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| PartNumber | NE3515S02-T1C-A | NE3515S02-A | NE3515S02 |
| Description | RF JFET Transistors Super Low Noise Pseudomorphic | RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH | |
| Manufacturer | CEL | CEL | - |
| Product Category | RF JFET Transistors | RF JFET Transistors | - |
| RoHS | Y | Y | - |
| Transistor Type | pHEMT | pHEMT | - |
| Technology | GaAs | GaAs | - |
| Gain | 12.5 dB | 12.5 dB | - |
| Vds Drain Source Breakdown Voltage | 4 V | 4 V | - |
| Vgs Gate Source Breakdown Voltage | - 3 V | - 3 V | - |
| Id Continuous Drain Current | 88 mA | 88 mA | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Pd Power Dissipation | 165 mW | 165 mW | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | S0-2 | S0-2 | - |
| Packaging | Reel | Cut Tape | - |
| Operating Frequency | 12 GHz | 12 GHz | - |
| Product | RF JFET | RF JFET | - |
| Type | GaAs pHEMT | GaAs pHEMT | - |
| Brand | CEL | CEL | - |
| Forward Transconductance Min | 70 mS | 70 mS | - |
| NF Noise Figure | 0.3 dB | 0.3 dB | - |
| P1dB Compression Point | 14 dBm | 14 dBm | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | - |
| Factory Pack Quantity | 2000 | 1 | - |
| Subcategory | Transistors | Transistors | - |