HGT1S7N60C3DS9A

HGT1S7N60C3DS9A
Mfr. #:
HGT1S7N60C3DS9A
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors 14a 600V N-Ch IGBT UFS Series
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
HGT1S7N60C3DS9A 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
E
기술:
패키지/케이스:
TO-263AB-3
장착 스타일:
SMD/SMT
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
600 V
수집기-이미터 포화 전압:
1.6 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
14 A
Pd - 전력 손실:
60 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
포장:
연속 수집가 현재 IC 최대:
14 A
키:
4.83 mm
길이:
10.67 mm
너비:
9.65 mm
상표:
온세미컨덕터 / 페어차일드
지속적인 수집가 전류:
14 A
게이트-이미터 누설 전류:
+/- 250 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
800
하위 카테고리:
IGBT
부품 번호 별칭:
HGT1S7N60C3DS9A_NL
단위 무게:
0.056438 oz
Tags
HGT1S7N60C, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 14A 3-Pin(2+Tab) D2PAK T/R
***ser
IGBTs 14a, 600V, N-Ch IGBT UFS Series
***i-Key
IGBT 600V 14A 60W TO263AB
부분 # 제조 설명 재고 가격
HGT1S7N60C3DS9A
DISTI # HGT1S7N60C3DS9A-ND
ON SemiconductorIGBT 600V 14A 60W TO263AB
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
    HGT1S7N60C3DS9A
    DISTI # 512-HGT1S7N60C3DS9A
    ON SemiconductorIGBT Transistors 14a 600V N-Ch IGBT UFS Series
    RoHS: Compliant
    0
      HGT1S7N60C3DS9AHarris SemiconductorInsulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant
      25600
      • 1000:$2.0700
      • 500:$2.1800
      • 100:$2.2600
      • 25:$2.3600
      • 1:$2.5400
      영상 부분 # 설명
      HGT1S7N60C3DS

      Mfr.#: HGT1S7N60C3DS

      OMO.#: OMO-HGT1S7N60C3DS

      IGBT Transistors 7A 600V TF=275NS
      HGT1S7N60A4

      Mfr.#: HGT1S7N60A4

      OMO.#: OMO-HGT1S7N60A4-1190

      신규 및 오리지널
      HGT1S7N60A40S

      Mfr.#: HGT1S7N60A40S

      OMO.#: OMO-HGT1S7N60A40S-1190

      신규 및 오리지널
      HGT1S7N60A4DS,G7N60A4D

      Mfr.#: HGT1S7N60A4DS,G7N60A4D

      OMO.#: OMO-HGT1S7N60A4DS-G7N60A4D-1190

      신규 및 오리지널
      HGT1S7N60A4S

      Mfr.#: HGT1S7N60A4S

      OMO.#: OMO-HGT1S7N60A4S-1190

      신규 및 오리지널
      HGT1S7N60A4S9A

      Mfr.#: HGT1S7N60A4S9A

      OMO.#: OMO-HGT1S7N60A4S9A-1190

      IGBT Transistors 600V N-Channel IGBT SMPS Series
      HGT1S7N60B3

      Mfr.#: HGT1S7N60B3

      OMO.#: OMO-HGT1S7N60B3-1190

      Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S7N60B3D

      Mfr.#: HGT1S7N60B3D

      OMO.#: OMO-HGT1S7N60B3D-1190

      Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
      HGT1S7N60B3S

      Mfr.#: HGT1S7N60B3S

      OMO.#: OMO-HGT1S7N60B3S-1190

      신규 및 오리지널
      HGT1S7N60C3D

      Mfr.#: HGT1S7N60C3D

      OMO.#: OMO-HGT1S7N60C3D-1190

      IGBT Transistors Optocoupler Phototransisto
      유효성
      재고:
      Available
      주문 시:
      2500
      수량 입력:
      HGT1S7N60C3DS9A의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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