 |  | | |
| PartNumber | BFP640FH6327XTSA1 | BFP640FH | BFP640FH6327 |
| Description | RF Bipolar Transistors RF BIP TRANSISTOR | Trans GP BJT NPN 4V 0.05A 4-Pin TSFP T/R | |
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | RF Bipolar Transistors | Transistors - Bipolar (BJT) - RF | - |
| RoHS | Y | - | - |
| Series | BFP640 | BFP640 | - |
| Technology | Si | - | - |
| Package / Case | TSFP-4 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Brand | Infineon Technologies | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | 640F BFP BFP64FH6327XT H6327 SP000750404 | - | - |
| Part Aliases | - | 640F BFP BFP640FH6327XT H6327 SP000750404 | - |
| Package Case | - | 4-SMD, Flat Leads | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 4-TSFP | - |
| Power Max | - | 200mW | - |
| Transistor Type | - | NPN | - |
| Current Collector Ic Max | - | 50mA | - |
| Voltage Collector Emitter Breakdown Max | - | 4.5V | - |
| DC Current Gain hFE Min Ic Vce | - | 110 @ 30mA, 3V | - |
| Frequency Transition | - | 40GHz | - |
| Noise Figure dB Typ f | - | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz | - |
| Gain | - | 23dB | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BFP640FH6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTOR | |
| BFP640FH | 신규 및 오리지널 | ||
| BFP640FH6327 | Trans GP BJT NPN 4V 0.05A 4-Pin TSFP T/R | ||
| BFP640FH6327XTSA1 | RF Bipolar Transistors RF BIP TRANSISTOR |