IRF6662TRPBF

Mfr. #:: IRF6662TRPBF
제조사:: Infineon Technologies
설명:: MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF6662TRPBF 데이터 시트
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HTML Datasheet:: IRF6662TRPBF Datasheet IRF6662TRPBF Datasheet (P4-P6)IRF6662TRPBF Datasheet (P7-P9)IRF6662TRPBF Datasheet (P10)
ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DirectFET-MZ

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 8.3 A

Rds On - 드레인 소스 저항:: 17.5 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 22 nC

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 89 W

구성:: 하나의

채널 모드:: 상승

상표명:: 다이렉트펫

포장:: 릴

키:: 0.7 mm

길이:: 6.35 mm

트랜지스터 유형:: 1 N-Channel

너비:: 5.05 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 5.9 ns

상품 유형:: MOSFET

상승 시간:: 7.5 ns

공장 팩 수량:: 4800

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 24 ns

일반적인 켜기 지연 시간:: 11 ns

부품 번호 별칭:: SP001576850

Tags: IRF6662, IRF666, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6662TRPBF 설명

***ure Electronics: Single N-Channel 100 V 31 mOhm 22 nC HEXFET® Power Mosfet - DirectFET®

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:6.6A; On Resistance, Rds(on):22mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MZ ;RoHS Compliant: Yes

***el Electronic: Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3

***ineon: Target Applications: AC-DC; Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side

***ernational Rectifier: A 100V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 47 amperes optimized with low on resistance for applications such as active ORing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ure Electronics: Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ow.cn: Trans MOSFET N-CH Si 100V 59A Automotive 3-Pin(2+Tab) D2PAK T/R

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: D2PAK Polarity: N Power dissipation: 160 W

***(Formerly Allied Electronics): MOSFET, 100V, 59A, 18 mOhm, 82 nC Qg, D2-Pak

***Yang: Trans MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (A

***roFlash: Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. Of Pins:3Pins Rohs Compliant: Yes

***icroelectronics: N-channel 100 V, 0.015 Ohm, 60 A, STripFET(TM) DeepGATE(TM) Power MOSFET in DPAK

***ure Electronics: N-Channel 100 V 0.0195 Ohm Surface Mount STripFET Power MosFet - TO-252-3

***nell: MOSFET, N-CH, 100V, 60A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: STripFET DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)

***r Electronics: Power Field-Effect Transistor, 60A I(D), 100V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***(Formerly Allied Electronics): IRFR540ZPBF N-channel MOSFET Transistor; 35 A; 100 V; 3-Pin DPAK

*** Source Electronics: Trans MOSFET N-CH Si 100V 35A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 35A DPAK

***ure Electronics: Single N-Channel 100 V 28.5 mOhm 39 nC HEXFET® Power Mosfet - DPAK

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Lighting LED

***ark: Mosfet; Transistor Polarity:n Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0285Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:91W; Product Range:-Rohs Compliant: Yes

***ure Electronics: Single N-Channel 100 V 26.5 mOhm 16 nC OptiMOS Power Mosfet - TDSON-8

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 40A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:40A; Power Dissipation Pd:78W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: N-Channel 100 V 16 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

***Yang: Trans MOSFET N-CH 100V 9A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 5.1kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 5.1K OHM 1% 1/10W 0402

***ment14 APAC: MOSFET, N CH 61A 100V, TO236AB; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:TO-263; Power Dissipation Pd:150W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***emi: N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ

*** Stop Electro: Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 5.11kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 5.11K OHM 1% 1/10W 0402

Market price

부분 #	제조	설명	재고	가격
IRF6662TRPBF DISTI # V72:2272_13890374	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 8.3A 7-Pin Direct-FET MZ T/R RoHS: Compliant	9592	6000:$0.8129 3000:$0.8403 1000:$0.8474 500:$1.0038 250:$1.1283 100:$1.1412 25:$1.3992 10:$1.4047 1:$1.5914
IRF6662TRPBF DISTI # IRF6662TRPBFCT-ND	Infineon Technologies AG	MOSFET N-CH 100V 8.3A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3193In Stock	1000:$1.0662 500:$1.2868 100:$1.6545 10:$2.0590 1:$2.2800
IRF6662TRPBF DISTI # IRF6662TRPBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 8.3A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3193In Stock	1000:$1.0662 500:$1.2868 100:$1.6545 10:$2.0590 1:$2.2800
IRF6662TRPBF DISTI # IRF6662TRPBFTR-ND	Infineon Technologies AG	MOSFET N-CH 100V 8.3A DIRECTFET RoHS: Compliant Min Qty: 4800 Container: Tape & Reel (TR)	Temporarily Out of Stock	4800:$0.9281
IRF6662TRPBF DISTI # 27129240	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 8.3A 7-Pin Direct-FET MZ T/R RoHS: Compliant	9592	6000:$0.8129 3000:$0.8403 1000:$0.8474 500:$1.0038 250:$1.1283 100:$1.1412 25:$1.3992 10:$1.4047 8:$1.5914
IRF6662TRPBF DISTI # 30702685	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 8.3A 7-Pin Direct-FET MZ T/R RoHS: Compliant	4800	9600:$0.7972 4800:$0.7986
IRF6662TRPBF DISTI # IRF6662TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.3A 7-Pin Direct-FET MZ T/R (Alt: IRF6662TRPBF) RoHS: Compliant Min Qty: 4800 Container: Tape and Reel	Asia - 0
IRF6662TRPBF DISTI # IRF6662TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.3A 7-Pin Direct-FET MZ T/R - Tape and Reel (Alt: IRF6662TRPBF) RoHS: Compliant Min Qty: 4800 Container: Reel	Americas - 0	4800:$0.8319 9600:$0.8289 19200:$0.8259 28800:$0.8239 48000:$0.8209
IRF6662TRPBF DISTI # SP001576850	Infineon Technologies AG	Trans MOSFET N-CH 100V 8.3A 7-Pin Direct-FET MZ T/R (Alt: SP001576850) RoHS: Compliant Min Qty: 4800 Container: Tape and Reel	Europe - 0	4800:€1.0899 9600:€0.9089 19200:€0.8389 28800:€0.7789 48000:€0.7269
IRF6662TRPBF DISTI # 34AC1774	Infineon Technologies AG	MOSFET, N-CH, 100V, 47A, DIRECTFET MZ,Transistor Polarity:N Channel,Continuous Drain Current Id:47A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0175ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.9V,Power RoHS Compliant: Yes	3823	1:$1.9100 10:$1.6300 25:$1.5200 50:$1.4100 100:$1.3000 250:$1.2200 500:$1.1400 1000:$0.9410
IRF6662TRPBF DISTI # 942-IRF6662TRPBF	Infineon Technologies AG	MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ RoHS: Compliant	3185	1:$1.9100 10:$1.6300 100:$1.3000 500:$1.1400 1000:$0.9410 2500:$0.8770 4800:$0.8440
IRF6662TRPBF	International Rectifier	RoHS: Not Compliant	4600	1000:$0.8600 500:$0.9000 100:$0.9400 25:$0.9800 1:$1.0500
IRF6662TRPBF DISTI # IRF6662TRPBF	Infineon Technologies AG	N-Ch 100V 47A 89W 0,022R MZ RoHS: Compliant	0	10:€1.0200 50:€0.8600 200:€0.7800 500:€0.7540
IRF6662TRPBF DISTI # C1S322000482328	Infineon Technologies AG	MOSFETs	4800	4800:$1.0100
IRF6662TRPBF DISTI # C1S322000482319	Infineon Technologies AG	MOSFETs	9592	250:$1.1283 100:$1.1412 25:$1.3992 10:$1.4047
IRF6662TRPBF DISTI # 2781112	Infineon Technologies AG	MOSFET, N-CH, 100V, 47A, DIRECTFET MZ RoHS: Compliant	3851	1:£1.6600 10:£1.2800 100:£0.9980 250:£0.9350 500:£0.8710
IRF6662TRPBF DISTI # 2781112	Infineon Technologies AG	MOSFET, N-CH, 100V, 47A, DIRECTFET MZ RoHS: Compliant	3823	1:$3.2200 10:$2.8000 100:$2.2900 250:$1.9300 500:$1.6700 1000:$1.5800

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	Mfr.#: ABS07-32.768KHZ-T OMO.#: OMO-ABS07-32-768KHZ-T-ABRACON	Crystals 32.768KHz 12.5pf 3.2 x 1.5 x 0.9mm
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	Mfr.#: CSD18536KTT OMO.#: OMO-CSD18536KTT-TEXAS-INSTRUMENTS	MOSFET N-CH 60V 200A DDPAK
	Mfr.#: 5015 OMO.#: OMO-5015-KEYSTONE-ELECTRONICS	TEST POINT, PCB, SMT, FULL REEL, Product Range:-, Connector Colour:-, Connector Mounting:Surface Mount, Mounting Hole Dia:-, Contact Material:Phosphor Bronze, Contact Plating:Silver Plated Conta

IRF6662TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes