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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC018NE2LSATMA1 DISTI # 27032319 | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 27In Stock |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 27In Stock |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 25V 29A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC018NE2LSATMA1 DISTI # BSC018NE2LSATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 25V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC018NE2LSATMA1 DISTI # BSC018NE2LSATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 25V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC018NE2LSATMA1 DISTI # BSC018NE2LSATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 25V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC018NE2LSATMA1 DISTI # C1S322000464289 | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC018NE2LS DISTI # BSC018NE2LS | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON T/R (Alt: BSC018NE2LS) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 25000 |
|
| BSC018NE2LSATMA1 DISTI # BSC018NE2LSATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC018NE2LSATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSI | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP (Alt: BSC018NE2LSI) RoHS: Compliant Min Qty: 5000 | Asia - 0 | |
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 25V 29A 8-Pin TDSON EP - Tape and Reel (Alt: BSC018NE2LSIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC018NE2LSIATMA1 DISTI # 34AC1374 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes | 4867 |
|
| BSC018NE2LSATMA1 DISTI # 13AC8325 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:25V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power DissipationRoHS Compliant: Yes | 3229 |
|
| BSC018NE2LS | Infineon Technologies AG | Power Field-Effect Transistor, 29A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5217 |
|
| BSC018NE2LSI | Infineon Technologies AG | Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 4415 |
|
| BSC018NE2LSI DISTI # 726-BSC018NE2LSI | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 987 |
|
| BSC018NE2LS DISTI # 726-BSC018NE2LS | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 0 |
|
| BSC018NE2LSIXT DISTI # 726-BSC018NE2LSIATMA | Infineon Technologies AG | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS RoHS: Compliant | 0 |
|
| BSC018NE2LSI | Infineon Technologies AG | 8481 | ||
| BSC018NE2LSATMA1 DISTI # BSC018NE2LSATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-8 | 32 |
|
| BSC018NE2LSIATMA1 DISTI # BSC018NE2LSIATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,25V,29A,69W,PG-TDSON-8 | 5048 |
|
| BSC018NE2LSIATMA1 DISTI # 2781051 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant | 4877 |
|
| BSC018NE2LSATMA1 DISTI # 2725802 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant | 3244 |
|
| BSC018NE2LSIATMA1 DISTI # 2781051 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant | 4867 |
|
| BSC018NE2LSATMA1 DISTI # 2725802 | Infineon Technologies AG | MOSFET, N-CH, 25V, 100A, TDSON RoHS: Compliant | 3229 |
|
| BSC018NE2LS | Infineon Technologies AG | 25V,1.8m,100A,N-Channel Power MOSFET | 20 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
|
Mfr.#: BSC011N03LSIATMA1 OMO.#: OMO-BSC011N03LSIATMA1 |
MOSFET LV POWER MOS |
|
Mfr.#: BSC011N03LSG OMO.#: OMO-BSC011N03LSG-1190 |
신규 및 오리지널 |
|
Mfr.#: BSC014N03MS OMO.#: OMO-BSC014N03MS-1190 |
신규 및 오리지널 |
|
Mfr.#: BSC014NE2LSI OMO.#: OMO-BSC014NE2LSI-1190 |
Trans MOSFET N-CH 25V 33A 8-Pin TDSON T/R (Alt: BSC014NE2LSI) |
|
Mfr.#: BSC016N03MS OMO.#: OMO-BSC016N03MS-1190 |
Transistor: N-MOSFET, unipolar, 30V, 100A, 125W, PG-TDSON-8 |
|
Mfr.#: BSC018NE2LSI OMO.#: OMO-BSC018NE2LSI-1190 |
Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC019N02KS OMO.#: OMO-BSC019N02KS-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC014N04LSTATMA1 |
DIFFERENTIATED MOSFETS |
|
|
Mfr.#: BSC018NE2LSIATMA1 |
MOSFET N-CH 25V 29A TDSON-8 |
|
Mfr.#: BSC016N03LS G OMO.#: OMO-BSC016N03LS-G-128 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |