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IGO60R070D1AUMA1

IGO60R070D1AUMA1
Mfr. #:
IGO60R070D1AUMA1
제조사:
Infineon Technologies
설명:
IC GAN FET 600V 60A 20DSO
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IGO60R070D1AUMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
IGO60R070D1AUMA1 추가 정보
제품 속성
속성 값
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
부분 # 제조 설명 재고 가격
IGO60R070D1AUMA1
DISTI # V72:2272_22710690		Infineon Technologies AGIGO60R070D1AUMA10
    IGO60R070D1AUMA1
    DISTI # V36:1790_22710690    		Infineon Technologies AGIGO60R070D1AUMA10
    • 400000:$13.6900
    • 80000:$14.6300
    • 8000:$16.6600
    • 800:$17.0200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1CT-ND    		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1DKR-ND    		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1TR-ND    		Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 800:$17.0240
    IGO60R070D1AUMA1
    DISTI # SP001300362    		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R (Alt: SP001300362)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 100
    • 8000:€13.6900
    • 4800:€14.2900
    • 3200:€15.0900
    • 1600:€15.2900
    • 800:€15.6900
    IGO60R070D1AUMA1/SAMPLE
    DISTI # IGO60R070D1AUMA1/SAMPLE    		Infineon Technologies AGTransistor MOSFET Enhancement Mode 600V 20-Pin DSO - Trays (Alt: IGO60R070D1AUMA1/SAMPLE)
    RoHS: Compliant
    Min Qty: 800
    Container: Tray    		Americas - 5
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1      		Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGO60R070D1AUMA1)
      RoHS: Compliant
      Min Qty: 800
      Container: Reel      		Americas - 0
      • 8000:$14.8900
      • 4800:$15.0900
      • 3200:$15.6900
      • 1600:$16.2900
      • 800:$16.8900
      IGO60R070D1AUMA1
      DISTI # 84AC1770      		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes974
      • 500:$16.3800
      • 250:$17.2100
      • 100:$18.0400
      • 50:$19.1100
      • 25:$20.1800
      • 10:$21.1300
      • 1:$22.9100
      IGO60R070D1AUMA1
      DISTI # 726-IGO60R070D1AUMA1      		Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
      RoHS: Compliant      		0
      • 1:$22.6800
      • 5:$22.4400
      • 10:$20.9200
      • 25:$19.9800
      • 100:$17.8600
      • 250:$17.0400
      • 500:$16.2200
      • 800:$14.1000
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1      		Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W5
      • 10:$22.5500
      • 3:$25.5900
      • 1:$28.4100
      IGO60R070D1AUMA1
      DISTI # 2981531      		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
      RoHS: Compliant      		974
      • 800:$23.5100
      • 500:$26.0500
      • 100:$26.9300
      • 50:$29.3700
      • 1:$32.3000
      • 10:$32.3000
      IGO60R070D1AUMA1
      DISTI # 2981531      		Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W954
      • 100:£13.0800
      • 50:£13.8600
      • 10:£14.6300
      • 5:£16.4300
      • 1:£16.6000
      영상 부분 # 설명
      IGO60R070D1AUMA1

      Mfr.#: IGO60R070D1AUMA1

      OMO.#: OMO-IGO60R070D1AUMA1

      		 MOSFET 600V CoolGaN Power Transistor
      IGO60R070D1AUMA1

      Mfr.#: IGO60R070D1AUMA1

      OMO.#: OMO-IGO60R070D1AUMA1-INFINEON-TECHNOLOGIES

      		 IC GAN FET 600V 60A 20DSO
      유효성
      재고:
      Available
      주문 시:
      5500
      수량 입력:
      IGO60R070D1AUMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$20.54
      US$20.54
      10
      US$19.51
      US$195.08
      100
      US$18.48
      US$1 848.15
      500
      US$17.45
      US$8 727.40
      1000
      US$16.43
      US$16 428.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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