IRF630NSTRLPBF

Mfr. #:: IRF630NSTRLPBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF630NSTRLPBF 데이터 시트
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HTML Datasheet:: IRF630NSTRLPBF Datasheet IRF630NSTRLPBF Datasheet (P4-P6)IRF630NSTRLPBF Datasheet (P7-P9)IRF630NSTRLPBF Datasheet (P10-P11)
ECAD Model:
추가 정보:: IRF630NSTRLPBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-252-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 200 V

Id - 연속 드레인 전류:: 9.3 A

Rds On - 드레인 소스 저항:: 300 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 23.3 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 82 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

키:: 2.3 mm

길이:: 6.5 mm

트랜지스터 유형:: 1 N-Channel

너비:: 6.22 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 4.9 S

가을 시간:: 15 ns

상품 유형:: MOSFET

상승 시간:: 14 ns

공장 팩 수량:: 800

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 27 ns

일반적인 켜기 지연 시간:: 7.9 ns

부품 번호 별칭:: SP001564548

단위 무게:: 0.139332 oz

Tags: IRF630NST, IRF630NS, IRF630N, IRF630, IRF63, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF630NSTRLPBF 설명

***ure Electronics: Single N-Channel 200 V 0.3 Ohm 35 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R

***eco: IRF630NSTRLPBF,MOSFET, 200V, 9 .5A, 300 MOHM, 23.3 NC QG, D2

***roFlash: Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ment14 APAC: N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Tra; N CHANNEL MOSFET, 200V, 9.3A D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

***nell: MOSFET, N-CH, 200V, 9.3A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.3A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 82W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.3 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 300 / Gate-Source Voltage V = 20 / Fall Time ns = 15 / Rise Time ns = 14 / Turn-OFF Delay Time ns = 27 / Turn-ON Delay Time ns = 7.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 82

IRF630NSTRLPBF 추가 정보

200-250V HEXFET® Power MOSFETs: Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More

Market price

부분 #	제조	설명	재고	가격
IRF630NSTRLPBF DISTI # V72:2272_13890568	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	968	500:$0.5869 250:$0.6470 100:$0.6489 25:$0.7894 10:$0.7926 1:$0.8895
IRF630NSTRLPBF DISTI # IRF630NSTRLPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1915In Stock	100:$1.0587 10:$1.3210 1:$1.4800
IRF630NSTRLPBF DISTI # IRF630NSTRLPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 200V 9.3A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	1600In Stock	800:$0.7183
IRF630NSTRLPBF DISTI # 26196294	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	968	500:$0.5869 250:$0.6470 100:$0.6489 25:$0.7894 18:$0.7926
IRF630NSTRLPBF DISTI # IRF630NSTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF630NSTRLPBF) RoHS: Compliant Min Qty: 1600 Container: Reel	Americas - 2400	1600:$0.4099 3200:$0.3949 4800:$0.3809 8000:$0.3679 16000:$0.3619
IRF630NSTRLPBF DISTI # SP001564548	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001564548) RoHS: Compliant Min Qty: 800 Container: Tape and Reel	Europe - 36600	800:€0.4569 1600:€0.4309 3200:€0.4059 4800:€0.4049 8000:€0.3969
IRF630NSTRLPBF DISTI # IRF630NSTRLPBF	Infineon Technologies AG	Trans MOSFET N-CH 200V 9.3A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF630NSTRLPBF) RoHS: Compliant Min Qty: 1600 Container: Tape and Reel	Asia - 0
IRF630NSTRLPBF DISTI # 13AC9181	Infineon Technologies AG	MOSFET, N-CH, 200V, 9.3A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes	1653	1:$1.2800 10:$1.1000 25:$1.0200 50:$0.9450 100:$0.8660 250:$0.8200 500:$0.7730
IRF630NSTRLPBF DISTI # 70019553	Infineon Technologies AG	IRF630NSTRLPBF N-channel MOSFET Transistor,9.3 A,200 V,3+Tab-Pin D2PAK RoHS: Compliant	0	1600:$1.9900
IRF630NSTRLPBF	International Rectifier	RoHS: Not Compliant	600	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800
IRF630NSTRLPBF DISTI # 942-IRF630NSTRLPBF	Infineon Technologies AG	MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC RoHS: Compliant	1017	1:$1.1700 10:$0.9980 100:$0.7670 500:$0.6770 800:$0.5350 2400:$0.4740 9600:$0.4570
IRF630NSTRLPBF DISTI # 9154945P	Infineon Technologies AG	MOSFET N-CHANNEL HEXFET 200V 9.5A D2PAK, RL	336	80:£0.6380 400:£0.5550 800:£0.3870 2000:£0.3790
IRF630NSTRLPBF DISTI # IRF630NSPBF-GURT	Infineon Technologies AG	N-Ch 200V 9,3A 82W 0,3R DPak RoHS: Compliant	360	10:€0.6660 50:€0.3960 200:€0.3060 500:€0.2950
IRF630NSTRLPBF DISTI # 2725890	Infineon Technologies AG	MOSFET, N-CH, 200V, 9.3A, TO-263 RoHS: Compliant	2398	5:£0.7880 25:£0.6510 100:£0.5920 250:£0.5660 500:£0.3950
IRF630NSTRLPBF DISTI # 2725890	Infineon Technologies AG	MOSFET, N-CH, 200V, 9.3A, TO-263 RoHS: Compliant	1648	1:$1.8500 10:$1.5800 100:$1.2200 500:$1.0800 800:$0.8470 2400:$0.7500 9600:$0.7240
IRF630NSTRLPBF DISTI # XSLY00000006692	INFINEON/IR	D2-PAK (TO-263) RoHS: Compliant	1152	1600:$0.5429
IRF630NSTRLPBF DISTI # C1S322000481444	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	968	250:$0.6470 100:$0.6489 25:$0.7894 10:$0.7926
IRF630NSTRLPBF DISTI # C1S322000481435	Infineon Technologies AG	Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	6400	2400:$0.4230 1600:$0.5110 800:$0.5520

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유효성

재고:: Available
주문 시:: 1984
수량 입력:

IRF630NSTRLPBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.16~~; ~~US$1.16~~

10: ~~US$1.00~~; ~~US$9.98~~

100: ~~US$0.77~~; ~~US$76.70~~

500: ~~US$0.68~~; ~~US$338.50~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

IRF630NST 6
IRF630NS 8
IRF630N 18
IRF630 63
IRF63 102
IRF6 688
IRF 8615

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IRF630NSTRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes