IGO60R070D1AUMA1

IGO60R070D1AUMA1
Mfr. #:
IGO60R070D1AUMA1
제조사:
Infineon Technologies
설명:
MOSFET 600V CoolGaN Power Transistor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IGO60R070D1AUMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IGO60R070D1AUMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
GaN
장착 스타일:
SMD/SMT
패키지/케이스:
PG-DSO-20
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
31 A
Rds On - 드레인 소스 저항:
70 mOhms
Vgs th - 게이트 소스 임계 전압:
0.9 V
Vgs - 게이트 소스 전압:
10 V
Qg - 게이트 차지:
5.8 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
125 W
구성:
하나의
채널 모드:
상승
상표명:
CoolGaN
포장:
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
10 ns
습기에 민감한:
상품 유형:
MOSFET
상승 시간:
7 ns
공장 팩 수량:
800
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
11 ns
일반적인 켜기 지연 시간:
13 ns
부품 번호 별칭:
SP001300362
Tags
IGO
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolGaN™ Gallium Nitride HEMTs
Infineon CoolGaN™ Gallium Nitride HEMTs offer excellent advantages including ultimate efficiency, reliability, power density, and highest quality over silicon. CoolGaN transistors are built with the most reliable technology, designed for the highest efficiency and power density in switch mode power supplies. The devices work similar to conventional silicon MOSFETs with enhancement mode gate drive bias using a p-GaN gate structure.
부분 # 제조 설명 재고 가격
IGO60R070D1AUMA1
DISTI # V72:2272_22710690
Infineon Technologies AGIGO60R070D1AUMA10
    IGO60R070D1AUMA1
    DISTI # V36:1790_22710690
    Infineon Technologies AGIGO60R070D1AUMA10
    • 400000:$13.6900
    • 80000:$14.6300
    • 8000:$16.6600
    • 800:$17.0200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1CT-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1DKR-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    716In Stock
    • 100:$19.3136
    • 10:$22.6170
    • 1:$24.5200
    IGO60R070D1AUMA1
    DISTI # IGO60R070D1AUMA1TR-ND
    Infineon Technologies AGIC GAN FET 600V 60A 20DSO
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 800:$17.0240
    IGO60R070D1AUMA1
    DISTI # SP001300362
    Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R (Alt: SP001300362)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 100
    • 8000:€13.6900
    • 4800:€14.2900
    • 3200:€15.0900
    • 1600:€15.2900
    • 800:€15.6900
    IGO60R070D1AUMA1/SAMPLE
    DISTI # IGO60R070D1AUMA1/SAMPLE
    Infineon Technologies AGTransistor MOSFET Enhancement Mode 600V 20-Pin DSO - Trays (Alt: IGO60R070D1AUMA1/SAMPLE)
    RoHS: Compliant
    Min Qty: 800
    Container: Tray
    Americas - 5
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1
      Infineon Technologies AGTrans MOSFET N-CH 600V 31A 20-Pin PG-DSO T/R - Tape and Reel (Alt: IGO60R070D1AUMA1)
      RoHS: Compliant
      Min Qty: 800
      Container: Reel
      Americas - 0
      • 8000:$14.8900
      • 4800:$15.0900
      • 3200:$15.6900
      • 1600:$16.2900
      • 800:$16.8900
      IGO60R070D1AUMA1
      DISTI # 84AC1770
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:31A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.055ohm,Rds(on) Test Voltage Vgs:-,Threshold Voltage Vgs:1.2V,Power RoHS Compliant: Yes974
      • 500:$16.3800
      • 250:$17.2100
      • 100:$18.0400
      • 50:$19.1100
      • 25:$20.1800
      • 10:$21.1300
      • 1:$22.9100
      IGO60R070D1AUMA1
      DISTI # 726-IGO60R070D1AUMA1
      Infineon Technologies AGMOSFET 600V CoolGaN Power Transistor
      RoHS: Compliant
      0
      • 1:$22.6800
      • 5:$22.4400
      • 10:$20.9200
      • 25:$19.9800
      • 100:$17.8600
      • 250:$17.0400
      • 500:$16.2200
      • 800:$14.1000
      IGO60R070D1AUMA1
      DISTI # IGO60R070D1AUMA1
      Infineon Technologies AGTransistor: N-JFET,CoolGaN™,unipolar,600V,31A,Idm:60A,125W5
      • 10:$22.5500
      • 3:$25.5900
      • 1:$28.4100
      IGO60R070D1AUMA1
      DISTI # 2981531
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W
      RoHS: Compliant
      974
      • 800:$23.5100
      • 500:$26.0500
      • 100:$26.9300
      • 50:$29.3700
      • 1:$32.3000
      • 10:$32.3000
      IGO60R070D1AUMA1
      DISTI # 2981531
      Infineon Technologies AGMOSFET, N-CH, 600V, 31A, 150DEG C, 125W954
      • 100:£13.0800
      • 50:£13.8600
      • 10:£14.6300
      • 5:£16.4300
      • 1:£16.6000
      영상 부분 # 설명
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      Gate Drivers 5V, 7A/5A low side GaN driver with 60MHz/1ns speed 6-DSBGA -40 to 125
      LMG3410R070RWHT

      Mfr.#: LMG3410R070RWHT

      OMO.#: OMO-LMG3410R070RWHT-TEXAS-INSTRUMENTS

      PWR MGMT MOSFET/PWR DRIVER
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      Mfr.#: 1EDF5673FXUMA1

      OMO.#: OMO-1EDF5673FXUMA1-INFINEON-TECHNOLOGIES

      IC DRIVER IC GAN DSO-16-11
      1EDS5663HXUMA1

      Mfr.#: 1EDS5663HXUMA1

      OMO.#: OMO-1EDS5663HXUMA1-INFINEON-TECHNOLOGIES

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      LMG3411R070RWHT

      Mfr.#: LMG3411R070RWHT

      OMO.#: OMO-LMG3411R070RWHT-TEXAS-INSTRUMENTS

      600-V 70m GaN with integrated driver and cycle-by-cycle overcurrent protection
      IGOT60R070D1AUMA1

      Mfr.#: IGOT60R070D1AUMA1

      OMO.#: OMO-IGOT60R070D1AUMA1-INFINEON-TECHNOLOGIES

      IC GAN FET 600V 60A 20DSO
      유효성
      재고:
      703
      주문 시:
      2686
      수량 입력:
      IGO60R070D1AUMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$22.68
      US$22.68
      5
      US$22.44
      US$112.20
      10
      US$20.92
      US$209.20
      25
      US$19.98
      US$499.50
      100
      US$17.86
      US$1 786.00
      250
      US$17.04
      US$4 260.00
      500
      US$16.22
      US$8 110.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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