SI2315BDS-T1-E3

Mfr. #:: SI2315BDS-T1-E3
제조사:: Vishay / Siliconix
설명:: MOSFET 1.8V 3.2A 1.25W
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI2315BDS-T1-E3 데이터 시트
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HTML Datasheet:: SI2315BDS-T1-E3 Datasheet SI2315BDS-T1-E3 Datasheet (P4-P6)SI2315BDS-T1-E3 Datasheet (P7-P9)
ECAD Model:
추가 정보:: SI2315BDS-T1-E3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-23-3

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 12 V

Id - 연속 드레인 전류:: 3 A

Rds On - 드레인 소스 저항:: 50 mOhms

Vgs th - 게이트 소스 임계 전압:: 450 mV

Vgs - 게이트 소스 전압:: 4.5 V

Qg - 게이트 차지:: 8 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 0.75 W

구성:: 하나의

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

시리즈:: SI2

트랜지스터 유형:: 1 P-Channel

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 7 S

가을 시간:: 50 ns

상품 유형:: MOSFET

상승 시간:: 35 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 50 ns

일반적인 켜기 지연 시간:: 15 ns

부품 번호 별칭:: SI2315BDS-E3

단위 무게:: 0.000282 oz

Tags: SI2315BDS-T, SI2315B, SI2315, SI231, SI23, SI2

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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2315BDS-T1-E3 설명

***ure Electronics: Single P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23

***ied Electronics & Automation: MOSFET; Power; P-Channel; -12 V; 8 V; 3.5 A; 1.25 W; -55 to 150 degC

***ical: Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R

***et Europe: Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R

***i-Key: MOSFET P-CH 12V 3A SOT23-3

***ark: For New Designs Use Si2333Cds-T1-Ge3 Rohs Compliant: No

***ronik: P-CHANNEL-FET 3,85A 12V SOT23 RoHSconf

***Components: MOSFET P-Channel 12V 3A TO236

***ser: P-Channel MOSFETs 1.8V 3.2A 1.25W

***eco: P-CHANNEL 1.25-W, 1.8-V (G-S) MOSFE<AZ

***rt123: SOT-23 (TO-236)

*** Electronics: RoHsTRANSISTOR MOSF

***: 12V, 50 [email protected]

***ment14 APAC: MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.85A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-900mV; Power Dissipation Pd:770mW; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-3A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:8V; Voltage Vgs Rds on Measurement:-4.5V

***nell: MOSFET, P REEL 3K; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-12V; Current, Id Cont:3A; Resistance, Rds On:0.05ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:-0.9V; Case Style:SOT-23; Termination Type:SMD; Current, Id Max:3.0A; Current, Idm Pulse:12A; No. of Pins:3; Power Dissipation:0.75W; Power Output:0.75W; Power, Pd:0.75W; Power, Ptot:0.75W; Quantity, Reel:3000; Resistance, Rds on @ Vgs = 2.5V P Channel:0.065ohm; Resistance, Rds on @ Vgs = 4.5V P Channel:0.05ohm; Resistance, Rds on Max:0.05ohm; SMD Marking:M5; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Voltage, Rds Measurement:4.5V; Voltage, Vds:12V; Voltage, Vds Max:12V; Voltage, Vgs th Max:-0.9V; Voltage, Vgs th Min:-0.45V; Width, Tape:8mm

SI2315BDS-T1-E3 추가 정보

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

부분 #	제조	설명	재고	가격
SI2315BDS-T1-E3 DISTI # V72:2272_09216796	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R RoHS: Compliant	4686	3000:$0.2302 1000:$0.2370 500:$0.2439 250:$0.2507 100:$0.2785 25:$0.3685 10:$0.4093 1:$0.4808
SI2315BDS-T1-E3 DISTI # V36:1790_09216796	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000:$0.2318
SI2315BDS-T1-E3 DISTI # SI2315BDS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 3A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	155684In Stock	1000:$0.1695 500:$0.2194 100:$0.2792 10:$0.3740 1:$0.4400
SI2315BDS-T1-E3 DISTI # SI2315BDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 3A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	155684In Stock	1000:$0.1695 500:$0.2194 100:$0.2792 10:$0.3740 1:$0.4400
SI2315BDS-T1-E3 DISTI # SI2315BDS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 3A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	153000In Stock	75000:$0.1226 30000:$0.1239 15000:$0.1307 6000:$0.1404 3000:$0.1501
SI2315BDS-T1-E3 DISTI # 32370918	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R RoHS: Compliant	45000	3000:$0.1938
SI2315BDS-T1-E3 DISTI # 26962753	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R RoHS: Compliant	4686	27:$0.4808
SI2315BDS-T1-E3 DISTI # 24135652	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R RoHS: Compliant	1105	265:$0.2908
SI2315BDS-T1-E3 DISTI # SI2315BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2315BDS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 6000	30000:$0.1354 18000:$0.1391 12000:$0.1431 6000:$0.1492 3000:$0.1537
SI2315BDS-T1-E3 DISTI # SI2315BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R (Alt: SI2315BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 6000	30000:€0.1749 18000:€0.1879 12000:€0.2029 6000:€0.2359 3000:€0.3469
SI2315BDS-T1-E3 DISTI # SI2315BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R (Alt: SI2315BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2315BDS-T1-E3 DISTI # 06J7577	Vishay Intertechnologies	Trans MOSFET P-CH 12V 3A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 06J7577) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1000:$0.3400 500:$0.4250 250:$0.4700 100:$0.5150 50:$0.5980 25:$0.6790 1:$0.8500
SI2315BDS-T1-E3 DISTI # 06J7577	Vishay Intertechnologies	P CHANNEL MOSFET, -12V, -3A, TO-236,Transistor Polarity:P Channel,Continuous Drain Current Id:-3A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.04ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV RoHS Compliant: Yes	1105	1:$0.1890 25:$0.1890 50:$0.1890 100:$0.1890 250:$0.1890 500:$0.1890 1000:$0.1890
SI2315BDS-T1-E3. DISTI # 28AC2126	Vishay Intertechnologies	FOR NEW DESIGNS USE SI2333CDS-T1-GE3 ROHS COMPLIANT: NO	6000	30000:$0.1400 18000:$0.1440 12000:$0.1480 6000:$0.1540 1:$0.1590
SI2315BDS-T1-E3 DISTI # 70026068	Vishay Siliconix	MOSFET,Power,P-Channel,-12 V,8 V,3.5 A,1.25 W,-55 to 150 degC RoHS: Compliant	0	3000:$0.3930 6000:$0.3590 12000:$0.3480
SI2315BDS-T1-E3 DISTI # 781-SI2315BDS-E3	Vishay Intertechnologies	MOSFET 1.8V 3.2A 1.25W RoHS: Compliant	9252	1:$0.6700 10:$0.5420 100:$0.4110 500:$0.3400 1000:$0.2720 3000:$0.2460 6000:$0.2290 9000:$0.2210
SI2315BDS-T1 DISTI # 781-SI2315BDS	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI2333CDS-T1-GE3 RoHS: Not compliant	0
SI2315BDS-T1-E3	Vishay Intertechnologies	RoHS: Compliant	2460Cut Tape/Mini-Reel	1:$0.2700 100:$0.1960 250:$0.1840 500:$0.1750 1500:$0.1620
SI2315BDS-T1-E3	Vishay Intertechnologies	Single P-Channel 12 V 0.05 Ohms Surface Mount Power Mosfet - SOT-23 RoHS: Compliant	66000Reel	3000:$0.1460 6000:$0.1380
SI2315BDS-T1-E3	Vishay Intertechnologies		2713
SI2315BDS-T1-E3	Vishay Siliconix		620	9:$0.5625 37:$0.3656 138:$0.2109 476:$0.1800
SI2315BDS-T1-E3	Vishay Siliconix		1438
SI2315BDS-T1-E3	Vishay Semiconductors	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB	496	161:$0.2250 34:$0.3750 1:$0.7500
SI2315BDS-T1-E3	Vishay Intertechnologies	SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 3A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB	2184	506:$0.3168 127:$0.3960 1:$0.7920
SI2315BDS-T1-E3 DISTI # SI2315BDS-T1-E3	Vishay Intertechnologies	Transistor: P-MOSFET,unipolar,-12V,-3A,1.19W,SOT23	2261	3000:$0.1916 500:$0.2209 100:$0.2548 25:$0.2818 3:$0.2987
SI2315BDST1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB RoHS: Compliant	18000
SI2315BDS-T1-E3	Vishay Intertechnologies	MOSFET 1.8V 3.2A 1.25W RoHS: Compliant	Americas -	3000:$0.2320 6000:$0.2200 12000:$0.2130 18000:$0.2080
SI2315BDS-T1-E3 DISTI # 1470105	Vishay Intertechnologies	MOSFET, P, -12V, -3.85A, SOT-23 RoHS: Compliant	1105	500:£0.1890 250:£0.2010 100:£0.2210 25:£0.3220 1:£0.3480
SI2315BDS-T1-E3 DISTI # 1470105	Vishay Intertechnologies	MOSFET, P, -12V, -3.85A, SOT-23 RoHS: Compliant	1105	500:$0.3310 100:$0.4210 10:$0.5640 1:$0.6600
SI2315BDS-T1-E3 DISTI # 1470105RL	Vishay Intertechnologies	MOSFET, P, -12V, -3.85A, SOT-23 RoHS: Compliant	0	500:$0.3310 100:$0.4210 10:$0.5640 1:$0.6600
SI2315BDS-T1-E3 DISTI # XSKDRABV0043834	Vishay Intertechnologies	SO-16 RoHS: Compliant	2400 in Stock0 on Order	2400:$0.2557
SI2315BDS-T1-E3 DISTI # XSFP00000106261	Vishay Siliconix	General Purpose Inductor, 47uH, 10%,1Element,Ferrite-Core, SMD, 1206 RoHS: Compliant	55329 in Stock0 on Order	55329:$0.1947 3000:$0.2086

