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SIHD1K4N60E-GE3

SIHD1K4N60E-GE3
Mfr. #:
SIHD1K4N60E-GE3
제조사:
Vishay
설명:
E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHD1K4N60E-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIHD1K4N60E-GE3 추가 정보
제품 속성
속성 값
Tags
SIHD1, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
4th Gen E Series MOSFETs
Vishay Semiconductors 4th Gen E Series MOSFETs are low Figure-Of-Merit (FOM) MOSFETs with E series technology. The 4th Gen E series MOSFETs feature low effective capacitance and reduced switching and conduction losses. These MOSFETs are avalanche energy rated (UIS). The 4th Gen MOSFETs are available in TO-220AB, PowerPAK® SO-8L, PowerPAK® 8 x 8, DPAK (TO-252), and Thin-Lead TO-220 FULLPAK packages. Typical applications include server and telecom power supplies, lighting, industrial, Switch Mode Power Supplies (SMPS), and Power Factor Correction (PFC) power supplies.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
부분 # 제조 설명 재고 가격
SIHD1K4N60E-GE3
DISTI # V99:2348_22712079		Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 1450 m @ 10V3000
  • 2500:$0.4537
  • 1000:$0.4579
  • 500:$0.5853
  • 100:$0.6969
  • 10:$1.0531
  • 1:$1.2277
SIHD1K4N60E-GE3
DISTI # SIHD1K4N60E-GE3-ND		Vishay SiliconixMOSFET N-CH DPAK TO-252
RoHS: Compliant
Min Qty: 1
Container: Bulk		3015In Stock
  • 5000:$0.4678
  • 2500:$0.4924
  • 1000:$0.5276
  • 500:$0.6683
  • 100:$0.8090
  • 10:$1.0380
  • 1:$1.1600
SIHD1K4N60E-GE3
DISTI # 33076649		Vishay IntertechnologiesE Series Power MOSFET DPAK (TO-252), 1450 m @ 10V3000
  • 2500:$0.4537
  • 1000:$0.4579
  • 500:$0.5853
  • 100:$0.6969
  • 14:$1.0531
SIHD1K4N60E-GE3
DISTI # SIHD1K4N60E-GE3		Vishay Intertechnologies- Tape and Reel (Alt: SIHD1K4N60E-GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.4289
  • 12000:$0.4409
  • 8000:$0.4529
  • 4000:$0.4729
  • 2000:$0.4869
SIHD1K4N60E-GE3
DISTI # 99AC9554		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:4.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Power DissipationRoHS Compliant: Yes45
  • 500:$0.6430
  • 250:$0.6960
  • 100:$0.7480
  • 50:$0.8240
  • 25:$0.8990
  • 10:$0.9750
  • 1:$1.1800
SIHD1K4N60E-GE3
DISTI # 78-SIHD1K4N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		3000
  • 1:$1.1700
  • 10:$0.9650
  • 100:$0.7410
  • 500:$0.6370
  • 1000:$0.5030
  • 2500:$0.4690
  • 5000:$0.4460
  • 10000:$0.4290
SIHD1K4N60E-GE3
DISTI # 3019080		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-25245
  • 500:£0.4620
  • 250:£0.5000
  • 100:£0.5370
  • 10:£0.7530
  • 1:£0.9690
SIHD1K4N60E-GE3
DISTI # 3019080		Vishay IntertechnologiesMOSFET, N-CH, 4.2A, 600V, TO-252
RoHS: Compliant		45
  • 1000:$0.5930
  • 500:$0.7490
  • 250:$0.8380
  • 100:$0.9230
  • 25:$1.2500
  • 5:$1.3700
영상 부분 # 설명
SIHD1K4N60E-GE3

Mfr.#: SIHD1K4N60E-GE3

OMO.#: OMO-SIHD1K4N60E-GE3

 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
SIHD1K4N60E-GE3

Mfr.#: SIHD1K4N60E-GE3

OMO.#: OMO-SIHD1K4N60E-GE3-VISHAY

 E Series Power MOSFET DPAK (TO-252), 1450 m @ 10V
유효성
재고:
Available
주문 시:
3500
수량 입력:
SIHD1K4N60E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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