IPD60R280P7SAUMA1

IPD60R280P7SAUMA1
Mfr. #:
IPD60R280P7SAUMA1
제조사:
Infineon Technologies
설명:
MOSFET CONSUMER
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD60R280P7SAUMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPD60R280P7SAUMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
12 A
Rds On - 드레인 소스 저항:
214 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
18 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
53 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
시리즈:
CoolMOS P7
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
9 ns
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
60 ns
일반적인 켜기 지연 시간:
17 ns
부품 번호 별칭:
IPD60R280P7S SP001658154
단위 무게:
0.011993 oz
Tags
IPD60R280P7S, IPD60R280P, IPD60R28, IPD60R2, IPD60R, IPD60, IPD6, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650V 280 mOhm 18 nC CoolMOS™ Power Mosfet - DPAK
***i-Key
MOSFET N-CH 600V 12A TO252-3
***ronik
N-CH 600V 12A 214mOhm TO252-3
***ical
P7 Power Transistor
***ark
Mosfet, N-Ch, 600V, 12A, 53W, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.214Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 12A, 53W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.214ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:53W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 12A, 53W, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:12A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.214ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:53W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
The 600V CoolMOS P7 is the successor to the 600V CoolMOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS 7th generation platform ensure its high efficiency. | Summary of Features: 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G | Benefits: Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency | Target Applications: TV power supply; Industrial SMPS; Server; Telecom; Lighting
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPD60R280P7SAUMA1
DISTI # V36:1790_18205320
Infineon Technologies AGP7 Power Transistor0
    IPD60R280P7SAUMA1
    DISTI # IPD60R280P7SAUMA1TR-ND
    Infineon Technologies AGMOSFET N-CH 600V 12A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    On Order
    • 5000:$0.5334
    • 2500:$0.5601
    IPD60R280P7SAUMA1
    DISTI # IPD60R280P7SAUMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 12A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$0.6181
    • 500:$0.7829
    • 100:$0.9477
    • 10:$1.2160
    • 1:$1.3600
    IPD60R280P7SAUMA1
    DISTI # IPD60R280P7SAUMA1DKR-ND
    Infineon Technologies AGMOSFET N-CH 600V 12A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$0.6181
    • 500:$0.7829
    • 100:$0.9477
    • 10:$1.2160
    • 1:$1.3600
    IPD60R280P7SAUMA1
    DISTI # IPD60R280P7SAUMA1
    Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPD60R280P7SAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 25000:$0.4839
    • 15000:$0.4919
    • 10000:$0.5099
    • 5000:$0.5289
    • 2500:$0.5479
    IPD60R280P7SAUMA1
    DISTI # 93AC7116
    Infineon Technologies AGMOSFET, N-CH, 600V, 12A, 53W, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.214ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes0
    • 1000:$0.5780
    • 500:$0.7310
    • 250:$0.7800
    • 100:$0.8280
    • 50:$0.9090
    • 25:$0.9900
    • 10:$1.0700
    • 1:$1.2600
    IPD60R280P7SAUMA1
    DISTI # 726-IPD60R280P7SAUMA
    Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant
    0
    • 1:$1.2500
    • 10:$1.0600
    • 100:$0.8200
    • 500:$0.7240
    • 1000:$0.5720
    IPD60R280P7SAUMA1
    DISTI # 2986468
    Infineon Technologies AGMOSFET, N-CH, 600V, 12A, 53W, TO-252
    RoHS: Compliant
    2500
    • 1000:$0.7630
    • 500:$0.8430
    • 250:$0.9180
    • 100:$0.9810
    • 25:$1.2000
    • 5:$1.3400
    IPD60R280P7SAUMA1
    DISTI # 2986468
    Infineon Technologies AGMOSFET, N-CH, 600V, 12A, 53W, TO-2522500
    • 100:£0.7980
    • 10:£1.1000
    • 1:£1.3900
    영상 부분 # 설명
    KBP210G

    Mfr.#: KBP210G

    OMO.#: OMO-KBP210G

    Bridge Rectifiers 1000V 2A
    MMSZ4709T1G

    Mfr.#: MMSZ4709T1G

    OMO.#: OMO-MMSZ4709T1G

    Zener Diodes 24V 500mW
    MSQ1PJHM3/H

    Mfr.#: MSQ1PJHM3/H

    OMO.#: OMO-MSQ1PJHM3-H

    Rectifiers 600V 1A MicroSMP(DO-219AD)
    ATMEGA328PB-AN

    Mfr.#: ATMEGA328PB-AN

    OMO.#: OMO-ATMEGA328PB-AN

    8-bit Microcontrollers - MCU ATMEGA328PB 20MHZ Extd. Temp
    UCC24612-2DBVR

    Mfr.#: UCC24612-2DBVR

    OMO.#: OMO-UCC24612-2DBVR

    Switching Controllers SYNC RECTIFIER FLYBACK
    AP7381-50Y-13

    Mfr.#: AP7381-50Y-13

    OMO.#: OMO-AP7381-50Y-13

    LDO Voltage Regulators 150mA ULDO REGULATOR
    IRSM505-065DA

    Mfr.#: IRSM505-065DA

    OMO.#: OMO-IRSM505-065DA-INFINEON-TECHNOLOGIES

    IC MOTOR DRIVER 500V 23DIP
    ATMEGA328PB-AN

    Mfr.#: ATMEGA328PB-AN

    OMO.#: OMO-ATMEGA328PB-AN-MICROCHIP-TECHNOLOGY

    Microcontrollers - MCU 8-bit Microcontrollers - MCU ATMEGA328PB 20MHZ Extd. Temp
    RL1206FR-070R91L

    Mfr.#: RL1206FR-070R91L

    OMO.#: OMO-RL1206FR-070R91L-YAGEO

    Current Sense Resistors - SMD 0.91 Ohm 1% 1/2 W
    54602-908LF

    Mfr.#: 54602-908LF

    OMO.#: OMO-54602-908LF-AMPHENOL-ICC

    Modular Connectors / Ethernet Connectors 8-8 HORIZ PCB JACK
    유효성
    재고:
    Available
    주문 시:
    1985
    수량 입력:
    IPD60R280P7SAUMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$1.25
    US$1.25
    10
    US$1.06
    US$10.60
    100
    US$0.82
    US$82.00
    500
    US$0.72
    US$362.00
    1000
    US$0.57
    US$572.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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