MRF6V2150NBR1

Mfr. #:: MRF6V2150NBR1
제조사:: NXP / Freescale
설명:: RF MOSFET Transistors VHV6 150W
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: MRF6V2150NBR1 데이터 시트
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추가 정보:: MRF6V2150NBR1 추가 정보

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: E

트랜지스터 극성:: N-채널

기술:: 시

Vds - 드레인 소스 항복 전압:: 110 V

얻다:: 25 dB

출력 파워:: 150 W

최소 작동 온도:: - 65 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: TO-272-4

포장:: 릴

구성:: 단일 이중 드레인 이중 게이트

키:: 2.64 mm

길이:: 23.67 mm

동작 주파수:: 220 MHz

시리즈:: MRF6V2150N

유형:: RF 전력 MOSFET

너비:: 9.07 mm

상표:: NXP / 프리스케일

채널 모드:: 상승

습기에 민감한:: 네

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 500

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 0.5 V, 12 V

Vgs th - 게이트 소스 임계 전압:: 1.62 V

부품 번호 별칭:: 935316841528

단위 무게:: 0.067412 oz

Tags: MRF6V2150NBR, MRF6V2150NB, MRF6V2150N, MRF6V21, MRF6V2, MRF6V, MRF6, MRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

MRF6V2150NBR1 평가 및 리뷰

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SUPER

2019-03-31

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Order not dotarło

2019-02-24

MRF6V2150NBR1 설명

***W: RF Power Transistor,10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1735

*** Semiconductors SCT: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-450 MHz, 150 W, 50 V, FM4F

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.62V; Package/Case:TO-272 ;RoHS Compliant: Yes

***nell: TRANSISTOR, RF, 110V, TO-272; Drain Source Voltage Vds: 110V; Continuous Drain Current Id: -; Power Dissipation Pd: 150W; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-272; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

***escale Semiconductor: Lateral N-Channel Single-Ended Broadband RF Power MOSFET, 10-600 MHz, 300 W, 50 V

***et: Power LDMOS Transistor N-Channel 110V 5-Pin TO-270 WB EP T/R

***ical: Trans RF MOSFET N-CH 110V 5-Pin TO-270 W T/R

***or: RF ULTRA HIGH FREQUENCY BAND, N-

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:2.5mA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.63V; Package/Case:4-TO-270 ;RoHS Compliant: Yes

***W: RF Power Transistor,10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***nell: TRANSISTOR, RF, 110V, TO-270-2; Drain Source Voltage Vds: 110VDC; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 10MHz; Operating Frequency Max: 450MHz; RF Transistor Case: TO-270; No. of Pins: 2Pins; Operating Temperature Max: 225°C; Product Range: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)

*** Semiconductors SCT: Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F

***et: Transistor RF FET N-CH 110V 10MHz to 450MHz 2-Pin TO-272 T/R

*** Electronic Components: RF MOSFET Transistors VHV6 10W TO272-2N

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:110V; Continuous Drain Current, Id:50µA; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.68V; Package/Case:TO-272 ;RoHS Compliant: Yes

***(Formerly Allied Electronics): IRLL110TRPBF N-channel MOSFET Transistor; 1.5 A; 100 V; 3 + Tab-Pin SOT-223

***eco: Trans MOSFET N Channel 100 Volt 1.5A 4-Pin (3+Tab) SOT-223 Tape and Reel

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223-3

*** Source Electronics: Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.5A SOT223

***nsix Microsemi: Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

***hard Electronics: Mosfet; Power; N-ch; Vdss 100V; Rds(on) 0.54 Ohm; Id 4.3A; TO-252AA; Pd 25W; Vgs +/-10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: N Channel Mosfet, 100V, 4.3A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

***ment14 APAC: MOSFET, N, 100V, 4.3A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):540mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:25W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.3A; Junction to Case Thermal Resistance A:5°C/W; On State resistance @ Vgs = 10V:540mohm; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:17A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V; Voltage Vgs th Max:2V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - TO-252

***ical: Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK T/R

***ment14 APAC: MOSFET, N-CH, 100V, 4.3A, TO-252AA

*** Services: CoC and 2-years warranty / RFQ for pricing

***S: French Electronic Distributor since 1988

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:4.3A; On Resistance Rds(On):0.54Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Product Range:- Rohs Compliant: No

MRF6V2150NBR1 추가 정보

MRF6Vx Lateral N-Ch Broadband RF Power MOSFETs: NXP's MRF6Vx Lateral N-Channel Broadband RF Power MOSFETs are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz. They can be used single-ended or in a push-pull configuration and are suitable for linear applications with appropriate biasing. These RF MOSFETs are capable of handling a load mismatch of 65:1 VSWR, a 50 VDC, 230 MHz at all phase angles.Learn More

