 | | | |
| PartNumber | BSZ215CHXTMA1 | BSZ22DN20NS3 G | BSZ22DN20NS3GATMA1 |
| Description | MOSFET SMALL SIGNAL+P-CH | MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | BSZ215C H SP001277210 | BSZ22DN20NS3GATMA1 BSZ22DN2NS3GXT SP000781794 | BSZ22DN20NS3 BSZ22DN2NS3GXT G SP000781794 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 200 V | 200 V |
| Id Continuous Drain Current | - | 7 A | 7 A |
| Rds On Drain Source Resistance | - | 194 mOhms | 194 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 5.6 nC | 5.6 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 34 W | 34 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 3.5 S | 3.5 S |
| Fall Time | - | 3 ns | 3 ns |
| Rise Time | - | 4 ns | 4 ns |
| Typical Turn Off Delay Time | - | 6 ns | 6 ns |
| Typical Turn On Delay Time | - | 4 ns | 4 ns |
| Tradename | - | - | OptiMOS |
| Series | - | - | OptiMOS 3 |
| Unit Weight | - | - | 0.001277 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ215CHXTMA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSZ22DN20NS3 G | MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 | ||
| BSZ240N12NS3 G | MOSFET N-Ch 120V 37A TSDSON-8 OptiMOS 3 | ||
| BSZ22DN20NS3GATMA1 | MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3 | ||
| BSZ215CHXTMA1 | MOSFET N/P-CH 20V 8TDSON | ||
| BSZ22DN20NS3GATMA1 | MOSFET N-CH 200V 7A 8TSDSON | ||
| BSZ240N12NS3GATMA1 | MOSFET N-CH 120V 37A TSDSON-8 | ||
Infineon Technologies |
BSZ240N12NS3GATMA1 | MOSFET MV POWER MOS | |
| BSZ2012-102T | 신규 및 오리지널 | ||
| BSZ215C H | 신규 및 오리지널 | ||
| BSZ215CH | 신규 및 오리지널 | ||
| BSZ22DN20NS3 G | Trans MOSFET N-CH 200V 7A 8-Pin TSDSON EP | ||
| BSZ22DN20NS3G | Power Field-Effect Transistor, 7A I(D), 200V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSZ240N12NS3 G | MOSFET N-Ch 120V 37A TSDSON-8 OptiMOS 3 | ||
| BSZ240N12NS3G | Trans MOSFET N-CH 120V 37A 8-Pin TSDSON EP (Alt: BSZ240N12NS3 G) |