TGF2080

TGF2080
Mfr. #:
TGF2080
제조사:
Qorvo
설명:
RF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2080 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
TGF2080 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
TGF
포장
쟁반
부분 별칭
1098414
장착 스타일
SMD/SMT
작동 온도 범위
- 65 C to + 150 C
패키지 케이스
0.41 mm x 0.34 mm x 0.1 mm
기술
GaAs
구성
듀얼
트랜지스터형
pHEMT
얻다
11.5 dB
Pd 전력 손실
4.2 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 65 C
동작 주파수
12 GHz
Id-연속-드레인-전류
259 mA
Vds-드레인-소스-고장-전압
12 V
순방향 트랜스컨덕턴스-최소
309 mS
Vgs-Gate-Source-Breakdown-Voltage
- 7 V
최대 드레인 게이트 전압
- 12 V
P1dB-압축점
29.5 dBm
Tags
TGF20, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF2080 Discrete GaAs pHEMT
Qorvo TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. TGF2080 is designed using Qorvo’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection.Learn More
Triquint GaAs pHEMt Low Noise Amplifiers
TriQuint offers a wide variety of discrete transistor components using TriQuint's state-of-the-art ultra-low-noise 0.13µm pHEMT and 0.25µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NFmin as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.Learn More
부분 # 제조 설명 재고 가격
TGF2080
DISTI # 772-TGF2080
QorvoRF JFET Transistors DC-20GHz NF 1.1dB Gain 11.5dB PAE 56%
RoHS: Compliant
0
  • 100:$9.7400
  • 300:$9.1000
  • 500:$8.5100
  • 1000:$7.9500
영상 부분 # 설명
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Mfr.#: TGF2956

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OMO.#: OMO-TGF150D

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Mfr.#: TGF2021-02

OMO.#: OMO-TGF2021-02-318

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Mfr.#: TGF2023-2-20

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TGF120-EPU-SOT89

Mfr.#: TGF120-EPU-SOT89

OMO.#: OMO-TGF120-EPU-SOT89-1190

신규 및 오리지널
TGF202104SD

Mfr.#: TGF202104SD

OMO.#: OMO-TGF202104SD-1190

신규 및 오리지널
TGFGA1C105M8R

Mfr.#: TGFGA1C105M8R

OMO.#: OMO-TGFGA1C105M8R-1190

신규 및 오리지널
TGF40-07870787-039

Mfr.#: TGF40-07870787-039

OMO.#: OMO-TGF40-07870787-039-LEADER-TECH

THERMAL GAP FILLER, 200X200X1MM, PURPLE
유효성
재고:
Available
주문 시:
3500
수량 입력:
TGF2080의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$11.92
US$11.92
10
US$11.33
US$113.29
100
US$10.73
US$1 073.25
500
US$10.14
US$5 068.15
1000
US$9.54
US$9 540.00
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