IPD60R280P

IPD60R280P7ATMA1 vs IPD60R280P7SAUMA1 vs IPD60R280P7SE8228AUMA1

 
PartNumberIPD60R280P7ATMA1IPD60R280P7SAUMA1IPD60R280P7SE8228AUMA1
DescriptionMOSFET LOW POWER_NEWMOSFET CONSUMERTransistor MOSFET N-CH 650V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R280P7SE8228AUMA1)
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance214 mOhms214 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge18 nC18 nC-
Minimum Operating Temperature- 55 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation53 W53 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameCoolMOSCoolMOS-
PackagingReelReel-
SeriesCoolMOS P7CoolMOS P7-
Transistor Type1 N-Channel1 N-Channel-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time9 ns9 ns-
Product TypeMOSFETMOSFET-
Rise Time9 ns9 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time60 ns60 ns-
Typical Turn On Delay Time17 ns17 ns-
Part # AliasesIPD60R280P7 SP001658316IPD60R280P7S SP001658154-
Unit Weight0.011993 oz0.011993 oz-
제조사 부분 # 설명 RFQ
Infineon Technologies
Infineon Technologies
IPD60R280P7ATMA1 MOSFET LOW POWER_NEW
IPD60R280P7SAUMA1 MOSFET CONSUMER
IPD60R280P7ATMA1 MOSFET N-CH 600V 12A TO252-3
IPD60R280P7SAUMA1 MOSFET N-CH 600V 12A TO252-3
IPD60R280P7SE8228AUMA1 Transistor MOSFET N-CH 650V 12A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R280P7SE8228AUMA1)
IPD60R280P7ATMA1-CUT TAPE 신규 및 오리지널
IPD60R280P7SAUMA1-CUT TAPE 신규 및 오리지널
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