BSZ22DN20NS3GATMA1

Mfr. #:: BSZ22DN20NS3GATMA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSZ22DN20NS3GATMA1 데이터 시트
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ECAD Model:
추가 정보:: BSZ22DN20NS3GATMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TSDSON-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 200 V

Id - 연속 드레인 전류:: 7 A

Rds On - 드레인 소스 저항:: 194 mOhms

Vgs th - 게이트 소스 임계 전압:: 2 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 5.6 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 34 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 1.1 mm

길이:: 3.3 mm

시리즈:: OptiMOS 3

트랜지스터 유형:: 1 N-Channel

너비:: 3.3 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 3.5 S

가을 시간:: 3 ns

상품 유형:: MOSFET

상승 시간:: 4 ns

공장 팩 수량:: 5000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 6 ns

일반적인 켜기 지연 시간:: 4 ns

부품 번호 별칭:: BSZ22DN20NS3 BSZ22DN2NS3GXT G SP000781794

단위 무게:: 0.001277 oz

Tags: BSZ22, BSZ2, BSZ

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSZ22DN20NS3GATMA1 설명

***Components: In a Pack of 20, N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSZ22DN20NS3GATMA1

***p One Stop Global: Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP

***ical: Trans MOSFET N-CH 200V 7A 8-Pin TSDSON

***ark: MOSFET, N CH, 200V, 7A, TSDSON-8

***i-Key: MOSFET N-CH 200V 7A 8TDSON

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 200V, 7A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:34W; Transistor Case Style:TSDSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 200V, 7A, TSDSON-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.194ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:34W; Modello Case Transistor:TSDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineon's 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. | Summary of Features: Industrys lowest R DS(on); Lowest Q g and Q gd; Worlds lowest FOM RoHS compliant halogen free MSL 1 rated | Benefits: Highest efficiency; Highest power density; Lowest board space consumption; Minimal device paralleling required; System cost improvement; Enviromentally friendly; Easy-to-design-in products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V110V systems; Isolated DC-DC converters; Lighting for 110V AC networks; HID lamps; Class D audio amplifiers; Uninterruptable power supplies (UPS); LED lighting power supply

BSZ22DN20NS3GATMA1 추가 정보

Wireless Charging Solutions: Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Resonant Wireless Charging - Consumer Applications: Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Market price

부분 #	제조	설명	재고	가격
BSZ22DN20NS3GATMA1 DISTI # V36:1790_06384496	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	20000	5000:$0.3973
BSZ22DN20NS3GATMA1 DISTI # V72:2272_06384496	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	664	500:$0.5384 250:$0.5510 100:$0.6122 25:$0.7147 10:$0.8735 1:$1.0134
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9613In Stock	1000:$0.4633 500:$0.5869 100:$0.7104 10:$0.9110 1:$1.0200
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A 8TSDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9613In Stock	1000:$0.4633 500:$0.5869 100:$0.7104 10:$0.9110 1:$1.0200
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 200V 7A 8TSDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.3799 10000:$0.3839 5000:$0.3988
BSZ22DN20NS3GATMA1 DISTI # 33128679	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	20000	5000:$0.3973
BSZ22DN20NS3GATMA1 DISTI # 32736050	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	5000	5000:$0.3501
BSZ22DN20NS3GATMA1 DISTI # 31984785	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP T/R RoHS: Compliant	664	16:$1.0134
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Bulk (Alt: BSZ22DN20NS3GATMA1) Min Qty: 962 Container: Bulk	Americas - 0	9620:$0.3299 4810:$0.3359 2886:$0.3479 1924:$0.3609 962:$0.3739
BSZ22DN20NS3GATMA1 DISTI # BSZ22DN20NS3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP - Tape and Reel (Alt: BSZ22DN20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3619 30000:$0.3689 20000:$0.3819 10000:$0.3959 5000:$0.4109
BSZ22DN20NS3GATMA1 DISTI # SP000781794	Infineon Technologies AG	Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP (Alt: SP000781794) RoHS: Compliant Min Qty: 5000	Europe - 0	50000:€0.3329 30000:€0.3579 20000:€0.3879 10000:€0.4229 5000:€0.5179
BSZ22DN20NS3GATMA1 DISTI # 85X4160	Infineon Technologies AG	MOSFET Transistor, N Channel, 7 A, 200 V, 0.194 ohm, 10 V, 3 V RoHS Compliant: Yes	0
BSZ22DN20NS3 G DISTI # 726-BSZ22DN20NS3G	Infineon Technologies AG	MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 RoHS: Compliant	12720	1:$0.9300 10:$0.8000 100:$0.6150 500:$0.5430 1000:$0.4290 5000:$0.3800 10000:$0.3660
BSZ22DN20NS3GATMA1 DISTI # 726-BSZ22DN20NS3GATM	Infineon Technologies AG	MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 RoHS: Compliant	218	1:$0.9300 10:$0.8000 100:$0.6150 500:$0.5430 1000:$0.4290 5000:$0.3800 10000:$0.3660
BSZ22DN20NS3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	122641	1000:$0.3400 500:$0.3600 100:$0.3800 25:$0.3900 1:$0.4200
BSZ22DN20NS3GATMA1 DISTI # 2443374	Infineon Technologies AG	MOSFET, N CH, 200V, 7A, TSDSON-8 RoHS: Compliant	0	5000:$0.5850 1000:$0.6600 500:$0.8350 100:$0.9460 10:$1.2400 1:$1.4300
BSZ22DN20NS3GATMA1 DISTI # 2443374RL	Infineon Technologies AG	MOSFET, N CH, 200V, 7A, TSDSON-8 RoHS: Compliant	0	5000:$0.5850 1000:$0.6600 500:$0.8350 100:$0.9460 10:$1.2400 1:$1.4300

