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NE3515S02-T1C-A

NE3515S02-T1C-A
Mfr. #:
NE3515S02-T1C-A
제조사:
CEL
설명:
RF JFET Transistors Super Low Noise Pseudomorphic
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
NE3515S02-T1C-A 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3515S02-T1C-A DatasheetNE3515S02-T1C-A Datasheet (P4-P6)NE3515S02-T1C-A Datasheet (P7-P9)
ECAD Model:
제품 속성
속성 값
제조사:
셀
제품 카테고리:
RF JFET 트랜지스터
RoHS:
Y
트랜지스터 유형:
pHEMT
기술:
GaAs
얻다:
12.5 dB
Vds - 드레인 소스 항복 전압:
4 V
Vgs - 게이트 소스 항복 전압:
- 3 V
Id - 연속 드레인 전류:
88 mA
최대 작동 온도:
+ 125 C
Pd - 전력 손실:
165 mW
장착 스타일:
SMD/SMT
패키지/케이스:
S0-2
포장:
릴
동작 주파수:
12 GHz
제품:
RF JFET
유형:
GaAs pHEMT
상표:
셀
순방향 트랜스컨덕턴스 - 최소:
70 mS
NF - 노이즈 피겨:
0.3 dB
P1dB - 압축점:
14 dBm
상품 유형:
RF JFET 트랜지스터
공장 팩 수량:
2000
하위 카테고리:
트랜지스터
Tags
NE3515, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans FET N-CH 4V 88mA 4-Pin Case S-02 T/R
***i-Key
FET RF HFET 12GHZ 2V 10MA S02
부분 # 제조 설명 재고 가격
NE3515S02-T1C-A
DISTI # NE3515S02-T1C-ATR-ND		California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Limited Supply - Call
    NE3515S02-T1C-A
    DISTI # NE3515S02-T1C-ACT-ND    		California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NE3515S02-T1C-A
      DISTI # NE3515S02-T1C-ADKR-ND      		California Eastern Laboratories (CEL)FET RF HFET 12GHZ 2V 10MA S02
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NE3515S02-T1C-A
        DISTI # 551-NE3515S02-T1C-A        		California Eastern Laboratories (CEL)RF JFET Transistors Super Low Noise Pseudomorphic
        RoHS: Compliant        		0
          NE3515S02-T1C-ARenesas Electronics Corporation 
          RoHS: Not Compliant          		7790
          • 1000:$0.6600
          • 500:$0.6900
          • 100:$0.7200
          • 25:$0.7500
          • 1:$0.8100
          영상 부분 # 설명
          NE3515S02-T1C-A

          Mfr.#: NE3515S02-T1C-A

          OMO.#: OMO-NE3515S02-T1C-A

          		 RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-A

          Mfr.#: NE3515S02-A

          OMO.#: OMO-NE3515S02-A

          		 RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
          NE3515S02-T1D-A

          Mfr.#: NE3515S02-T1D-A

          OMO.#: OMO-NE3515S02-T1D-A

          		 RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-T1D-A

          Mfr.#: NE3515S02-T1D-A

          OMO.#: OMO-NE3515S02-T1D-A-CEL

          		 RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02-A

          Mfr.#: NE3515S02-A

          OMO.#: OMO-NE3515S02-A-CEL

          		 RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH
          NE3515S02-T1C-A

          Mfr.#: NE3515S02-T1C-A

          OMO.#: OMO-NE3515S02-T1C-A-CEL

          		 RF JFET Transistors Super Low Noise Pseudomorphic
          NE3515S02

          Mfr.#: NE3515S02

          OMO.#: OMO-NE3515S02-1190

          		 신규 및 오리지널
          유효성
          재고:
          Available
          주문 시:
          2500
          수량 입력:
          NE3515S02-T1C-A의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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