BFP640FH6327XTSA1

Mfr. #:: BFP640FH6327XTSA1
제조사:: Infineon Technologies
설명:: RF Bipolar Transistors RF BIP TRANSISTOR
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BFP640FH6327XTSA1 데이터 시트
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HTML Datasheet:: BFP640FH6327XTSA1 Datasheet BFP640FH6327XTSA1 Datasheet (P4-P6)BFP640FH6327XTSA1 Datasheet (P7-P9)BFP640FH6327XTSA1 Datasheet (P10)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: RF 양극성 트랜지스터

RoHS:: Y

시리즈:: BFP640

기술:: 시

패키지/케이스:: TSFP-4

포장:: 릴

상표:: 인피니언 테크놀로지스

상품 유형:: RF 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 640F BFP BFP64FH6327XT H6327 SP000750404

Tags: BFP640FH6, BFP640FH, BFP640F, BFP64, BFP6, BFP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFP640FH6327XTSA1 설명

***ca Corp: RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN

***ow.cn: Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin TSFP T/R

***ineon SCT: NPN Silicon Germanium RF Transistor, TSFP-4-1, RoHS

***nell: RF TRANSISTOR, NPN, 4.1V, 42GHZ, TSFP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4.1V; Transition Frequency ft: 42GHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 110hFE; RF Transistor Case: TSFP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: NPN Silicon Germanium RF Transistor | Summary of Features: High gain low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Ideal for CDMA and WLAN applications; Outstanding noise figure F = 0.65 dB at 1.8 GHz ,Outstanding noise figure F = 1.2 dB at 6 GHz; High maximum stable gain:Gms = 23 dB at 1.8 GHz; Gold metallization for extra high reliability; 70 GHz fT-Silicon Germanium technology; Pb-free (RoHS compliant) package1); Qualified according AEC Q101

***ca Corp: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***ure Electronics: DTC114EKA Series 50 V 100 mA Surface Mount PNP Digital Transistor - SC-59

***ical: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SMT T/R

***ment14 APAC: Transistor, DIGITAL, SC-59, 100MA, NPN; Digital Transistor Polarity:Single Collector Emitter Voltage V(br)ceo:50V; Continuous Current

***ark: Transistor Polarity:single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; Base Emitter Resistor R2:10Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes

***nell: TRANSISTOR, DIGITAL, SC-59, 100MA, NPN; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SC-59; No. of Pins: 3 Pin; Product Range: DTC114E Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: 100mA; DC Collector Current: 100mA; DC Current Gain hFE: 30hFE; Gain Bandwidth ft Typ: 250MHz; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 200mW; Termination Type: Surface Mount Device; Transistor Case Style: SC-59; Transistor Polarity: NPN; Transistor Type: Bias Resistor (BRT); Transition Frequency ft: 250MHz

***ure Electronics: Bipolar Transistors - BJT NPN 120V 50MA

***ical: Trans GP BJT NPN 120V 0.05A 3-Pin SMT T/R

***nell: TRANS, NPN, 120V, 0.05A, 150DEG C, 0.2W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 120V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 200mW; DC Collector Current: 50mA; DC Current Gain hFE: 180hFE; Transistor Case Style: SOT-346; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ical: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SMT T/R

***ure Electronics: DTC124XKA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-59

***nell: TRANSISTOR DIGITAL SC-59 100MA NPN; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 22kohm; Base-Emitter Resistor R2: 47kohm;

***ark: TRANSISTOR DIGITAL SC-59 100MA NPN; Transistor Type:General Purpose; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:100mA; Power Dissipation:200mW; Min Hfe:68; ft, Typ:250MHz; Case ;RoHS Compliant: Yes

Market price

부분 #	제조	설명	재고	가격
BFP640FH6327XTSA1 DISTI # V72:2272_06384771	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R RoHS: Compliant	3000	3000:$0.1441 1000:$0.1584 500:$0.1985 250:$0.2025 100:$0.2031 25:$0.2949 10:$0.2964 1:$0.3410
BFP640FH6327XTSA1 DISTI # BFP640FH6327XTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 4.5V 40GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1680In Stock	1000:$0.1830 500:$0.2368 100:$0.3014 10:$0.4040 1:$0.4700
BFP640FH6327XTSA1 DISTI # BFP640FH6327XTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 4.5V 40GHZ 4TSFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1680In Stock	1000:$0.1830 500:$0.2368 100:$0.3014 10:$0.4040 1:$0.4700
BFP640FH6327XTSA1 DISTI # BFP640FH6327XTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 4.5V 40GHZ 4TSFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	75000:$0.1306 30000:$0.1338 15000:$0.1411 6000:$0.1515 3000:$0.1620
BFP640FH6327XTSA1 DISTI # 27103990	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A Automotive 4-Pin TSFP T/R RoHS: Compliant	3000	3000:$0.1441 1000:$0.1584 500:$0.1985 250:$0.2025 100:$0.2031 48:$0.2949
BFP640FH6327XTSA1 DISTI # BFP640FH6327XTSA1	Infineon Technologies AG	Trans GP BJT NPN 4V 0.05A 4-Pin TSFP T/R - Tape and Reel (Alt: BFP640FH6327XTSA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1499 6000:$0.1449 12000:$0.1389 18000:$0.1349 30000:$0.1319
BFP640FH6327XTSA1 DISTI # 13AC8240	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.1V, 42GHZ, TSFP,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:4.1V,Transition Frequency ft:42GHz,Power Dissipation Pd:200mW,DC Collector Current:50mA,DC Current Gain hFE:110hFE,RF Transistor RoHS Compliant: Yes	1620	1:$0.4600 10:$0.3780 25:$0.3290 50:$0.2790 100:$0.2300 250:$0.2130 500:$0.1950 1000:$0.1780
BFP640FH6327XTSA1 DISTI # 726-BFP640FH6327XTSA	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	5691	1:$0.4600 10:$0.3780 100:$0.2300 1000:$0.1780 3000:$0.1520
BFP 640F H6327 DISTI # 726-BFP640FH6327	Infineon Technologies AG	RF Bipolar Transistors RF BIP TRANSISTOR RoHS: Compliant	946	1:$0.4600 10:$0.3780 100:$0.2300 1000:$0.1780 3000:$0.1520
BFP640FH6327XTSA1 DISTI # 2726100	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.1V, 42GHZ, TSFP RoHS: Compliant	1790	5:£0.3250 25:£0.3090 100:£0.1740 250:£0.1540 500:£0.1350
BFP640FH6327XTSA1 DISTI # 2726100	Infineon Technologies AG	RF TRANSISTOR, NPN, 4.1V, 42GHZ, TSFP RoHS: Compliant	1720	1:$0.7280 10:$0.5990 100:$0.3650 1000:$0.2820 3000:$0.2410 9000:$0.2350
BFP640FH6327XTSA1 DISTI # C1S322000560538	Infineon Technologies AG	Trans RF BJT NPN 4.1V 0.05A 200mW Automotive 4-Pin TSFP T/R RoHS: Compliant	3000	250:$0.2025 100:$0.2031 25:$0.2949 10:$0.2964

관련 상품

영상	부분 #	설명
	Mfr.#: OPA855IDSGR OMO.#: OMO-OPA855IDSGR	High Speed Operational Amplifiers TRANSIMPEDANCE OP AMP
	Mfr.#: KDZLVTFTR75 OMO.#: OMO-KDZLVTFTR75	Zener Diodes 70-79Vz(V) 2Iz(mA) AEC-Q101 Qualified
	Mfr.#: ES1D OMO.#: OMO-ES1D	Rectifiers 1.0a Rectifier UF Recovery
	Mfr.#: BFP540H6327XTSA1 OMO.#: OMO-BFP540H6327XTSA1	RF Bipolar Transistors RF BIP TRANSISTOR
	Mfr.#: LT8335EDDB#TRMPBF OMO.#: OMO-LT8335EDDB-TRMPBF	Switching Voltage Regulators L IQ Boost/SEPIC/ Inv Conv w/ 2A, 28V Sw
	Mfr.#: 2305018-2 OMO.#: OMO-2305018-2	USB Connectors USB TYPE C, REC IPX8 ON BOARD DUAL SMT
	Mfr.#: ES1D OMO.#: OMO-ES1D-ON-SEMICONDUCTOR	DIODE GEN PURP 200V 1A SMA
	Mfr.#: C1210F224K2RACTU OMO.#: OMO-C1210F224K2RACTU-1190	CAP, 0.22UF, 200V, MLCC, 1210
	Mfr.#: 2305018-2 OMO.#: OMO-2305018-2-TE-CONNECTIVITY	CONN RCP USB3.1 TYPEC 24P SMD RA
	Mfr.#: OPA855IDSGR OMO.#: OMO-OPA855IDSGR-TEXAS-INSTRUMENTS	LINEAR OPERATIONAL (OP) AMP

유효성

재고:: Available
주문 시:: 1989
수량 입력:

BFP640FH6327XTSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.45~~; ~~US$0.45~~

10: ~~US$0.38~~; ~~US$3.78~~

100: ~~US$0.23~~; ~~US$23.00~~

1000: ~~US$0.18~~; ~~US$178.00~~

시작

BFP640FH6 4
BFP640FH 5
BFP640F 14
BFP64 45
BFP6 107
BFP 692

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BFP640FH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes