STGWT80H65DFB

STGWT80H65DFB
Mfr. #:
STGWT80H65DFB
제조사:
STMicroelectronics
설명:
IGBT 650V 120A 469W TO3P-3L
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGWT80H65DFB 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGWT80H65DFB 추가 정보 STGWT80H65DFB Product Details
제품 속성
속성 값
제조사
ST마이크로일렉트로닉스
제품 카테고리
IGBT - 싱글
시리즈
600-650V IGBTs
포장
튜브
단위 무게
0.238311 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-3P-3, SC-65-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-3P
구성
하나의
파워맥스
469W
역복구-시간-trr
85ns
전류 수집기 Ic-Max
120A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT형
트렌치 필드 스톱
전류 수집기 펄스 Icm
240A
Vce-on-Max-Vge-Ic
2V @ 15V, 80A
스위칭 에너지
2.1mJ (on), 1.5mJ (off)
게이트 차지
414nC
Td-on-off-25°C
84ns/280ns
시험조건
400V, 80A, 10 Ohm, 15V
Pd 전력 손실
469 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
650 V
컬렉터-이미터-포화-전압
1.6 V
연속 수집기 전류 at-25-C
120 A
게이트 이미 터 누설 전류
250 nA
최대 게이트 이미 터 전압
+/- 20 V
연속 수집기 전류 Ic-Max
80 A
Tags
STGWT8, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
HB Series 650 V 120 A High Speed Trench Gate Field-Stop IGBT - TO-3P
***ical
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-3P Tube
***va Crawler
Trench gate field-stop 650 V, 80 A high speed HB series IGBT
***Components
In a Tube of 30, STMicroelectronics STGWT80H65DFB IGBT
***p One Stop Global
Trans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 80A TO-3P
***nell
IGBT, SINGLE, 650V, 120A, TO-3P
***i-Key
IGBT 650V 120A 469W TO3P-3L
***ark
IGBT, SINGLE, 650V, 120A, TO-3P; DC Collector Current:120A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:469W; Collector Emitter Voltage V(br)ceo:650V; No. of Pins:3Pins; Operating Temperature Max:175�C RoHS Compliant: Yes
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
부분 # 제조 설명 재고 가격
STGWT80H65DFB
DISTI # 32924310
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
300
  • 200:$3.7485
  • 50:$3.9780
  • 10:$4.1182
  • 3:$9.0780
STGWT80H65DFB
DISTI # 497-14234-5-ND
STMicroelectronicsIGBT 650V 120A 469W TO3P-3L
RoHS: Compliant
Min Qty: 1
Container: Tube
8In Stock
  • 510:$4.8825
  • 120:$5.6070
  • 30:$6.4577
  • 10:$6.7730
  • 1:$7.5000
STGWT80H65DFB
DISTI # STGWT80H65DFB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube (Alt: STGWT80H65DFB)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1000:€3.4900
  • 500:€3.6900
  • 100:€3.8900
  • 50:€3.9900
  • 25:€4.1900
  • 10:€4.3900
  • 1:€4.7900
STGWT80H65DFB
DISTI # STGWT80H65DFB
STMicroelectronicsTrans IGBT Chip N-CH 650V 120A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT80H65DFB)
RoHS: Compliant
Min Qty: 300
Container: Tube
Americas - 0
  • 3000:$3.7900
  • 1800:$3.8900
  • 1200:$3.9900
  • 600:$4.1900
  • 300:$4.3900
STGWT80H65DFB
DISTI # 45AC7598
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P,DC Collector Current:120A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:469W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C RoHS Compliant: Yes71
  • 250:$5.1500
  • 100:$5.3900
  • 50:$5.8000
  • 25:$6.2100
  • 10:$6.5100
  • 1:$7.2000
STGWT80H65DFB
DISTI # 511-STGWT80H65DFB
STMicroelectronicsIGBT Transistors Trench gate H series 650V 80A HiSpd
RoHS: Compliant
193
  • 1:$7.1300
  • 10:$6.4500
  • 25:$6.1500
  • 100:$5.3400
  • 250:$5.1000
STGWT80H65DFB
DISTI # 8297136P
STMicroelectronicsIGBT TRENCH HB SERIES 650V 80A TO-3P, TU184
  • 10:£2.9500
STGWT80H65DFB
DISTI # 2807181
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P
RoHS: Compliant
222
  • 1020:$6.4500
  • 510:$7.4100
  • 120:$8.5000
  • 30:$9.7900
  • 1:$11.3700
STGWT80H65DFB
DISTI # 2807181
STMicroelectronicsIGBT, SINGLE, 650V, 120A, TO-3P222
  • 100:£3.9100
  • 50:£4.2100
  • 10:£4.5000
  • 5:£5.2200
  • 1:£5.7200
영상 부분 # 설명
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB

IGBT Transistors Trench gate H series 650V 80A HiSpd
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F

IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB

IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
STGWT80V60DF

Mfr.#: STGWT80V60DF

OMO.#: OMO-STGWT80V60DF-STMICROELECTRONICS

IGBT Transistors Trench gte FieldStop IGBT 600V 80A
STGWT80H65DFB

Mfr.#: STGWT80H65DFB

OMO.#: OMO-STGWT80H65DFB-STMICROELECTRONICS

IGBT 650V 120A 469W TO3P-3L
STGWT80V60F

Mfr.#: STGWT80V60F

OMO.#: OMO-STGWT80V60F-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
STGWT80H65FB

Mfr.#: STGWT80H65FB

OMO.#: OMO-STGWT80H65FB-STMICROELECTRONICS

IGBT Transistors IGBT & Power Bipola
유효성
재고:
Available
주문 시:
5500
수량 입력:
STGWT80H65DFB의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$5.62
US$5.62
10
US$5.34
US$53.42
100
US$5.06
US$506.05
500
US$4.78
US$2 389.65
1000
US$4.50
US$4 498.20
시작
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