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BFP640ESDH6327XTSA1

BFP640ESDH6327XTSA1
Mfr. #:
BFP640ESDH6327XTSA1
제조사:
Infineon Technologies
설명:
RF Bipolar Transistors RF BIP TRANSISTORS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BFP640ESDH6327XTSA1 데이터 시트
배달:
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지불:
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ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
RF 양극성 트랜지스터
RoHS:
Y
시리즈:
BFP640
기술:
시
패키지/케이스:
SOT-343-4
포장:
릴
상표:
인피니언 테크놀로지스
상품 유형:
RF 양극성 트랜지스터
공장 팩 수량:
3000
하위 카테고리:
트랜지스터
부품 번호 별칭:
640ESD BFP BFP64ESDH6327XT H6327 SP000785482
Tags
BFP640ESDH, BFP640ES, BFP640E, BFP64, BFP6, BFP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin(3+Tab) SOT-343 T/R
***ure Electronics
BFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor
***ineon SCT
The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads, SOT343, RoHS
***ineon
The BFP640ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V. | Summary of Features: Robust high performance low noise amplifier based on Infineons reliable, high volume SiGe:C wafer technology; 2 kV ESD robustness (HBM) due to integrated protection circuits; High maximum RF input power of 21 dBm; 0.65 dB minimum noise figure typical at 1.5 GHz, 0.7 dB at 2.4 GHz, 6 mA; 26.5 dB maximum gain Gms typical at 1.5 GHz, 23 dB at 2.4 GHz, 30 mA; 27 dBm OIP3 typical at 2.4 GHz, 30 mA; Accurate SPICE GP model available to enable effective design in process (see chapter 6); Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5 / 3.5 / 5GHz, UWB, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
부분 # 제조 설명 재고 가격
BFP640ESDH6327XTSA1
DISTI # V72:2272_06384746		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		4202
  • 3000:$0.1631
  • 1000:$0.1979
  • 500:$0.2491
  • 250:$0.2544
  • 100:$0.2551
  • 25:$0.3649
  • 10:$0.3716
  • 1:$0.4293
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1CT-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		4371In Stock
  • 1000:$0.2297
  • 500:$0.2973
  • 100:$0.3784
  • 10:$0.5070
  • 1:$0.5900
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1DKR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		4371In Stock
  • 1000:$0.2297
  • 500:$0.2973
  • 100:$0.3784
  • 10:$0.5070
  • 1:$0.5900
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1TR-ND		Infineon Technologies AGRF TRANS NPN 4.7V 46GHZ SOT343
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1679
  • 15000:$0.1771
  • 6000:$0.1902
  • 3000:$0.2034
BFP640ESDH6327XTSA1
DISTI # 30986123		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		18000
  • 3000:$0.2533
BFP640ESDH6327XTSA1
DISTI # 26195568		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		4202
  • 3000:$0.1624
  • 1000:$0.1979
  • 500:$0.2491
  • 250:$0.2543
  • 100:$0.2551
  • 39:$0.3639
BFP640ESDH6327XTSA1
DISTI # BFP640ESDH6327XTSA1		Infineon Technologies AGTrans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R - Tape and Reel (Alt: BFP640ESDH6327XTSA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1889
  • 6000:$0.1819
  • 12000:$0.1749
  • 18000:$0.1689
  • 30000:$0.1659
BFP640ESDH6327XTSA1
DISTI # 01AC4780		Infineon Technologies AGRF BIP TRANSISTORS,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.7V,Transition Frequency ft:45GHz,Power Dissipation Pd:160mW,DC Collector Current:45mA,DC Current Gain hFE:250hFE,RF Transistor Case:TSFP,No. of RoHS Compliant: Yes1583
  • 1:$0.5800
  • 10:$0.4740
  • 25:$0.4120
  • 50:$0.3510
  • 100:$0.2890
  • 250:$0.2670
  • 500:$0.2460
  • 1000:$0.2240
BFP640ESDH6327XTSA1
DISTI # 726-BFP640ESDH6327		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
RoHS: Compliant		5673
  • 1:$0.5800
  • 10:$0.4740
  • 100:$0.2890
  • 1000:$0.2240
  • 3000:$0.1910
BFP 640ESD H6327
DISTI # 726-BFP640ESDH6327XT		Infineon Technologies AGRF Bipolar Transistors RF BIP TRANSISTORS
RoHS: Compliant		1815
  • 1:$0.5800
  • 10:$0.4740
  • 100:$0.2890
  • 1000:$0.2240
  • 3000:$0.1910
BFP640ESDH6327XTSA1Infineon Technologies AGBFP640ESD Series 4.7 V Robust Low Noise Silicon Germanium Bipolar RF Transistor
RoHS: Compliant		27000Reel
  • 3000:$0.1810
BFP640ESDH6327XTSA1Infineon Technologies AGRF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbon, NPN
RoHS: Compliant		345
  • 1000:$0.1700
  • 500:$0.1800
  • 100:$0.1900
  • 25:$0.2000
  • 1:$0.2100
BFP640ESDH6327XTSA1
DISTI # 8275154		Infineon Technologies AGLOW NOISE SIGE RF TRANSISTOR NPN SOT343, PK175
  • 25:£0.1600
  • 125:£0.1560
BFP640ESDH6327XTSA1
DISTI # 8275154P		Infineon Technologies AGLOW NOISE SIGE RF TRANSISTOR NPN SOT343, RL1925
  • 125:£0.1560
BFP640ESDH6327XTSA1
DISTI # 2443521		Infineon Technologies AGRF BIP TRANSISTORS
RoHS: Compliant		1583
  • 1:$0.9180
  • 10:$0.7500
  • 100:$0.4580
  • 1000:$0.3550
  • 3000:$0.3030
  • 9000:$0.2950
BFP640ESDH6327XTSA1
DISTI # C1S322000559949		Infineon Technologies AGTrans RF BJT NPN 4.1V 0.05A Automotive 4-Pin(3+Tab) SOT-343 T/R
RoHS: Compliant		4202
  • 250:$0.2543
  • 100:$0.2551
  • 25:$0.3639
  • 10:$0.3716
BFP640ESDH6327XTSA1
DISTI # 2443521		Infineon Technologies AGRF BIP TRANSISTORS
RoHS: Compliant		1608
  • 5:£0.4100
  • 25:£0.2410
  • 100:£0.2400
  • 250:£0.2390
  • 500:£0.2380
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 CONN UMCC JACK STR 50OHM SMD
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C0402S102K3RAC7867

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 CAP CER 1000PF 25V X7R 0402
CRCW080547K0FKEAC

Mfr.#: CRCW080547K0FKEAC

OMO.#: OMO-CRCW080547K0FKEAC-VISHAY-DALE

 D12/CRCW0805-C 100 47K 1% ET1
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Mfr.#: NCV551SN50T1G

OMO.#: OMO-NCV551SN50T1G-ON-SEMICONDUCTOR

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MAX2667EWT+T

Mfr.#: MAX2667EWT+T

OMO.#: OMO-MAX2667EWT-T-MAXIM-INTEGRATED

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유효성
재고:
Available
주문 시:
1988
수량 입력:
BFP640ESDH6327XTSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.57
US$0.57
10
US$0.47
US$4.74
100
US$0.29
US$28.90
1000
US$0.22
US$224.00
시작
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