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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPI034NE7N3 G DISTI # IPI034NE7N3G-ND | Infineon Technologies AG | MOSFET N-CH 75V 100A TO262-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPI034NE7N3GAKSA1 DISTI # IPI034NE7N3GAKSA1 | Infineon Technologies AG | Trans MOSFET N-CH 75V 100A 3-Pin 3TO-262 Tube - Bulk (Alt: IPI034NE7N3GAKSA1) RoHS: Compliant Min Qty: 25000 Container: Bulk | Americas - 0 |
|
| IPI034NE7N3 G DISTI # 726-IPI034NE7N3G | Infineon Technologies AG | MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 RoHS: Compliant | 0 | |
| IPI034NE7N3G | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 7459 |
|
| IPI034NE7N3GAKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant | 498 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPI034NE7N3 G OMO.#: OMO-IPI034NE7N3-G |
MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 |
|
Mfr.#: IPI034NE7N3GAKSA1 OMO.#: OMO-IPI034NE7N3GAKSA1-1190 |
Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
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Mfr.#: IPI034NE7N3 OMO.#: OMO-IPI034NE7N3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPI034NE7N3G OMO.#: OMO-IPI034NE7N3G-1190 |
Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
|
|
Mfr.#: IPI034NE7N3G(034NE7N) |
신규 및 오리지널 |
|
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Mfr.#: IPI034NE7N3GS OMO.#: OMO-IPI034NE7N3GS-1190 |
신규 및 오리지널 |
|
Mfr.#: IPI034NE7N3 G |
IGBT Transistors MOSFET N-Ch 75V 100A I2PAK-3 OptiMOS 3 |
