.#: OMO-CY7C2170KV18-400BZXC-CYPRESS-SEMICONDUCTOR

SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
유효성
재고:
Available
주문 시:
4500
수량 입력:
CY7C2170KV18-550BZXC의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$65.66
US$65.66
5
US$59.64
US$298.20
10
US$56.98
US$569.80
25
US$56.82
US$1 420.50
50
US$52.58
US$2 629.00
100
US$50.45
US$5 045.00
시작
최신 제품
  • PSoC® 4 BLE 256 KB Module with Bluetooth®
    Cypress' PSoC 4 BLE 256 KB device, two crystals for the antenna matching network, a PCB antenna and other passives, while providing access to all GPIOs of the device.
  • T543 Series COTS Polymer Electrolytic
    KEMET Organic Capacitor (KO-CAP) is a solid electrolytic capacitor with a conductive polymer cathode capable of delivering low ESR and capacitance retention at high frequencies.
  • HK Series Inductors
    TAIYO YUDEN's HK series inductors have expanded to include price competitive, AEC-Q200 qualified high-reliability version inductors.
  • Compare CY7C2170KV18-550BZXC
    CY7C2170KV18400BZC vs CY7C2170KV18400BZXC vs CY7C2170KV18550BZXC
  • Piezoelectric Acoustic Modules
    KEMET's multilayer piezoelectric bimorph actuators are ceramic elements used to convert electrical energy into mechanical energy such as displacement or force.
  • CY8CKIT-042-BLE Bluetooth® Low Energy Develop
    The Cypress CY8CKIT-042-BLE development kit supports system-level designs including example projects to enable Bluetooth Low Energy mixed-signal embedded designs.
Top