CGHV14250F

Mfr. #:: CGHV14250F
제조사:: N/A
설명:: RF MOSFET HEMT 50V 440162
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV14250F 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CGHV14250F 추가 정보

제품 속성
속성 값

제조사: 울프스피드 / 크리어

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 튜브

장착 스타일: 나사

작동 온도 범위: -

패키지 케이스: 440162

기술: GaN SiC

구성: 하나의

트랜지스터형: 헴트

얻다: 18.6 dB

등급: -

출력 파워: 330 W

Pd 전력 손실: -

최대 작동 온도: + 130 C

최소 작동 온도: - 40 C

애플리케이션: -

동작 주파수: 1.2 GHz to 1.4 GHz

Id-연속-드레인-전류: 18 A

Vds-드레인-소스-고장-전압: 150 V

Vgs-th-Gate-Source-Threshold-Voltage: - 3 V

Rds-On-Drain-Source-Resistance: -

트랜지스터 극성: N-채널

순방향 트랜스컨덕턴스-최소: -

개발 키트: CGHV14250F-TB

Vgs-Gate-Source-Breakdown-Voltage: - 10 V to + 2 V

게이트 소스 차단 전압: -

최대 드레인 게이트 전압: -

NF-노이즈-피겨: -

P1dB-압축점: -

Tags: CGHV142, CGHV14, CGHV1, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV14250F 설명

***o-Tech: - 250W, 1200 - 1400MHz, GaN HEMT Flange Package

***i-Key: RF MOSFET HEMT 50V 440162

***hardson RFPD: RF POWER TRANSISTOR

CGHV14250F 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

부분 #	제조	설명	재고	가격
CGHV14250F DISTI # CGHV14250F-ND	Wolfspeed	RF MOSFET HEMT 50V 440162 RoHS: Compliant Min Qty: 1 Container: Tube	59In Stock	1:$367.8300
CGHV14250F-TB DISTI # CGHV14250F-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV14250 RoHS: Compliant Min Qty: 1 Container: Box	5In Stock	1:$550.0000
CGHV14250F DISTI # 941-CGHV14250F	Cree, Inc.	RF JFET Transistors GaN HEMT 1.2-1.4GHz, 250 Watt RoHS: Compliant	1	1:$367.8300
CGHV14250F-TB DISTI # 941-CGHV14250F-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	2	1:$550.0000

관련 상품

영상	부분 #	설명
	Mfr.#: CGHV1F025S OMO.#: OMO-CGHV1F025S	RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt
	Mfr.#: CGHV1F006S OMO.#: OMO-CGHV1F006S	RF JFET Transistors GaN HEMT DC-18GHz, 6 Watt
	Mfr.#: CGHV1J006D-GP4 OMO.#: OMO-CGHV1J006D-GP4	RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
	Mfr.#: CGHV1F006S-AMP3 OMO.#: OMO-CGHV1F006S-AMP3	RF Development Tools Test Board with GaN HEMT
	Mfr.#: CGHV1F006S-AMP1 OMO.#: OMO-CGHV1F006S-AMP1	RF Development Tools Test Board with GaN HEMT
	Mfr.#: CGHV1F006S-AMP1 OMO.#: OMO-CGHV1F006S-AMP1-WOLFSPEED	DEMO HEMT TRANS AMP1 CGHV1F006S
	Mfr.#: CGHV1F025S-AMP1 OMO.#: OMO-CGHV1F025S-AMP1-WOLFSPEED	DEMO HEMT TRANS AMP1 CGHV1F025S
	Mfr.#: CGHV14500F OMO.#: OMO-CGHV14500F-WOLFSPEED	RF JFET Transistors 1.2-1.4GHz 500W GaN Gain 17.1dB
	Mfr.#: CGHV1J025D OMO.#: OMO-CGHV1J025D-318	RF JFET Transistors DC-18GHz 25W GaN Gain@10GHz 17dB
	Mfr.#: CGHV1J070D OMO.#: OMO-CGHV1J070D-318	RF JFET Transistors DC-18GHz 70 Watts Gain 17dB @10GHz