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| PartNumber | MRF6V2150NBR1 | MRF6V2150NB | MRF6V2150NBR |
| Description | RF MOSFET Transistors VHV6 150W | ||
| Manufacturer | NXP | - | FSL |
| Product Category | RF MOSFET Transistors | - | Module |
| RoHS | E | - | - |
| Transistor Polarity | N-Channel | - | N-Channel |
| Technology | Si | - | Si |
| Vds Drain Source Breakdown Voltage | 110 V | - | - |
| Gain | 25 dB | - | 25 dB |
| Output Power | 150 W | - | 150 W |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | TO-272-4 | - | - |
| Packaging | Reel | - | Reel |
| Configuration | Single Dual Drain Dual Gate | - | - |
| Height | 2.64 mm | - | - |
| Length | 23.67 mm | - | - |
| Operating Frequency | 220 MHz | - | 220 MHz |
| Series | MRF6V2150N | - | MRF6V2150N |
| Type | RF Power MOSFET | - | RF Power MOSFET |
| Width | 9.07 mm | - | - |
| Brand | NXP / Freescale | - | - |
| Channel Mode | Enhancement | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | - 0.5 V, 12 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.62 V | - | - |
| Part # Aliases | 935316841528 | - | - |
| Unit Weight | 0.067412 oz | - | 0.067412 oz |
| Package Case | - | - | TO-272 WB EP |
| Vgs Gate Source Voltage | - | - | - 0.5 V 12 V |
| Vds Drain Source Breakdown Voltage | - | - | 110 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.62 V |