STP2NK100Z

Mfr. #:: STP2NK100Z
제조사:: STMicroelectronics
설명:: MOSFET N-Channel 1000V Zener SuperMESH
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: STP2NK100Z 데이터 시트
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ECAD Model:
추가 정보:: STP2NK100Z 추가 정보 STP2NK100Z Product Details

제품 속성
속성 값

제조사:: ST마이크로일렉트로닉스

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 1 kV

Id - 연속 드레인 전류:: 2 A

Rds On - 드레인 소스 저항:: 8.5 Ohms

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 16 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 70 W

구성:: 하나의

채널 모드:: 상승

상표명:: 슈퍼메시

포장:: 튜브

키:: 9.15 mm

길이:: 10.4 mm

시리즈:: STP2NK100Z

트랜지스터 유형:: 1 N-Channel

너비:: 4.6 mm

상표:: ST마이크로일렉트로닉스

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

단위 무게:: 0.011640 oz

Tags: STP2NK, STP2N, STP2, STP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STP2NK100Z 설명

***icroelectronics: N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in TO-220 package

***ure Electronics: N-Channel 1 kV 8.5 Ohm SuperMESH Power MosFet - TO-220

***ical: Trans MOSFET N-CH 1KV 1.85A 3-Pin(3+Tab) TO-220AB Tube

***ca Corp: Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: N CH POWER MOSFET, SuperMESH, 1000V, 1.85A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:1.85A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Power Dissipation:70W; MSL:- RoHS Compliant: Yes

***icroelectronics: N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET

***va Crawler: N-channel 900 V, 5 Ohm typ., 2.1 A SuperMESH Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 900V 2.1A 3-Pin(3+Tab) TO-220AB Tube

***enic: 900V 2.1A 70W 6.5´Î@10V1.05A 4.5V@50Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.1A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 6.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio

***r Electronics: Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-CHANNEL 800V - 3.8 Ohm - 2.5A TO-220 Zener-Protected SuperMESH™ Power MOSFET

***ical: Trans MOSFET N-CH 800V 2.5A 3-Pin(3+Tab) TO-220AB Tube

***ark: MOSFET, N, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:2.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:70W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***icroelectronics: N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220 package

***ical: Trans MOSFET N-CH 900V 3A 3-Pin(3+Tab) TO-220AB Tube

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***emi: Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220

*** Source Electronics: Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 900V 4A TO-220

***ure Electronics: N-Channel 900 V 4.2 O 22 nC Flange Mount QFET Mosfet - TO-220AB

***ment14 APAC: MOSFET, N-CH, 900V, 4A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Source Voltage Vds:900V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***nell: MOSFET, N, TO-220; Transistor Polarity:N; Max Current Id:4.2A; Max Voltage Vds:900V; On State Resistance:3.3ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:140W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220; No. of Pins:3; SVHC:Cobalt dichloride; Case Style:TO-220; Cont Current Id:4.2A; Device Marking:FQP4N90; Max On State Resistance:3.3ohm; Max Voltage Vgs th:5V; Power Dissipation Pd:140W; Pulse Current Idm:16.8A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:900V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

***ical: Trans MOSFET N-CH 800V 5.8A 3-Pin(3+Tab) TO-220AB Rail

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:158W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:5.8A; On State Resistance Max:1.95ohm; Package / Case:TO-220; Power Dissipation Pd:158W; Power Dissipation Pd:158W; Pulse Current Idm:23.2A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

***rchild Semiconductor: These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

***i-Key: MOSFET N-CH 900V 3.6A TO-220

***nell: MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.25ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 5V; Power Dissipation Pd

***ark: MOSFET, N, TO-220; Transistor type:MOSFET; Current, Id cont:3.6A; Resistance, Rds on:4.25R; Case style:TO-220 (SOT-78B); Case style, alternate:SOT-78B; Current, Idm pulse:14.4A; Pins, No. of:3; Power dissipation:130W; Power, Pd:130W; RoHS Compliant: Yes

STP2NK100Z 추가 정보

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

부분 #	제조	설명	재고	가격
STP2NK100Z DISTI # V99:2348_17730245	STMicroelectronics	Trans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	833	5000:$1.2850 2500:$1.2950 500:$1.6710 100:$1.9320 50:$2.1640 10:$2.4040 1:$3.1086
STP2NK100Z DISTI # V36:1790_06564677	STMicroelectronics	Trans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0	5000:$1.2360 2500:$1.2950 500:$1.6710 100:$1.9320 50:$2.1640 10:$2.4040 1:$3.1086
STP2NK100Z DISTI # 497-7518-5-ND	STMicroelectronics	MOSFET N-CH 1000V 1.85A TO-220 RoHS: Compliant Min Qty: 1 Container: Tube	16987In Stock	5000:$1.3186 2500:$1.3693 500:$1.7750 100:$2.1605 50:$2.5358 10:$2.6880 1:$2.9900
STP2NK100Z DISTI # 25957433	STMicroelectronics	Trans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	838	5:$3.1086
STP2NK100Z DISTI # STP2NK100Z	STMicroelectronics	Trans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube (Alt: STP2NK100Z) RoHS: Compliant Min Qty: 50 Container: Tube	Europe - 95	500:€0.3419 300:€0.3689 200:€0.3999 100:€0.4359 50:€0.5329
STP2NK100Z DISTI # STP2NK100Z	STMicroelectronics	Trans MOSFET N-CH 1KV 2A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STP2NK100Z) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	6000:$1.1900 10000:$1.1900 2000:$1.2900 4000:$1.2900 1000:$1.3900
STP2NK100Z DISTI # 511-STP2NK100Z	STMicroelectronics	MOSFET N-Channel 1000V Zener SuperMESH RoHS: Compliant	1980	1:$2.8500 10:$2.4200 100:$1.9400 500:$1.7000 1000:$1.4100 2000:$1.3100 5000:$1.2600
STP2NK100Z DISTI # 7610095P	STMicroelectronics	MOSFET N-CHANNEL 1KV 2A TO220, TU	395	250:£1.4340 100:£1.4940 50:£1.6740 10:£1.8560
STP2NK100Z DISTI # STP2NK100Z	STMicroelectronics	N-Ch+Z-Dio 1000V 1,85A 70W 8,5R TO220 RoHS: Compliant	130	10:€1.0500 50:€0.7500 200:€0.6000 500:€0.5700
STP2NK100Z DISTI # 2098314	STMicroelectronics	MOSFET, N CH, 1000V, 1.85A, TO 220 RoHS: Compliant	52	5000:$1.9000 2000:$1.9700 1000:$2.1200 500:$2.5600 100:$2.9200 10:$3.6500 1:$4.2900
STP2NK100Z DISTI # XSKDRABV0040344	STMicroelectronics	Power Field-EffectTransistor,26AI(D),100V,0.06ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB RoHS: Compliant	2295 in Stock0 on Order	2295:$0.5160 1300:$0.5529
STP2NK100Z DISTI # 2098314	STMicroelectronics	MOSFET, N CH, 1000V, 1.85A, TO 220	52	500:£1.2400 250:£1.3700 100:£1.4200 25:£1.6100 5:£1.8800

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STP2NK100Z

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes