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IPD60R520CP

IPD60R520CP
Mfr. #:
IPD60R520CP
제조사:
Rochester Electronics, LLC
설명:
IGBT Transistors MOSFET N-Ch 600V 6.8A DPAK-2 CoolMOS CP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD60R520CP 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언
제품 카테고리
FET - 단일
Tags
IPD60R520CP, IPD60R5, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 6.8A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 650V 6.8A TO-252
***ark
MOSFET, N, TO-252; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:6.8A; On State Resistance:0.52ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:650V; On Resistance Rds(on):520mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:66W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.8A; Package / Case:TO-252; Power Dissipation Pd:66W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-252; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:6.8A; Napięcie drenu / źródła Vds:650V; Rezystancja przewodzenia Rds(on):0.47ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:3V; Straty mocy Pd:66W; Rodzaj obudowy tranzystora:TO-252; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (27-Jun-2018); Maks. prąd Id:6.8A; Napięcie Vds, typ.:650V; Napięcie Vgs pomiaru Rds on:10V; Napięcie Vgs, maks.:20V; Rodzaj tranzystora:Mocy MOSFET; Temperatura robocza, min.:-55°C; Typ zakończenia:Do montażu powierzchniowego; Zakres temperatury roboczej:-55°C do +150°C
부분 # 제조 설명 재고 가격
IPD60R520CPBTMA1
DISTI # IPD60R520CPBTMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    IPD60R520CPBTMA1
    DISTI # IPD60R520CPBTMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPD60R520CPBTMA1
      DISTI # IPD60R520CPBTMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPD60R520CPATMA1
        DISTI # IPD60R520CPATMA1-ND        		Infineon Technologies AGMOSFET N-CH 600V 6.8A TO-252
        RoHS: Compliant
        Container: Tape & Reel (TR)        		Limited Supply - Call
          IPD60R520CPInfineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Compliant          		4840
          • 1000:$0.7500
          • 500:$0.7900
          • 100:$0.8200
          • 25:$0.8600
          • 1:$0.9200
          IPD60R520CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252
          RoHS: Compliant          		17500
          • 1000:$0.9000
          • 500:$0.9400
          • 100:$0.9800
          • 25:$1.0300
          • 1:$1.1000
          IPD60R520CPBTMA1Infineon Technologies AGPower Field-Effect Transistor, 6.8A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
          RoHS: Not Compliant          		7500
          • 1000:$0.7500
          • 500:$0.7900
          • 100:$0.8200
          • 25:$0.8600
          • 1:$0.9200
          영상 부분 # 설명
          IPD60R380C6ATMA1

          Mfr.#: IPD60R380C6ATMA1

          OMO.#: OMO-IPD60R380C6ATMA1

          		 MOSFET N-Ch 600V 10.6A DPAK-2
          IPD60R280P7SAUMA1

          Mfr.#: IPD60R280P7SAUMA1

          OMO.#: OMO-IPD60R280P7SAUMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 600V 12A TO252-3
          IPD60R600P7SAUMA1

          Mfr.#: IPD60R600P7SAUMA1

          OMO.#: OMO-IPD60R600P7SAUMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 600V 6A TO252-3
          IPD60R650CEAUMA1

          Mfr.#: IPD60R650CEAUMA1

          OMO.#: OMO-IPD60R650CEAUMA1-INFINEON-TECHNOLOGIES

          		 Trans MOSFET N-CH 600V 9.9A 3-Pin(2+Tab) DPAK T/R
          IPD60R460CEATMA1-CUT TAPE

          Mfr.#: IPD60R460CEATMA1-CUT TAPE

          OMO.#: OMO-IPD60R460CEATMA1-CUT-TAPE-1190

          		 신규 및 오리지널
          IPD60R2K0C6,6R2K0C6,

          Mfr.#: IPD60R2K0C6,6R2K0C6,

          OMO.#: OMO-IPD60R2K0C6-6R2K0C6--1190

          		 신규 및 오리지널
          IPD60R400CEATMA1 , 2SD23

          Mfr.#: IPD60R400CEATMA1 , 2SD23

          OMO.#: OMO-IPD60R400CEATMA1-2SD23-1190

          		 신규 및 오리지널
          IPD60R460CEATMA1 , 2SD23

          Mfr.#: IPD60R460CEATMA1 , 2SD23

          OMO.#: OMO-IPD60R460CEATMA1-2SD23-1190

          		 신규 및 오리지널
          IPD60R600P7ATMA1

          Mfr.#: IPD60R600P7ATMA1

          OMO.#: OMO-IPD60R600P7ATMA1-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 650V 6A TO252-3
          IPD60R380C6

          Mfr.#: IPD60R380C6

          OMO.#: OMO-IPD60R380C6-INFINEON-TECHNOLOGIES

          		 IGBT Transistors MOSFET N-Ch 600V 10.6A DPAK-2 CoolMOS C6
          유효성
          재고:
          Available
          주문 시:
          1500
          수량 입력:
          IPD60R520CP의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
          참고 가격(USD)
          수량
          단가
          내선 가격
          1
          US$1.12
          US$1.12
          10
          US$1.07
          US$10.69
          100
          US$1.01
          US$101.25
          500
          US$0.96
          US$478.15
          1000
          US$0.90
          US$900.00
          시작
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