STK800

Mfr. #:: STK800
제조사:: STMicroelectronics
설명:: MOSFET Power MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: STK800 데이터 시트
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추가 정보:: STK800 추가 정보 STK800 Product Details

제품 속성
속성 값

제조사:: ST마이크로일렉트로닉스

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PolarPAK-10

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 20 A

Rds On - 드레인 소스 저항:: 7.8 mOhms

Vgs - 게이트 소스 전압:: 16 V

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 5.2 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 0.8 mm

길이:: 6.15 mm

시리즈:: STK800

트랜지스터 유형:: 1 N-Channel

유형:: 파워 MOSFET

너비:: 5.16 mm

상표:: ST마이크로일렉트로닉스

순방향 트랜스컨덕턴스 - 최소:: 44 S

가을 시간:: 15 ns

상품 유형:: MOSFET

상승 시간:: 50 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 45 ns

일반적인 켜기 지연 시간:: 15 ns

Tags: STK80, STK8, STK

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STK800 설명

***et Europe: Trans MOSFET N-CH 30V 20A 10-Pin PolarPAK T/R

***icroelectronics: N-channel 30V - 0.006Ohm - 20A - PolarPAK®

***ca Corp: Power Field-Effect Transistor, 20A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ser: Power MOSFET Transistors Power MOSFET

***nell: MOSFET, N CH, 30V, 20A, POLARPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 5.2W; Transistor Case Style: PolarPAK; No. of Pins: -; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes

***ment14 APAC: MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V

***Yang: Transistor MOSFET Array Dual N-CH 30V 30A/40A 8-Pin Power 56 T/R - Tape and Reel

***ark: MOSFET Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V ;RoHS Compliant: Yes

***rchild Semiconductor: This device includes two specialized N-Channel MOSFETs in a dua- MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

***ment14 APAC: MOSFET,NN CH,30V,POWER56; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.0019ohm; Power Dissipation Pd:2.5W

***ure Electronics: N-Channle 30 V 22 A 10 mohm Surface Mount PowerTrench Mosfet - Power 56

***emi: N-Channel PowerTrench® MOSFET 30V, 22A, 10mΩ

*** Stop Electro: Power Field-Effect Transistor, 13.5A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***nell: MOSFET, N CH, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:29W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

***ure Electronics: Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ical: Trans MOSFET N-CH 30V 16A 8-Pin PQFN EP T/R

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***emi: N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 30V, 40A, 6.25mΩ

***r Electronics: Power Field-Effect Transistor, 17A I(D), 30V, 0.00625ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA

***nell: MOSFET, N CH, 30V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode

***et Japan: Transistor MOSFET Array Dual N-CH 30V 25A 8-Pin PowerPAK SO T/R

***ment14 APAC: MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:25A; Source Voltage Vds:30V; On

***nell: MOSFET, DUAL N-CH, 30V, 25A, POWERPAK SO; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 25A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0076ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 22W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

Market price

부분 #	제조	설명	재고	가격
STK800 DISTI # 497-5123-1-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	20In Stock	10:$2.5590 1:$2.8500
STK800 DISTI # 497-5123-6-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	20In Stock	10:$2.5590 1:$2.8500
STK800 DISTI # 497-5123-2-ND	STMicroelectronics	MOSFET N-CH 30V 20A POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
STK800 DISTI # 511-STK800	STMicroelectronics	MOSFET Power MOSFET RoHS: Compliant	0
STK800	STMicroelectronics	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	496	447:$0.4000 79:$0.4480 1:$1.2800
STK800	Vishay Semiconductors	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	2400	1251:$0.5600 251:$0.6400 1:$1.6000
STK800	STMicroelectronics	20 A, 30 V, 0.0098 ohm, N-CHANNEL, Si, POWER, MOSFET	33	7:$3.0000 3:$4.0000 1:$6.0000
STK800	STMicroelectronics		3191
STK800	STMicroelectronics		42	2:$4.4800 7:$2.9120 19:$2.2400
STK800 DISTI # 1752106	STMicroelectronics	MOSFET, N CH, 30V, 20A, POLARPAK RoHS: Compliant	0	10:$3.8600 1:$4.2900

영상	부분 #	설명
	Mfr.#: STK531U394C-E OMO.#: OMO-STK531U394C-E	Inverters INVERTER
	Mfr.#: STK760-700-E OMO.#: OMO-STK760-700-E	Motor / Motion / Ignition Controllers & Drivers PFC HIC
	Mfr.#: STK14C88B-NF35U OMO.#: OMO-STK14C88B-NF35U	NVRAM
	Mfr.#: STK0460P OMO.#: OMO-STK0460P-1190	신규 및 오리지널
	Mfr.#: STK3310-28 OMO.#: OMO-STK3310-28-1190	신규 및 오리지널
	Mfr.#: STK3311-X OMO.#: OMO-STK3311-X-1190	신규 및 오리지널
	Mfr.#: STK499-240 OMO.#: OMO-STK499-240-1190	신규 및 오리지널
	Mfr.#: STK65041MK3-H OMO.#: OMO-STK65041MK3-H-1190	신규 및 오리지널
	Mfr.#: STK762-71F OMO.#: OMO-STK762-71F-1190	신규 및 오리지널
	Mfr.#: STK672-060-E OMO.#: OMO-STK672-060-E-ON-SEMICONDUCTOR	Motor / Motion / Ignition Controllers & Drivers Unipoler 2PhaseMicro SteppingMotor Drive

STK800

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes