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IRFU120ATU

IRFU120ATU
Mfr. #:
IRFU120ATU
제조사:
ON Semiconductor / Fairchild
설명:
MOSFET 100V Single
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRFU120ATU 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFU120ATU DatasheetIRFU120ATU Datasheet (P4-P6)IRFU120ATU Datasheet (P7)
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
MOSFET
RoHS:
E
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
100 V
Id - 연속 드레인 전류:
8.4 A
Rds On - 드레인 소스 저항:
200 mOhms
Vgs - 게이트 소스 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
32 W
구성:
하나의
채널 모드:
상승
포장:
튜브
키:
16.3 mm
길이:
10.67 mm
트랜지스터 유형:
1 N-Channel
유형:
MOSFET
너비:
4.7 mm
상표:
온세미컨덕터 / 페어차일드
순방향 트랜스컨덕턴스 - 최소:
4.3 S
가을 시간:
28 ns
상품 유형:
MOSFET
상승 시간:
14 ns
공장 팩 수량:
70
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
36 ns
일반적인 켜기 지연 시간:
14 ns
부품 번호 별칭:
IRFU120ATU_NL
단위 무게:
0.139332 oz
Tags
IRFU120, IRFU12, IRFU1, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***-Wing Technology
Tube Through Hole N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 32W 28ns
***Yang
Trans MOSFET N-CH 100V 8.4A 3-Pin(3+Tab) IPAK Rail - Bulk
***inecomponents.com
N-CH/100V/8.4A/0.2OHM/Substitute of IRFU120TU & IRFU120A
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.4A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***emi
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK
***ark
MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
***r Electronics
Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***(Formerly Allied Electronics)
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***ure Electronics
Single N-Channel 100 V 0.265 Ohm 20 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
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*** Stop Electro
Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***trelec
MOSFET Operating temperature: -55...175 °C Drive: logic level Housing type: IPAK Polarity: N Variants: Enhancement mode Power dissipation: 48 W
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; Logic Level
***ment14 APAC
MOSFET, N, 100V, 11A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:100V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:10A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; On State resistance @ Vgs = 10V:185mohm; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:35A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
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***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE
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***ure Electronics
Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48
***ment14 APAC
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***ark
N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
*** Stop Electro
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부분 # 제조 설명 재고 가격
IRFU120ATU
DISTI # IRFU120ATU-ND		ON SemiconductorMOSFET N-CH 100V 8.4A IPAK
RoHS: Compliant
Min Qty: 5040
Container: Tube		Limited Supply - Call
    IRFU120ATU
    DISTI # 512-IRFU120ATU    		ON SemiconductorMOSFET 100V Single
    RoHS: Compliant    		0
      IRFU120ATUFairchild Semiconductor CorporationPower Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
      RoHS: Compliant      		2580
      • 1000:$0.9100
      • 500:$0.9600
      • 100:$1.0000
      • 25:$1.0400
      • 1:$1.1200
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      유효성
      재고:
      Available
      주문 시:
      5500
      수량 입력:
      IRFU120ATU의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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