Market price

부분 #	제조	설명	재고	가격
MRF6V2150NBR1 DISTI # 24346163	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	720	2:$63.2500
MRF6V2150NBR1 DISTI # 30289379	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 W T/R RoHS: Compliant	60	2:$63.2500
MRF6V2150NBR1 DISTI # MRF6V2150NBR1CT-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1035In Stock	100:$52.5772 10:$58.6290 1:$62.4100
MRF6V2150NBR1 DISTI # MRF6V2150NBR1DKR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1035In Stock	100:$52.5772 10:$58.6290 1:$62.4100
MRF6V2150NBR1 DISTI # MRF6V2150NBR1TR-ND	NXP Semiconductors	FET RF 110V 220MHZ TO-272-4 RoHS: Compliant Min Qty: 500 Container: Tape & Reel (TR)	1000In Stock	500:$48.8424
MRF6V2150NBR1 DISTI # C1S233100141647	NXP Semiconductors	Trans RF MOSFET N-CH 110V 5-Pin TO-272 WB EP T/R RoHS: Compliant	720	50:$61.2000 25:$61.9000 10:$62.5000 5:$71.8000 1:$87.0000
MRF6V2150NBR1 DISTI # MRF6V2150NBR1	Avnet, Inc.	Trans MOSFET N-CH 110V 5-Pin TO-272 WB EP T/R - Tape and Reel (Alt: MRF6V2150NBR1) RoHS: Compliant Min Qty: 500 Container: Reel	Americas - 0	500:$53.4900 1000:$51.3900 2000:$49.3900 3000:$47.5900 5000:$46.6900
MRF6V2150NBR1 DISTI # 45AC7382	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272,Drain Source Voltage Vds:110V,Continuous Drain Current Id:-,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272,No. of Pins:4Pins,RoHS Compliant: Yes	386	1:$60.9600 10:$57.6900 25:$54.7500 50:$52.9200 100:$48.5600 250:$47.1200 500:$45.6500
MRF6V2150NBR1 DISTI # 47M2187	NXP Semiconductors	RF MOSFET, N CHANNEL, 110V, TO-272, FULL REEL,Drain Source Voltage Vds:110V,Continuous Drain Current Id:2.5mA,Power Dissipation Pd:150W,Operating Frequency Min:10MHz,Operating Frequency Max:450MHz,RF Transistor Case:TO-272 RoHS Compliant: Yes	0	1:$73.4500
MRF6V2150NBR1 DISTI # 841-MRF6V2150NBR1	NXP Semiconductors	RF MOSFET Transistors VHV6 150W RoHS: Compliant	0	500:$47.3800
MRF6V2150NBR5 DISTI # 841-MRF6V2150NBR5	NXP Semiconductors	RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET RoHS: Compliant	0
MRF6V2150NBR1 DISTI # MRF6V2150NBR1	NXP Semiconductors	RF POWER TRANSISTOR RoHS: Compliant	2298	1:$63.2100 10:$58.4200 25:$56.7100
MRF6V2150NBR1 DISTI # 2820249	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272 RoHS: Compliant	386	1:£49.8000 5:£48.2900 10:£46.7800 50:£41.9500
MRF6V2150NBR1 DISTI # 2820249	NXP Semiconductors	TRANSISTOR, RF, 110V, TO-272 RoHS: Compliant	386	1:$87.7600 5:$84.8300 10:$80.7900 50:$78.3100

영상	부분 #	설명
	Mfr.#: MRF6V2010GNR1 OMO.#: OMO-MRF6V2010GNR1	RF MOSFET Transistors VHV6 10W TO270-2GN
	Mfr.#: MRF6V2150NBR1 OMO.#: OMO-MRF6V2150NBR1	RF MOSFET Transistors VHV6 150W
	Mfr.#: MRF6V2300NBR1 OMO.#: OMO-MRF6V2300NBR1	RF MOSFET Transistors VHV6 300W TO272WB4N
	Mfr.#: MRF6V2150NBR5 OMO.#: OMO-MRF6V2150NBR5	RF MOSFET Transistors VHV6 150W Latrl N-Ch SE Broadband MOSFET
	Mfr.#: MRF6V2010NBR1 OMO.#: OMO-MRF6V2010NBR1	RF MOSFET Transistors VHV6 10W TO272-2N
	Mfr.#: MRF6V2300NBR5 OMO.#: OMO-MRF6V2300NBR5	RF MOSFET Transistors VHV6 300W Latrl N-Ch SE Broadband MOSFET
	Mfr.#: MRF6V2010NB OMO.#: OMO-MRF6V2010NB-1190	신규 및 오리지널
	Mfr.#: MRF6V2010NBR1 OMO.#: OMO-MRF6V2010NBR1-NXP-SEMICONDUCTORS	FET RF 110V 220MHZ TO272-2
	Mfr.#: MRF6V2300NR1 OMO.#: OMO-MRF6V2300NR1-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 300W TO270WB4N
	Mfr.#: MRF6V2150NR1 OMO.#: OMO-MRF6V2150NR1-NXP-SEMICONDUCTORS	RF MOSFET Transistors VHV6 150W

MRF6V2150NBR1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

L***v

K***S

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes