IPB60R060P7ATMA1

IPB60R060P7ATMA1
Mfr. #:
IPB60R060P7ATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-CH TO263-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB60R060P7ATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPB60R060P7ATMA1 추가 정보
제품 속성
속성 값
Tags
IPB60R0, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 60 mOhm 67 nC CoolMOS™ Power Mosfet - D2PAK
***et
CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK
***nell
MOSFET, N-CH, 600V, 48A, TO-263
***ark
Mosfet, N-Ch, 600V, 48A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPB60R060P7ATMA1
DISTI # V72:2272_18787574
Infineon Technologies AGHIGH POWER_NEW890
  • 500:$3.9910
  • 250:$4.2699
  • 100:$4.6830
  • 25:$4.8540
  • 10:$5.3930
  • 1:$6.9707
IPB60R060P7ATMA1
DISTI # V36:1790_18787574
Infineon Technologies AGHIGH POWER_NEW0
  • 1000000:$2.8090
  • 500000:$2.8120
  • 100000:$3.0510
  • 10000:$3.4740
  • 1000:$3.5450
IPB60R060P7ATMA1
DISTI # IPB60R060P7ATMA1CT-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1692In Stock
  • 500:$4.3294
  • 100:$5.0857
  • 10:$6.2070
  • 1:$6.9100
IPB60R060P7ATMA1
DISTI # IPB60R060P7ATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1692In Stock
  • 500:$4.3294
  • 100:$5.0857
  • 10:$6.2070
  • 1:$6.9100
IPB60R060P7ATMA1
DISTI # IPB60R060P7ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
1000In Stock
  • 2000:$3.3677
  • 1000:$3.5449
IPB60R060P7ATMA1
DISTI # 33704475
Infineon Technologies AGHIGH POWER_NEW1000
  • 1000:$5.2188
IPB60R060P7ATMA1
DISTI # 32882183
Infineon Technologies AGHIGH POWER_NEW890
  • 2:$6.9707
IPB60R060P7ATMA1
DISTI # IPB60R060P7
Infineon Technologies AGCoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: IPB60R060P7)
RoHS: Compliant
Min Qty: 1000
Asia - 400
  • 50000:$3.4949
  • 25000:$3.5463
  • 10000:$3.5993
  • 5000:$3.6538
  • 3000:$3.7680
  • 2000:$3.8895
  • 1000:$4.0192
IPB60R060P7ATMA1
DISTI # IPB60R060P7ATMA1
Infineon Technologies AGCoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK - Tape and Reel (Alt: IPB60R060P7ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$2.9900
  • 6000:$3.0900
  • 4000:$3.1900
  • 2000:$3.2900
  • 1000:$3.3900
IPB60R060P7ATMA1
DISTI # SP001664882
Infineon Technologies AGCoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: SP001664882)
RoHS: Compliant
Min Qty: 1000
Europe - 0
  • 10000:€2.5900
  • 6000:€2.7900
  • 4000:€2.9900
  • 2000:€3.1900
  • 1000:€3.2900
IPB60R060P7ATMA1
DISTI # 49AC7993
Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes150
  • 500:$4.0400
  • 250:$4.5000
  • 100:$4.7500
  • 50:$4.9900
  • 25:$5.2300
  • 10:$5.4700
  • 1:$6.4400
IPB60R060P7ATMA1
DISTI # 726-IPB60R060P7ATMA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
592
  • 1:$6.3800
  • 10:$5.4200
  • 100:$4.7000
  • 250:$4.4600
  • 500:$4.0000
  • 1000:$3.3700
  • 2000:$3.2000
IPB60R060P7ATMA1Infineon Technologies AGSingle N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK
RoHS: Not Compliant
1000Reel
  • 1000:$3.1800
IPB60R060P7ATMA1
DISTI # 2841641
Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-263
RoHS: Compliant
146
  • 1000:$4.8300
  • 500:$4.9300
  • 250:$5.1900
  • 100:$5.4900
  • 10:$6.2100
  • 1:$6.6400
IPB60R060P7ATMA1
DISTI # 2841641
Infineon Technologies AGMOSFET, N-CH, 600V, 48A, TO-263406
  • 500:£3.1100
  • 250:£3.4700
  • 100:£3.6500
  • 10:£4.2100
  • 1:£5.4700
IPB60R060P7ATMA1
DISTI # XSFP00000158368
Infineon Technologies AGSingle N-Channel 600 V 60 mOhm 67 nCCoolMOSPowerMosfet - D2PAK
RoHS: Compliant
2000 in Stock0 on Order
  • 2000:$4.2400
  • 1000:$4.5400
영상 부분 # 설명
IPB60R060P7ATMA1

Mfr.#: IPB60R060P7ATMA1

OMO.#: OMO-IPB60R060P7ATMA1

MOSFET HIGH POWER_NEW
IPB60R060C7ATMA1

Mfr.#: IPB60R060C7ATMA1

OMO.#: OMO-IPB60R060C7ATMA1

MOSFET HIGH POWER_NEW
IPB60R060C7ATMA1

Mfr.#: IPB60R060C7ATMA1

OMO.#: OMO-IPB60R060C7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH 650V 35A TO263-3
IPB60R060P7ATMA1

Mfr.#: IPB60R060P7ATMA1

OMO.#: OMO-IPB60R060P7ATMA1-INFINEON-TECHNOLOGIES

MOSFET N-CH TO263-3
유효성
재고:
Available
주문 시:
5000
수량 입력:
IPB60R060P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$4.80
US$4.80
10
US$4.56
US$45.60
100
US$4.32
US$432.00
500
US$4.08
US$2 040.00
1000
US$3.84
US$3 840.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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