 |  | | |
| PartNumber | BFP640ESDH6327XTSA1 | BFP640ESDH6327 | BFP640ESDH6327S |
| Description | RF Bipolar Transistors RF BIP TRANSISTORS | RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount SOT-343 (Alt: BFP 640ESD H6327) | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Series | BFP640 | BFP640 | - |
| Technology | Si | - | - |
| Package / Case | SOT-343-4 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Brand | Infineon Technologies | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 640ESD BFP BFP64ESDH6327XT H6327 SP000785482 | - | - |
| Part Aliases | - | 640ESD BFP BFP640ESDH6327XT H6327 SP000785482 | - |
| Package Case | - | SC-82A, SOT-343 | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-343 | - |
| Power Max | - | 200mW | - |
| Transistor Type | - | NPN | - |
| Current Collector Ic Max | - | 50mA | - |
| Voltage Collector Emitter Breakdown Max | - | 4.7V | - |
| DC Current Gain hFE Min Ic Vce | - | 110 @ 30mA, 3V | - |
| Frequency Transition | - | 46GHz | - |
| Noise Figure dB Typ f | - | 0.6dB ~ 2dB @ 150MHz ~ 10GHz | - |
| Gain | - | 7dB ~ 30dB | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BFP640ESDH6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS | |
| BFP640ESDH6327 | RF Transistor NPN 4.7V 50mA 46GHz 200mW Surface Mount SOT-343 (Alt: BFP 640ESD H6327) | ||
| BFP640ESDH6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTORS | ||
| BFP640ESDH6327S | 신규 및 오리지널 | ||
| BFP640ESDH6327XTSA1-CUT TAPE | 신규 및 오리지널 |