관련 상품

영상	부분 #	설명
	Mfr.#: TLV313IDBVR OMO.#: OMO-TLV313IDBVR	Operational Amplifiers - Op Amps Op Amp
	Mfr.#: BAS40-04LT1G OMO.#: OMO-BAS40-04LT1G	Schottky Diodes & Rectifiers 40V 225mW Dual
	Mfr.#: MBRS3200T3G OMO.#: OMO-MBRS3200T3G	Schottky Diodes & Rectifiers 3A 200V
	Mfr.#: LM2595SX-ADJ/NOPB OMO.#: OMO-LM2595SX-ADJ-NOPB	Switching Voltage Regulators 150 KHZ 1A STEP-DOWN VLTG REG
	Mfr.#: TLV2313IDR OMO.#: OMO-TLV2313IDR-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Low-Power, RRIO, 500-uV Offset, 1-MHz Operational Amplifier for Cost-Sensitive Systems 8-SOIC -40 to 125
	Mfr.#: TLV313IDBVR OMO.#: OMO-TLV313IDBVR-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Low-Power, RRIO, 500-uV Offset, 1-MHz Operational Amplifier for Cost-Sensitive Systems 5-SOT-23 -40 to 125
	Mfr.#: VLCF4018T-3R3N1R2-2 OMO.#: OMO-VLCF4018T-3R3N1R2-2-TDK	Fixed Inductors 3.3uH 1.2A 4x4x1.8mm
	Mfr.#: XFL4020-102MEC OMO.#: OMO-XFL4020-102MEC-1190	Fixed Inductors 1uH 20% 11A 11.9mOhms AEC-Q200
	Mfr.#: LM2595SX-ADJ/NOPB OMO.#: OMO-LM2595SX-ADJ-NOPB-TEXAS-INSTRUMENTS	IC REG BUCK ADJ 1A TO263-5
	Mfr.#: AT0603FRE07100RL OMO.#: OMO-AT0603FRE07100RL-YAGEO	Thin Film Resistors - SMD 100 Ohms 1% Tol. 50 PPM ANTI-SULFUR

유효성

재고:: Available
주문 시:: 1988
수량 입력:

BSZ22DN20NS3GATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.93~~; ~~US$0.93~~

10: ~~US$0.80~~; ~~US$8.00~~

100: ~~US$0.62~~; ~~US$61.50~~

500: ~~US$0.54~~; ~~US$271.50~~

1000: ~~US$0.43~~; ~~US$429.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

BSZ22 3
BSZ2 10
BSZ 334

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BSZ22DN20NS3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes