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SI2306BDS-T1-GE3

SI2306BDS-T1-GE3
Mfr. #:
SI2306BDS-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI2306BDS-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2306BDS-T1-GE3 DatasheetSI2306BDS-T1-GE3 Datasheet (P4-P6)SI2306BDS-T1-GE3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SI2306BDS-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
SOT-23-3
상표명:
TrenchFET
포장:
릴
시리즈:
SI2
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SI2306BDS-GE3
단위 무게:
0.000282 oz
Tags
SI2306BDS-T1, SI2306BDS-T, SI2306B, SI2306, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
***ronik
N-CHANNEL-FET 4A 30V SOT23 RoHSconf
***ment14 APAC
N CHANNEL MOSFET, 30V, 4A, TO-236; Trans; N CHANNEL MOSFET, 30V, 4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
부분 # 제조 설명 재고 가격
SI2306BDS-T1-GE3
DISTI # V72:2272_09216787		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		2468
  • 1000:$0.2567
  • 500:$0.3246
  • 250:$0.3731
  • 100:$0.4146
  • 25:$0.5007
  • 10:$0.6120
  • 1:$0.7921
SI2306BDS-T1-GE3
DISTI # V36:1790_09216787		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		0
  • 3000:$0.2127
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3520In Stock
  • 1000:$0.2390
  • 500:$0.3093
  • 100:$0.3937
  • 10:$0.5270
  • 1:$0.6200
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3520In Stock
  • 1000:$0.2390
  • 500:$0.3093
  • 100:$0.3937
  • 10:$0.5270
  • 1:$0.6200
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 30V 3.16A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 30000:$0.1747
  • 15000:$0.1843
  • 6000:$0.1979
  • 3000:$0.2116
SI2306BDS-T1-GE3
DISTI # 32400643		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 3000:$0.1770
SI2306BDS-T1-GE3
DISTI # 33599494		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		3000
  • 327:$0.2354
SI2306BDS-T1-GE3
DISTI # 31084367		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
RoHS: Compliant		2468
  • 39:$0.7921
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 30000:€0.1729
  • 18000:€0.1859
  • 12000:€0.2009
  • 6000:€0.2339
  • 3000:€0.3429
SI2306BDS-T1-GE3
DISTI # SI2306BDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
    SI2306BDS-T1-GE3
    DISTI # SI2306BDS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2306BDS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.1659
    • 18000:$0.1709
    • 12000:$0.1759
    • 6000:$0.1829
    • 3000:$0.1889
    SI2306BDS-T1-GE3
    DISTI # 16P3706    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 16P3706)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack    		Americas - 0
    • 1000:$0.2220
    • 500:$0.2870
    • 250:$0.3180
    • 100:$0.3490
    • 50:$0.4100
    • 25:$0.4700
    • 1:$0.6200
    SI2306BDS-T1-GE3
    DISTI # 16P3706    		Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 4A, TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.065ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,No. of Pins:3PinsRoHS Compliant: Yes3000
    • 1:$0.1530
    • 25:$0.1530
    • 50:$0.1530
    • 100:$0.1530
    • 250:$0.1530
    • 500:$0.1530
    • 1000:$0.1530
    SI2306BDS-T1-GE3.
    DISTI # 30AC0137    		Vishay IntertechnologiesTransistor Polarity:N Channel,Continuous Drain Current Id:3.16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation Pd:750mW,No. of Pins:3Pins RoHS Compliant: No0
    • 30000:$0.1660
    • 18000:$0.1710
    • 12000:$0.1760
    • 6000:$0.1830
    • 1:$0.1890
    SI2306BDS-T1-GE3
    DISTI # 781-SI2306BDS-T1-GE3    		Vishay IntertechnologiesMOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
    RoHS: Compliant    		8400
    • 1:$0.6100
    • 10:$0.4690
    • 100:$0.3480
    • 500:$0.2860
    • 1000:$0.2210
    • 3000:$0.2010
    • 6000:$0.1880
    • 9000:$0.1750
    SI2306BDS-T1-GE3Vishay Intertechnologies 9000
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      유효성
      재고:
      Available
      주문 시:
      1991
      수량 입력:
      SI2306BDS-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.61
      US$0.61
      10
      US$0.47
      US$4.69
      100
      US$0.35
      US$34.80
      500
      US$0.29
      US$143.00
      1000
      US$0.22
      US$221.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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