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SQJB80EP-T1_GE3

SQJB80EP-T1_GE3
Mfr. #:
SQJB80EP-T1_GE3
제조사:
Vishay
설명:
MOSFET 2 N-CH 80V POWERPAK SO8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SQJB80EP-T1_GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJB80EP-T1_GE3 DatasheetSQJB80EP-T1_GE3 Datasheet (P4-P6)SQJB80EP-T1_GE3 Datasheet (P7)
ECAD Model:
제품 속성
속성 값
Tags
SQJB, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 80V 30A Automotive 8-Pin PowerPAK SO EP
***et
Trans MOSFET Array Dual N-CH 80V 30A 8-Pin PowerPAK-SO
***i-Key
MOSFET 2 N-CH 80V POWERPAK SO8
***ark
Mosfet, Aec-Q101, 80V, 30A, Powerpak So; Transistor Polarity:dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0155Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, 80V, 30A, POWERPAK SO; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:48W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:TrenchFET Series; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, AEC-Q101, 80V, 30A, POWERPAK SO; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:30A; Tensione Drain Source Vds:80V; Resistenza di Attivazione Rds(on):0.0155ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:48W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:AEC-Q101; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
부분 # 제조 설명 재고 가격
SQJB80EP-T1_GE3
DISTI # V72:2272_17600343		Vishay IntertechnologiesSQJB80EP-T1_GE3**MULT1
9172
3107020		3595
  • 75000:$0.4225
  • 30000:$0.4312
  • 15000:$0.4400
  • 6000:$0.4487
  • 3000:$0.4574
  • 1000:$0.4662
  • 500:$0.5548
  • 250:$0.6791
  • 100:$0.6856
  • 50:$0.7216
  • 25:$0.8018
  • 10:$0.9799
  • 1:$1.1862
SQJB80EP-T1_GE3
DISTI # V99:2348_17600343		Vishay IntertechnologiesSQJB80EP-T1_GE3**MULT1
9172
3107020		0
  • 3000000:$0.4573
  • 1500000:$0.4574
  • 300000:$0.4580
  • 3000:$0.4586
SQJB80EP-T1_GE3
DISTI # SQJB80EP-T1_GE3CT-ND		Vishay SiliconixMOSFET 2 N-CH 80V POWERPAK SO8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3219In Stock
  • 1000:$0.5061
  • 500:$0.6411
  • 100:$0.7761
  • 10:$0.9950
  • 1:$1.1100
SQJB80EP-T1_GE3
DISTI # SQJB80EP-T1_GE3DKR-ND		Vishay SiliconixMOSFET 2 N-CH 80V POWERPAK SO8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3219In Stock
  • 1000:$0.5061
  • 500:$0.6411
  • 100:$0.7761
  • 10:$0.9950
  • 1:$1.1100
SQJB80EP-T1_GE3
DISTI # SQJB80EP-T1_GE3TR-ND		Vishay SiliconixMOSFET 2 N-CH 80V POWERPAK SO8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 15000:$0.4193
  • 6000:$0.4357
  • 3000:$0.4586
SQJB80EP-T1_GE3
DISTI # 25817765		Vishay IntertechnologiesSQJB80EP-T1_GE3**MULT1
9172
3107020		3595
  • 15:$1.1862
SQJB80EP-T1_GE3
DISTI # SQJB80EP-T1_GE3		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 80V 30A 8-Pin PowerPAK-SO - Tape and Reel (Alt: SQJB80EP-T1_GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SQJB80EP-T1_GE3
    DISTI # SQJB80EP-T1_GE3    		Vishay IntertechnologiesTrans MOSFET Array Dual N-CH 80V 30A 8-Pin PowerPAK-SO (Alt: SQJB80EP-T1_GE3)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€0.4359
    • 500:€0.4409
    • 100:€0.4489
    • 50:€0.4549
    • 25:€0.5149
    • 10:€0.6349
    • 1:€0.8859
    SQJB80EP-T1_GE3
    DISTI # 20AC3999    		Vishay IntertechnologiesDUAL N-CHANNEL 80-V (D-S) 175C MOSFE0
    • 10000:$0.3970
    • 6000:$0.4060
    • 4000:$0.4220
    • 2000:$0.4680
    • 1000:$0.5150
    • 1:$0.5370
    SQJB80EP-T1_GE3
    DISTI # 78-SQJB80EP-T1_GE3    		Vishay IntertechnologiesMOSFET 80V Vds 30A Id AEC-Q101 Qualified
    RoHS: Compliant    		3160
    • 1:$1.0900
    • 10:$0.8980
    • 100:$0.6890
    • 500:$0.5920
    • 1000:$0.4670
    • 3000:$0.4360
    • 6000:$0.4140
    • 9000:$0.3990
    SQJB80EP-T1_GE3
    DISTI # 2708321    		Vishay IntertechnologiesMOSFET, AEC-Q101, 80V, 30A, POWERPAK SO
    RoHS: Compliant    		5817
    • 1000:$0.7630
    • 500:$0.9670
    • 100:$1.1700
    • 10:$1.5000
    • 1:$1.6700
    SQJB80EP-T1_GE3
    DISTI # 2708321    		Vishay IntertechnologiesMOSFET, AEC-Q101, 80V, 30A, POWERPAK SO5818
    • 500:£0.5290
    • 250:£0.6060
    • 100:£0.6820
    • 10:£0.8880
    • 1:£1.0700
    영상 부분 # 설명
    SQJB80EP

    Mfr.#: SQJB80EP

    OMO.#: OMO-SQJB80EP-1190

    		 신규 및 오리지널
    SQJB80EP-T1_GE3

    Mfr.#: SQJB80EP-T1_GE3

    OMO.#: OMO-SQJB80EP-T1-GE3-VISHAY

    		 MOSFET 2 N-CH 80V POWERPAK SO8
    유효성
    재고:
    Available
    주문 시:
    2500
    수량 입력:
    SQJB80EP-T1_GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$0.00
    US$0.00
    10
    US$0.00
    US$0.00
    100
    US$0.00
    US$0.00
    500
    US$0.00
    US$0.00
    1000
    US$0.00
    US$0.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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