 | |  | |
| PartNumber | STP2N80K5 | STP2N105K5 | STP2N62K3 |
| Description | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in TO-220 package | IGBT Transistors MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3 |
| Manufacturer | STMicroelectronics | STMicroelectronics | ST |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 800 V | 1.05 kV | - |
| Id Continuous Drain Current | 2 A | 1.5 A | - |
| Rds On Drain Source Resistance | 3.5 Ohms | 8 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 3 nC | 10 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 60 W | - |
| Configuration | Single | Single | Single |
| Tradename | MDmesh | MDmesh | - |
| Packaging | Tube | Tube | Tube |
| Series | STP2N80K5 | STP2N105K5 | STP2N62K3 |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 38.5 ns | - |
| Rise Time | - | 8.5 ns | - |
| Typical Turn Off Delay Time | - | 35 ns | - |
| Typical Turn On Delay Time | - | 14.5 ns | - |
| Package Case | - | - | TO-220-3 |
| Pd Power Dissipation | - | - | 45 W |
| Vgs Gate Source Voltage | - | - | 30 V |
| Id Continuous Drain Current | - | - | 2.2 A |
| Vds Drain Source Breakdown Voltage | - | - | 620 V |
| Rds On Drain Source Resistance | - | - | 3.6 Ohms |
| Qg Gate Charge | - | - | 15 nC |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
STMicroelectronics |
STP2NK90Z | MOSFET N-Ch 900 Volt 2.1Amp Zener SuperMESH | |
| STP2N80K5 | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | ||
| STP2NK100Z | MOSFET N-Channel 1000V Zener SuperMESH | ||
| STP2N105K5 | MOSFET N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in TO-220 package | ||
| STP2N95K5 | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | ||
| STP2NK60Z | MOSFET N-Ch 600 Volt 1.4Amp 511-STP22NF03L | ||
| STP2N95K5 | MOSFET N-CH 950V 2A TO220 | ||
| STP2N105K5 | MOSFET N-CH 1050V 1.5A TO-220AB | ||
| STP2N62K3 | IGBT Transistors MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH3 | ||
| STP2N80K5 | MOSFET N-CH 800V 2A TO220 | ||
| STP2NK100Z | MOSFET N-CH 1000V 1.85A TO-220 | ||
| STP2NK60Z | MOSFET N-CH 600V 1.4A TO-220 | ||
| STP2NK90Z | MOSFET N-CH 900V 2.1A TO-220 | ||
| STP2N60 | 신규 및 오리지널 | ||
| STP2N80 | 신규 및 오리지널 | ||
| STP2N80,2N80 | 신규 및 오리지널 | ||
| STP2N80FI | 신규 및 오리지널 | ||
| STP2NA50 | 신규 및 오리지널 | ||
| STP2NA50FI | 신규 및 오리지널 | ||
| STP2NC50FP | 신규 및 오리지널 | ||
| STP2NC60 | 신규 및 오리지널 | ||
| STP2NC60,2NC60 | 신규 및 오리지널 | ||
| STP2NC60,P2NC60 | 신규 및 오리지널 | ||
| STP2NC60,P2NC60, | 신규 및 오리지널 | ||
| STP2NC60,P2NC60,2N60 | 신규 및 오리지널 | ||
| STP2NC60,P2NC60,2N60, | 신규 및 오리지널 | ||
| STP2NC60FP | 신규 및 오리지널 | ||
| STP2NK60Z,P2NK60Z,2NK60Z | 신규 및 오리지널 | ||
| STP2NK60ZFP | 신규 및 오리지널 |