관련 상품

영상	부분 #	설명
	Mfr.#: ES2B-13-F OMO.#: OMO-ES2B-13-F	Rectifiers 100V 2A
	Mfr.#: HUF76609D3ST OMO.#: OMO-HUF76609D3ST	MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate
	Mfr.#: TS12A4514DBVR OMO.#: OMO-TS12A4514DBVR	Analog Switch ICs Lo-Vltg,Lo On-State Res SPST CMOS Ana Sw
	Mfr.#: RC0402FR-07100KL OMO.#: OMO-RC0402FR-07100KL	Thick Film Resistors - SMD 100K OHM 1%
	Mfr.#: 100SXE15M OMO.#: OMO-100SXE15M	Aluminum Organic Polymer Capacitors 100VDC 15uF 40mOhm 8x12mm OS-CON
	Mfr.#: TS12A4514DBVR OMO.#: OMO-TS12A4514DBVR-TEXAS-INSTRUMENTS	Analog Switch ICs Lo-Vltg,Lo On-State Res SPST CMOS Ana Sw
	Mfr.#: HUF76609D3ST OMO.#: OMO-HUF76609D3ST-ON-SEMICONDUCTOR	MOSFET N-CH 100V 10A DPAK
	Mfr.#: 100SXE15M OMO.#: OMO-100SXE15M-PANASONIC	Cap Aluminum Polymer 15uF 100VDC 20% (8 X 12mm) Radial 3.5mm 0.04 Ohm 2350mA 5000h 105C
	Mfr.#: 5520425-3 OMO.#: OMO-5520425-3-TE-CONNECTIVITY	Modular Connectors / Ethernet Connectors 6 PCB TOP ENTRY
	Mfr.#: ES2B-13-F OMO.#: OMO-ES2B-13-F-DIODES	DIODE GEN PURP 100V 2A SMB

유효성

재고:: Available
주문 시:: 1992
수량 입력:

SI2315BDS-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.67~~; ~~US$0.67~~

10: ~~US$0.54~~; ~~US$5.42~~

100: ~~US$0.41~~; ~~US$41.10~~

500: ~~US$0.34~~; ~~US$170.00~~

1000: ~~US$0.27~~; ~~US$272.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SI2315BDS-T 3
SI2315B 4
SI2315 14
SI231 94
SI23 561
SI2 1125

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SI2315BDS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes