NE3514S02-T1C-A

NE3514S02-T1C-A
Mfr. #:
NE3514S02-T1C-A
제조사:
CEL
설명:
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
NE3514S02-T1C-A 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3514S02-T1C-A DatasheetNE3514S02-T1C-A Datasheet (P4-P6)NE3514S02-T1C-A Datasheet (P7-P8)
ECAD Model:
제품 속성
속성 값
제조사
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
포장
장착 스타일
SMD/SMT
패키지 케이스
S0-2
기술
GaAs
트랜지스터형
pHEMT
얻다
10 dB
Pd 전력 손실
165 mW
최대 작동 온도
+ 125 C
동작 주파수
20 GHz
Id-연속-드레인-전류
70 mA
Vds-드레인-소스-고장-전압
4 V
순방향 트랜스컨덕턴스-최소
55 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
NF-노이즈-피겨
0.75 dB
Tags
NE3514S02-T1C, NE3514S02-T, NE3514, NE351, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans FET N-CH 4V 70mA HFET 4-Pin Case S-02 T/R
***et
Trans JFET N-CH 4V 70mA 4-Pin Micro-X
***i-Key
HJ-FET NCH 10DB S02
부분 # 제조 설명 재고 가격
NE3514S02-T1C-A
DISTI # NE3514S02-T1C-A-ND
California Eastern Laboratories (CEL)HJ-FET NCH 10DB S02
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Limited Supply - Call
    NE3514S02-T1C-ARenesas Electronics Corporation 
    RoHS: Not Compliant
    2000
    • 1000:$0.6200
    • 500:$0.6500
    • 100:$0.6800
    • 25:$0.7100
    • 1:$0.7600
    NE3514S02-T1C-A
    DISTI # 551-NE3514S02-T1C-A
    California Eastern Laboratories (CEL)RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
    RoHS: Compliant
    0
      NE3514S02-T1C-A(K)NEC Electronics GroupRF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET1185
      • 1027:$0.6825
      • 206:$0.7800
      • 1:$1.9500
      NE3514S02-T1C-A(K)NEC Electronics Group 1783
        영상 부분 # 설명
        NE3514S02-T1C-A(K)

        Mfr.#: NE3514S02-T1C-A(K)

        OMO.#: OMO-NE3514S02-T1C-A-K--1152

        RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET
        NE3514S02-T1B-A

        Mfr.#: NE3514S02-T1B-A

        OMO.#: OMO-NE3514S02-T1B-A-1152

        RF SMALL SIGNAL TRANSISTOR HFET
        NE3514S02-T1D-A

        Mfr.#: NE3514S02-T1D-A

        OMO.#: OMO-NE3514S02-T1D-A-318

        RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        NE3514S02-T1C-A

        Mfr.#: NE3514S02-T1C-A

        OMO.#: OMO-NE3514S02-T1C-A-CEL

        RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET
        NE3514S02-A

        Mfr.#: NE3514S02-A

        OMO.#: OMO-NE3514S02-A-CEL

        RF JFET Transistors K Band Super Low Noise Amp N-Ch
        NE3514S02

        Mfr.#: NE3514S02

        OMO.#: OMO-NE3514S02-1190

        신규 및 오리지널
        NE3514S02-T10

        Mfr.#: NE3514S02-T10

        OMO.#: OMO-NE3514S02-T10-1190

        신규 및 오리지널
        NE3514S02-T1C

        Mfr.#: NE3514S02-T1C

        OMO.#: OMO-NE3514S02-T1C-1190

        신규 및 오리지널
        NE3514S02-T1D

        Mfr.#: NE3514S02-T1D

        OMO.#: OMO-NE3514S02-T1D-1190

        신규 및 오리지널
        유효성
        재고:
        Available
        주문 시:
        3000
        수량 입력:
        NE3514S02-T1C-A의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$0.93
        US$0.93
        10
        US$0.88
        US$8.83
        100
        US$0.84
        US$83.70
        500
        US$0.79
        US$395.25
        1000
        US$0.74
        US$744.00
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