CGH55015F2

Mfr. #:: CGH55015F2
제조사:: N/A
설명:: RF JFET Transistors 4.5-6GHz 13Watt GaN Sm. Sig. Gain 12dB
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGH55015F2 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: CGH55015F2 추가 정보

제품 속성
속성 값

제조사: 울프스피드 / 크리어

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 쟁반

장착 스타일: 나사

작동 온도 범위: -

패키지 케이스: 440166

기술: GaN SiC

구성: 하나의

트랜지스터형: 헴트

얻다: 12 dB

등급: -

출력 파워: 10 W

Pd 전력 손실: -

최대 작동 온도: + 150 C

최소 작동 온도: - 40 C

애플리케이션: -

동작 주파수: 4.5 GHz to 6 GHz

Id-연속-드레인-전류: 1.5 A

Vds-드레인-소스-고장-전압: 120 V

Vgs-th-Gate-Source-Threshold-Voltage: - 3 V

Rds-On-Drain-Source-Resistance: -

트랜지스터 극성: N-채널

순방향 트랜스컨덕턴스-최소: -

Vgs-Gate-Source-Breakdown-Voltage: - 10 V to + 2 V

게이트 소스 차단 전압: -

최대 드레인 게이트 전압: -

NF-노이즈-피겨: -

P1dB-압축점: -

Tags: CGH55015F2, CGH55015, CGH5501, CGH55, CGH5, CGH

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGH55015F2 설명

***i-Key: RF MOSFET HEMT 28V 440166

***hardson RFPD: RF POWER TRANSISTOR

CGH55015F2 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

부분 #	제조	설명	재고	가격
CGH55015F2 DISTI # CGH55015F2-ND	Wolfspeed	RF MOSFET HEMT 28V 440166 RoHS: Compliant Min Qty: 1 Container: Tray	133In Stock	1:$68.0200
CGH55015F2 DISTI # 941-CGH55015F2	Cree, Inc.	RF JFET Transistors GaN HEMT 4.5-6.0GHz, 10 Watt RoHS: Compliant	93	1:$68.0200 10:$64.3500 25:$62.5200 50:$61.6000 100:$61.1400
CGH55015F2 DISTI # CGH55015F2	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	60	1:$68.0200

관련 상품

영상	부분 #	설명
	Mfr.#: CGH55015F1 OMO.#: OMO-CGH55015F1	RF JFET Transistors GaN HEMT 5.5-5.8GHz, 15 Watt
	Mfr.#: CGH55030F1 OMO.#: OMO-CGH55030F1	RF JFET Transistors GaN HEMT 5.5-5.8GHz, 30 Watt
	Mfr.#: CGH55030F2 OMO.#: OMO-CGH55030F2	RF JFET Transistors GaN HEMT 4.5-6.0GHz, 25 Watt
	Mfr.#: CGH55015F1/P1 OMO.#: OMO-CGH55015F1-P1-1190	신규 및 오리지널
	Mfr.#: CGH55015F2/P1 OMO.#: OMO-CGH55015F2-P1-1190	신규 및 오리지널
	Mfr.#: CGH55030F2/P1 OMO.#: OMO-CGH55030F2-P1-1190	신규 및 오리지널
	Mfr.#: CGH55030F2/P2 OMO.#: OMO-CGH55030F2-P2-1190	신규 및 오리지널
	Mfr.#: CGH5506194FLF OMO.#: OMO-CGH5506194FLF-1190	Thick Film Resistors - Through Hole
	Mfr.#: CGH55015F2 OMO.#: OMO-CGH55015F2-WOLFSPEED	RF JFET Transistors 4.5-6GHz 13Watt GaN Sm. Sig. Gain 12dB
	Mfr.#: CGH55030F1 OMO.#: OMO-CGH55030F1-WOLFSPEED	RF MOSFET HEMT 28V 440166