HGTG30N60C3D

Mfr. #:: HGTG30N60C3D
제조사:: ON Semiconductor / Fairchild
설명:: IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: HGTG30N60C3D 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: E

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 600 V

수집기-이미터 포화 전압:: 1.5 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 63 A

Pd - 전력 손실:: 208 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

시리즈:: HGTG30N60C3D

포장:: 튜브

연속 수집가 현재 IC 최대:: 63 A

키:: 20.82 mm

길이:: 15.87 mm

너비:: 4.82 mm

상표:: 온세미컨덕터 / 페어차일드

지속적인 수집가 전류:: 63 A

게이트-이미터 누설 전류:: +/- 100 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 450

하위 카테고리:: IGBT

부품 번호 별칭:: HGTG30N60C3D_NL

단위 무게:: 0.225401 oz

Tags: HGTG30N60C, HGTG30N60, HGTG30N6, HGTG30N, HGTG30, HGTG3, HGTG, HGT

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Quality Guarantees

We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HGTG30N60C3D 설명

***ied Electronics & Automation: HGTG30N60C3D; IGBT Transistor N-channel; 63 A 600 V; 3- Pin TO-247

***ter Electronics: 600V,63A,UFS,SERIES NCH IGBT W/ANTI-PARALLEL HYPERFAST DIODE

***ical: Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail

***ure Electronics: HGTG30N60C3D Series 600 V 63 A Flange Mount UFS N-Channel IGBT-TO-247

***et: SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODES

***ser: IGBTs 63a,600V, NCh IGBT Hyperfast anti-para

***Components: TRANSISTOR IGBT N-CH 600V 63A TO247

***i-Key: IGBT NCH UFS 600V 30A TO247

***ment14 APAC: SINGLE IGBT, 600V, 63A

***Semiconductor: 600V, PT IGBT

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:63A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:208W; Package/Case:TO-247; C-E Breakdown Voltage:600V ;RoHS Compliant: Yes

***nell: IGBT,N CH,600V,30A,TO-247; DC Collector Current:63A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Max:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3

***rchild Semiconductor: The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.Formerly Developmental Type TA49014.

Market price

부분 #	제조	설명	재고	가격
HGTG30N60C3D DISTI # V99:2348_06359325	ON Semiconductor	PWR IGBT UFS 30A 600V W/DIODE	426	900:$4.8179 450:$4.9600 10:$5.7250 1:$6.5160
HGTG30N60C3D DISTI # HGTG30N60C3D-ND	ON Semiconductor	IGBT 600V 63A 208W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	891In Stock	900:$5.1058 450:$5.5999 10:$7.0820 1:$7.8400
HGTG30N60C3D DISTI # 25845335	ON Semiconductor	PWR IGBT UFS 30A 600V W/DIODE	426	10:$5.7250 2:$6.5160
HGTG30N60C3D DISTI # HGTG30N60C3D	ON Semiconductor	Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG30N60C3D) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	450:$4.7900 900:$4.7900 1800:$4.7900 2700:$4.7900 4500:$4.7900
HGTG30N60C3D DISTI # 58K1593	ON Semiconductor	Trans IGBT Chip N-CH 600V 63A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K1593) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$5.3400
HGTG30N60C3D DISTI # 58K1593	ON Semiconductor	IGBT,N CHANNEL,600V,63A,TO-247,DC Collector Current:63A,Collector Emitter Saturation Voltage Vce(on):1.5V,Power Dissipation Pd:208W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C RoHS Compliant: Yes	581	1:$5.5700
HGTG30N60C3D DISTI # 70418406	ON Semiconductor	HGTG30N60C3D,IGBT Transistor N-channel,63 A 600 V,3- Pin TO-247 RoHS: Not Compliant	2	1:$4.1560
HGTG30N60C3D DISTI # 512-HGTG30N60C3D	ON Semiconductor	IGBT Transistors 63a 600V NCh IGBT Hyperfast anti-para RoHS: Compliant	0
HGTG30N60C3D	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	9501	1000:$5.9900 500:$6.3000 100:$6.5600 25:$6.8400 1:$7.3700
HGTG30N60C3D_NL	Fairchild Semiconductor Corporation	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247 RoHS: Compliant	57	1000:$3.2200 500:$3.3900 100:$3.5300 25:$3.6800 1:$3.9700
HGTG30N60C3D	Fairchild Semiconductor Corporation		645
HGTG30N60C3D	Intersil Corporation	IGBT Transistor, TO-247AA	54	6:$3.6000 2:$4.8000 1:$7.2000
HGTG30N60C3D DISTI # 2463194	ON Semiconductor	TRANSISTOR IGBT N-CH 600V 63A TO247, EA	1	1:£5.6000 6:£5.1500
HGTG30N60C3D	Fairchild Semiconductor Corporation	RoHS: Compliant	Europe - 150
HGTG30N60C3D	Fairchild Semiconductor Corporation	INSTOCK	12
HGTG30N60C3D			1080
HGTG30N60C3D DISTI # C1S541901524025	ON Semiconductor	IGBT Chip RoHS: Not Compliant	426	100:$4.5700 25:$4.7390 10:$5.1040 1:$6.2100
HGTG30N60C3D DISTI # 1838985	ON Semiconductor	IGBT,N CH,600V,63A,TO-247 RoHS: Compliant	1134	1:£6.8100 5:£6.2500 10:£5.6500 50:£5.1200 100:£4.5800
HGTG30N60C3D DISTI # 1838985	ON Semiconductor	IGBT,N CH,600V,63A,TO-247 RoHS: Compliant	1107	1:$12.5000 10:$11.2900 450:$8.9300 900:$8.1400

관련 상품

영상	부분 #	설명
	Mfr.#: HGTG30N60B3 OMO.#: OMO-HGTG30N60B3	IGBT Transistors 600V N-Channel IGBT UFS Series
	Mfr.#: HGTG30N60B3 OMO.#: OMO-HGTG30N60B3-ON-SEMICONDUCTOR	IGBT Transistors 600V N-Channel IGBT UFS Series
	Mfr.#: HGTG30N100 OMO.#: OMO-HGTG30N100-1190	신규 및 오리지널
	Mfr.#: HGTG30N120C3D OMO.#: OMO-HGTG30N120C3D-1190	신규 및 오리지널
	Mfr.#: HGTG30N60A OMO.#: OMO-HGTG30N60A-1190	신규 및 오리지널
	Mfr.#: HGTG30N60A4 G30N60A4 OMO.#: OMO-HGTG30N60A4-G30N60A4-1190	신규 및 오리지널
	Mfr.#: HGTG30N60B5 OMO.#: OMO-HGTG30N60B5-1190	신규 및 오리지널
	Mfr.#: HGTG30N60C3 OMO.#: OMO-HGTG30N60C3-1190	Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247
	Mfr.#: HGTG30N60C3D_NL OMO.#: OMO-HGTG30N60C3D-NL-1190	- Bulk (Alt: HGTG30N60C3D_NL)
	Mfr.#: HGTG30N60B3D_Q OMO.#: OMO-HGTG30N60B3D-Q-1190	IGBT Transistors 600V IGBT UFS N-Channel

유효성

재고:: Available
주문 시:: 1500
수량 입력:

HGTG30N60C3D의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

450: ~~US$5.33~~; ~~US$2 398.50~~

900: ~~US$4.86~~; ~~US$4 374.00~~

시작

HGTG30N60C 3
HGTG30N60 23
HGTG30N6 24
HGTG30N 29
HGTG30 30
HGTG3 32
HGTG 150
HGT 430

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HGTG30N60C3D

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes